A method for manufacturing an image display device includes: providing a second substrate that includes a first substrate, and a semiconductor layer grown on the first substrate, the semiconductor layer including a light-emitting layer; providing a third substrate including: a circuit including a circuit element formed on a light-transmitting substrate, a first insulating film covering the circuit, and a conductive layer including a light-reflective part formed on the first insulating film; bonding the semiconductor layer to the third substrate; forming a light-emitting element from the semiconductor layer; forming a second insulating film covering the conductive layer, the light-emitting element, and the first insulating film; forming a via extending through the first and second insulating films; and electrically connecting the light-emitting element and the circuit element by the via.

A light emitting device includes: a resin package including: a resin part, and a plurality of leads including a first lead and a second lead, wherein the resin package has a concave portion having a bottom face at which a part of an upper surface of the first lead and a part of an upper surface of the second lead are exposed from the resin part; a light emitting element mounted on the bottom face of the concave portion; and a sealing member covering the light emitting element in the concave portion. The plurality of leads comprise a plurality of notch parts including a first notch part on a first side corresponding to a first outer side surface of the resin package and a second notch part on a second side corresponding to a second outer side surface of the resin package.

A light emitting device includes a backplane, an array of light emitting diodes attached to a frontside of the backplane, a positive tone, imageable dielectric material layer, such as a positive photoresist layer, located on the frontside of the backplane and laterally surrounding the array of light emitting diodes, such that sidewalls of the light emitting diodes contacting the positive tone, imageable dielectric material layer have a respective reentrant vertical cross-sectional profile, and at least one common conductive layer located over the positive tone, imageable dielectric material layer and contacting the light emitting diodes.

In a micro-device integration process, a donor substrate is provided on which to conduct the initial manufacturing and pixelation steps to define the micro devices, including functional, e.g. light emitting layers, sandwiched between top and bottom conductive layers. The microdevices are then transferred to a system substrate for finalizing and electronic control integration. The transfer may be facilitated by various means, including providing a continuous light emitting functional layer, breakable anchors on the donor substrates, temporary intermediate substrates enabling a thermal transfer technique, or temporary intermediate substrates with a breakable substrate bonding layer.

A light-emitting display device includes at least a transparent substrate, a first patterned conductive layer and a second patterned conductive layer respectively disposed on top of the opposite first and second surfaces of the transparent substrate, and a plurality of inorganic electroluminescent objects disposed in form of an array on top of the first surface of the transparent substrate with the inorganic electroluminescent objects being spaced from one another in a distance of at least 2 mm. Each of the inorganic electroluminescent objects has one power pin and light signal pins for red light, green light, and blue light. The transparent substrate has a plurality of through holes between the first surface and the second surface. The first patterned conductive layer has a plurality of soldering pad regions respectively in connection with the power pin and the light signal pins. At least one of the soldering regions is in electrical connection with the second patterned conductive layer by means of one of the through holes.

A display device includes a substrate, on which a display area and a non-display area are defined, pixels disposed on the substrate, where the pixels include pixel electrodes disposed in emission areas positioned in the display area, light emitting layers disposed on the pixel electrodes, and a common electrode disposed on the light emitting layers, an insulating layer disposed on the substrate and positioned in a non-emission area between the emission areas of the pixels and the non-display area, and a conductive pattern disposed on the insulating layer to be separated from the pixel electrodes of the pixels, where a first voltage is applied to the conductive pattern. The insulating layer includes a lower insulating layer positioned between the pixel electrodes in the display area, and an upper insulating layer disposed on the lower insulating layer and having a greater area than an upper surface of the lower insulating layer.

A display device including an internal area and a peripheral area surrounding at least a portion of the internal area includes a pixel-circuit layer disposed on a base layer and including lower lines, at least a portion of which form a pixel circuit, and sub-pixels disposed on the pixel-circuit layer and including a light emitting element electrically connected to the pixel circuit. The internal area includes a pixel area on which the sub-pixels are disposed, and an outer-dam area formed at a periphery of the pixel area. In the outer-dam area, at least another portion of the lower lines are stacked in a thickness direction of the base layer to form a protruding structure.

A method for manufacturing a light-emitting device includes preparing a stacked body including a substrate and a semiconductor layer on the substrate; and separating the substrate from the semiconductor layer by irradiating the stacked body with a laser light. A first region of the stacked body corresponding to an outer perimeter region of the semiconductor layer and a second region of the stacked body corresponding to a center region of the semiconductor layer are simultaneously irradiated with the laser light during the separating. An irradiation intensity of the laser light at the second region of the stacked body is greater than an irradiation intensity of the laser light at the first region of the stacked body.

Direct-bonded LED arrays and applications are provided. An example process fabricates a LED structure that includes coplanar electrical contacts for p-type and n-type semiconductors of the LED structure on a flat bonding interface surface of the LED structure. The coplanar electrical contacts of the flat bonding interface surface are direct-bonded to electrical contacts of a driver circuit for the LED structure. In a wafer-level process, micro-LED structures are fabricated on a first wafer, including coplanar electrical contacts for p-type and n-type semiconductors of the LED structures on the flat bonding interface surfaces of the wafer. At least the coplanar electrical contacts of the flat bonding interface are direct-bonded to electrical contacts of CMOS driver circuits on a second wafer. The process provides a transparent and flexible micro-LED array display, with each micro-LED structure having an illumination area approximately the size of a pixel or a smallest controllable element of an image represented on a high-resolution video display.

A light emitting device, includes: a substrate; a light emitting element on the substrate, the light emitting element having a first end portion and a second end portion arranged in a longitudinal direction; one or more partition walls disposed on the substrate, the one or more partition walls being spaced apart from the light emitting element; a first reflection electrode adjacent the first end portion of the light emitting element; a second reflection electrode adjacent the second end portion of the light emitting element; a first contact electrode connected to the first reflection electrode and the first end portion of the light emitting element; an insulating layer on the first contact electrode, the insulating layer having an opening exposing the second end portion of the light emitting element and the second reflection electrode to the outside; and a second contact electrode on the insulating layer.