A pixel structure of a liquid crystal display panel includes a substrate, a switch device, a pixel electrode, an insulating layer, and a patterned common electrode. The switch device and the pixel electrode are disposed on the substrate, and the switch device is electrically connected to the pixel electrode. The insulating layer is disposed on the substrate and covers the switch device and the pixel electrode, wherein the insulating layer includes a plurality of trenches. The patterned common electrode is disposed on the insulating layer and does not cover the trenches. The pixel structure of the liquid crystal display panel and related manufacturing method are able to enhance the driving effect of the liquid crystal molecules, reduce the driving voltage and increase alignment performance of the alignment film.

In a semiconductor device, a first interlayer insulating layer made of an inorganic material and formed on inverse stagger type TFTs, a second interlayer insulating layer made of an organic material and formed on the first interlayer insulating layer, and a pixel electrode formed in contact with the second interlayer insulating layer are disposed on a substrate, and an input terminal portion that is electrically connected to a wiring of another substrate is provided on an end portion of the substrate. The input terminal portion includes a first layer made of the same material as that of the gate electrode and a second layer made of the same material as that of the pixel electrode. With this structure, the number of photomasks used in the photolithography method can be reduced to 5.

Embodiments of the invention provide a display panel and a manufacturing method thereof, and a display device comprising such a display panel. At least one sensor is integrated into the display panel through a semiconductor process that is at least partially synchronously performed with processes of forming the array substrate and/or color filter substrate of the display panel, such that an integration level of the sensor on the display panel is increased and the process is simplified.

A semiconductor device comprises a multi-layered structure disposed over a substrate and defining a composite lateral etch profile. The multi-layered structure includes a lower sub-layer disposed over the substrate and comprising a metal oxide material that includes indium and zinc, the indium and zinc content in the bottom sub-layer substantially defining a first indium to zinc content ratio; a middle sub-layer disposed over the bottom sub-layer and comprising a metal material; an upper sub-layer disposed over the middle sub-layer and comprising a metal oxide material that includes indium and zinc, the indium to zinc content in the upper sub-layer substantially defining a second indium to zinc content ratio smaller than the first indium to zinc content ratio; and a lateral byproduct layer formed over the lateral etched surface, comprising substantially an metal oxide of the metal material in the middle sub-layer.

It is an object to manufacture a highly reliable display device using a thin film transistor having favorable electric characteristics and high reliability as a switching element. In a bottom gate thin film transistor including an amorphous oxide semiconductor, an oxide conductive layer having a crystal region is formed between an oxide semiconductor layer which has been dehydrated or dehydrogenated by heat treatment and each of a source electrode layer and a drain electrode layer which are formed using a metal material. Accordingly, contact resistance between the oxide semiconductor layer and each of the source electrode layer and the drain electrode layer can be reduced; thus, a thin film transistor having favorable electric characteristics and a highly reliable display device using the thin film transistor can be provided.

This disclosure describes different ways to improve the operation of a device's 1149.1 TAP to where the TAP can perform at-speed Update & Capture, Shift & Capture and Back to Back Capture & Shift operations. In a first embodiment of the disclosure the at-speed operations are achieved by time division multiplexing CMD signals onto the TMS input to the TAP. The CMD signals are input to a CMD circuit that operates in conjunction with a Dual Port Router to execute the at-speed operations of a circuit. In a second embodiment of the disclosure the at-speed operations are achieved by detecting the TAP's Exit1DR state as a CMD signal that is input to the CMD circuit that operates in conjunction with a Dual Port Router to execute the at-speed operations of a circuit. In a third embodiment of the disclosure the at-speed operations are achieved by detecting the TAP's Exit1DR and PauseDR states and in response producing Capture and Update signals that are input to a Programmable Switch that operates in conjunction with a Dual Port Router to execute the at-speed operations of a circuit. In a fourth embodiment of the disclosure the at-speed operations are achieved by detecting the TAP's Exit1DR and PauseDR states and inputting these states to a Dual Port Router to control the at-speed operations of a circuit. Each of the embodiments may be augmented to include externally accessible Update and Capture input signals that can be selected to allow a tester to directly control the at-speed operations of a circuit. The improvements of the disclosure are achieved without requiring any additional IC pins beyond the 4 required TAP pins, except for examples showing use of additional data input pins (TDI or WPI signals), additional data output pins (TDO or WPO signals) or examples showing use of additional control input pins (Capture and Update signals). Devices including the TAP improvements can be operated compliantly in a daisy-chain arrangement with devices that don't include the TAP improvements.

A vertical transistor has a first air-gap spacer between a gate and a bottom source/drain region, and a second air-gap spacer between the gate and the contact to the bottom source/drain region. A dielectric layer disposed between the gate and the contact to the top source/drain decreases parasitic capacitance and inhibits electrical shorting.

The present invention provides an array substrate structure and a manufacturing method thereof, in which after a common electrode (91) is formed, a reduction resistant layer (82) is first formed on the common electrode (91) before deposition of a second insulation layer (83) in order to prevent the film quality of the common electrode (91) from being affected by a reductive atmosphere generated in a process of directly depositing the second insulation layer (83) on the common electrode (91) thereby reducing the influence on the transmittal of the common electrode (91) caused by the deposition of the second insulation layer (83) on the common electrode (91) and providing the common electrode (91) with increased transmittal and enhancing displaying performance.

A method of manufacturing an image sensor device includes providing a metalized thin film transistor layer on a glass substrate; forming an inter-layer dielectric layer on the metalized thin film transistor layer; forming a via through the inter-layer dielectric layer; forming a metal layer the inter-layer dielectric and within the inter-layer dielectric layer via for contacting the metalized thin film transistor layer; forming a bank layer on the metal layer and the inter-layer dielectric layer; forming a via through the bank layer; forming an electron transport layer on the bank layer and within the bank layer via for contacting an upper surface of the metal layer; forming a bulk heterojunction layer on the electron transport layer; forming a hole transport layer on the bulk heterojunction layer; and forming a top contact layer on the hole transport layer.

A change in electrical characteristics of a semiconductor device including an interlayer insulating film over a transistor including an oxide semiconductor as a semiconductor film is suppressed. The structure includes a first insulating film which includes a void portion in a step region formed by a source electrode and a drain electrode over the semiconductor film and contains silicon oxide as a component, and a second insulating film containing silicon nitride, which is provided in contact with the first insulating film to cover the void portion in the first insulating film. The structure can prevent the void portion generated in the first insulating film from expanding outward.