A processing apparatus includes a first storage unit for storing first array data that is based on output values of a plurality of pixels arranged in an array, a second storage unit having second array data stored therein to be used for correction of the output values from the plurality of pixels, and a correction unit including a calculation unit that corrects an output value of at least one pixel of the plurality of pixels based on the first array data and the second array data.

An optical sensing device is provided. The optical sensing device includes an optical sensing element and a detection circuit. The optical sensing element senses an incident photon and generates a sensing signal. The detection circuit detects a pulse width of the sensing signal, and generates a reset signal when the pulse width is larger than a threshold value. Thereby, the optical sensing device is reset according to the reset signal and a dynamic range of the optical sensing device under strong ambient light will be further improved.

Structures including a single-photon avalanche diode and methods of forming such structures. The structure comprises a semiconductor substrate including a trench. The trench surrounds a portion of the semiconductor substrate. The structure further comprises a deep trench isolation region that includes a dielectric layer and a semiconductor layer inside the trench. The dielectric layer is disposed between a sidewall of the trench and the semiconductor layer. The structure further comprises an active device that includes a doped region in the semiconductor layer.

According to an aspect of the present disclosure, an avalanche diode, a detection unit configured to detect an avalanche current generated by avalanche multiplication in the avalanche diode, a switch disposed between the avalanche diode and the detection unit, and a reset unit configured to reset a node between the switch and the detection unit. The reset unit resets the node during a period in which the switch is in an off state.

An apparatus wherein, in plane view, a first semiconductor region of a first conductivity type overlaps at least a portion of a third semiconductor region, a second semiconductor region overlaps at least a portion of a fourth semiconductor region of a second conductivity type, a height of a potential of the third semiconductor region with respect to an electric charge of the first conductivity type is lower than that of the fourth semiconductor region, and a difference between a height of a potential of the first semiconductor region and that of the third semiconductor region is larger than a difference between a height of a potential of the second semiconductor region and that of the fourth semiconductor region.

An optoelectronic device includes a first semiconductor die, having first and second surfaces and including a first array of transceiver elements. Each transceiver element includes an optical transducer, which directs outgoing coherent optical radiation through the first surface toward a target and to receive incoming optical radiation that has been reflected from the target. A single-photon optical detector outputs electrical pulses in response to photons of the incoming optical radiation. A waveguide conveys the incoming optical radiation from the optical transducer to the single-photon optical detector. A second semiconductor die is bonded to the second surface of the first semiconductor die and includes a second array of logic circuits, which are coupled to receive and process the electrical pulses output by the single-photon optical detectors in corresponding ones of the transceiver elements.

The present disclosure relates to a semiconductor photomultiplier comprising a substrate; an array of photosensitive cells formed on the substrate that are operably coupled between an anode and a cathode. A set of primary bus lines are provided each being associated with a corresponding set of photosensitive cells. A secondary bus line is coupled to the set of primary bus lines. An electrical conductor is provided having a plurality of connection sites coupled to respective connection locations on the secondary bus line for providing conduction paths which have lower impedance than the secondary bus line.

A photodetection circuit includes an avalanche photodiode and a mode switching circuit that may be configured to selectively switch an operating mode of the photodetection circuit between linear mode and Geiger mode. The photodetection circuit may further include a quenching circuit configured to quench and reset the avalanche photodiode in response to an avalanche event when the photodetection circuit is operated in Geiger mode. The photodetection circuit may additionally include an integration circuit configured to integrate photocurrent output by the photodiode and generate integrated charge units when the photodetection circuit is operated in linear mode. The photodetection circuit may also include a counter configured to count pulses output by the avalanche photodiode when the photodetection circuit is operated in Geiger mode and to count integrated charge units generated by the integration circuit when the photodetection circuit is operated in linear mode.

A readout circuit for reading out an output current from a photoelectric conversion element which collectively outputs currents generated in a plurality of pixels, each of which includes an avalanche photodiode, includes a current mirror circuit configured to receive the output current and output first and second currents having magnitudes in proportion to the output current, a photon counting circuit configured to count the number of photons incident on the photoelectric conversion element on the basis of the first current, an integral circuit configured to integrate the second current to generate a voltage signal, and a signal processing unit configured to determine a magnitude of light incident on the photoelectric conversion element on the basis of a counting result output from the photon counting circuit and a magnitude of the voltage signal output from the integral circuit.

A method of detecting an optical signal, comprising the steps of: providing an avalanche photodiode (APD) comprising a multiplication region capable of amplifying an electric current, said multiplication region, in operation, having a first ionization rate for electrons and a second ionization rate for holes, wherein said first ionization rate is different in magnitude from said second ionization rate, and exposure to the optical signal causes an impulse response; exposing the APD to a modulating optical signal; providing an external circuit that induces an APD bias to the multiplication region; providing an external circuit for amplifying and processing an electric signal from the avalanche photodiode; and modulating the APD bias in a manner that is correlated with the optical signal.