A detection device includes a substrate, a photodiode provided on the substrate, a lens provided so as to overlap the photodiode, a light-blocking layer that is provided between the photodiode and the lens, and is provided with an opening in a region overlapping the photodiode, and a light-transmitting resin layer and a buffer layer that are stacked between the light-blocking layer and the lens. The lens is provided in direct contact with a top of the buffer layer.

The present disclosure relates to a solid-state image pickup device and an electronic apparatus by which a phase-difference detection pixel that avoids defects such as lowering of sensitivity to incident light and lowering of phase-difference detection accuracy can be realized. A solid-state image pickup device as a first aspect of the present disclosure is a solid-state image pickup device in which a normal pixel that generates a pixel signal of an image and a phase-difference detection pixel that generates a pixel signal used in calculation of a phase-difference signal for controlling an image-surface phase difference AF function are arranged in a mixed manner, in which, in the phase-difference detection pixel, a shared on-chip lens for condensing incident light to a photoelectric converter that generates a pixel signal used in calculation of the phase-difference signal is formed for every plurality of adjacent phase-difference detection pixels. The present disclosure is applicable to a backside illumination CMOS image sensor and an electronic apparatus equipped with the same.

To improve reliability of a solid-state imaging apparatus. A solid-state imaging apparatus includes: a chip; and a transparent member. A solid-state image sensor is formed in the chip. The transparent member is directly joined to the chip via a projecting portion. The projecting portion of the transparent member is formed so as to maintain a gap between the transparent member and an imaging region of the solid-state image sensor of the chip. A protective film may be formed on a semiconductor substrate via an anti-reflection film. A color filter or an on-chip lens may be formed for each pixel in the imaging region of the solid-state image sensor of the chip.

Embodiments of this application disclose a camera module and an electronic device. The camera module includes a color filter layer. The color filter layer includes an electrochromic region and a plurality of color filter regions. Each color filter region is used for transmitting a spectrum of a band corresponding to the color filter region. The electrochromic region has a fully light-transmissive state and a filter state. In the fully light-transmissive state, the electrochromic region is used for transmitting spectra of a plurality of different bands. In the filter state, the electrochromic region is used for transmitting spectra of a same band.

A solid-state imaging element including a lens array in which micro lenses are formed in an alignment, a flattening layer formed on the lens array, and a diffraction grating part including a thermosetting resin, has diffraction gratings, and is provided on the flattening layer. A solid-state imaging element including a lens array in which micro lenses are in an alignment, a flattening layer formed on the lens array, and a diffraction grating part including a base that covers the entire upper surface of the flattening layer, and diffraction gratings provided so as to protrude from the base.

An image capture device includes a plurality of independently formed camera channels. Each of the plurality of independently formed camera channels includes a respective sensor, wherein the respective sensor includes circuitry that controls an integration time of the respective sensor, and a respective lens that receives incident light and transmits the incident light to the respective sensor without transmitting the incident light to respective sensor of other camera channels within the plurality of independently formed camera channels. Further, a processor that is communicatively coupled to the respective sensor of each of the plurality of independently formed camera channels. The processor is configured to receive respective images from the respective sensor of each of the plurality of independently formed camera channels, and form a combined image by combing each of the respective images.

An image sensing device may include one or more pixel groups arranged in rows and columns in an array, each pixel group being arranged at an intersection between a row and a column of the array, wherein each pixel group comprises one or more floating diffusion regions, and one or more groups of an odd number photoelectric conversion units structured to convert incident light to generate electrical charge, each group of the odd number of photoelectric conversion units electrically connected in common to one of the floating diffusion regions for receiving the generated electrical charge.

An image sensor includes a substrate including a first surface on which light is incident and a second surface opposite to the first surface, unit pixels in the substrate, each including a photoelectric conversion layer, color filters on the first surface of the substrate, a grid pattern on the first surface of the substrate defining a respective light receiving area of each of the unit pixels, and microlenses on the color filters, each of the microlenses corresponding to a respective one of the unit pixels, wherein the unit pixels include a first pixel and a second pixel sharing a first color filter which is one of the color filters, and a first light receiving area of the first pixel is different from a second light receiving area of the second pixel.

The present disclosure relates to a solid-state imaging device, a method for driving the solid-state imaging device, and an electronic device capable of improving auto-focusing accuracy by using a phase difference signal obtained by using a photoelectric conversion film. The solid-state imaging device includes a pixel including a photoelectric conversion portion having a structure where a photoelectric conversion film is interposed by an upper electrode on the photoelectric conversion film and a lower electrode under the photoelectric conversion film. The upper electrode is divided into a first upper electrode and a second upper electrode. The present disclosure can be applied to, for example, a solid-state imaging device or the like.

An imaging device may include single-photon avalanche diodes (SPADs). To improve the sensitivity and signal-to-noise ratio of the SPADs, light scattering structures may be formed in the semiconductor substrate to increase the path length of incident light through the semiconductor substrate. To mitigate crosstalk, multiple rings of isolation structures may be formed around the SPAD. An outer deep trench isolation structure may include a metal filler such as tungsten and may be configured to absorb light. The outer deep trench isolation structure therefore prevents crosstalk between adjacent SPADs. Additionally, one or more inner deep trench isolation structures may be included. The inner deep trench isolation structures may include a low-index filler to reflect light and keep incident light in the active area of the SPAD.