A solid-state imaging device includes: a substrate including a first surface and a second surface that is opposed to the first surface; a first through-wiring that penetrates from the first surface of the substrate to the second surface of the substrate and through which electric charge is to be transferred; an electroconductive body formed in the substrate and along a periphery of a side surface of the first through-wiring with a dielectric body being interposed between the electroconductive body and the side surface; and a voltage supply circuit that supplies the electroconductive body with a voltage that causes a voltage difference between the first through-wiring and the electroconductive body to be small, when the electric charge is to be transferred to the first through-wiring.

Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an acitve region may also be used for the registration mark. Thereafter, the registration mark is read from the back-side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back-side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.

While a drain power source of a reset transistor and a drain power source of an amplifying transistor are separated, the load of drain power source can be reduced by sharing a drain diffusion layer of the reset transistor and a drain diffusion layer of the amplifying transistor by adjacent cells in sharing pixel units. Further, an efficient pixel layout is provided by reducing the number of routing wires.

A radiation image-pickup device includes: a plurality of pixels configured to generate signal charge based on radiation; and a field effect transistor used to read out the signal charge from the plurality of pixels. The transistor includes a first silicon oxide film, a semiconductor layer, and a second silicon oxide film laminated in order from a substrate side, the semiconductor layer including an active layer, and a first gate electrode disposed to face the semiconductor layer, with the first or the second silicon oxide film interposed therebetween, and the first or the second silicon oxide film or both include an impurity element.

An image sensor having different bias voltages is provided. The image sensor may include a plurality of pixels configured to output pixel signals based on a received optical signal, and logic circuits configured to output the pixels signals as image data. The pixels may be formed on a first region of a semiconductor substrate, the first region being substrate biased to a first voltage. The logic circuits may be formed on a second region of the semiconductor substrate different from the first region, the second region being substrate biased to a second voltage different from the first voltage. A full-well capacitance (FWC) of the photodiode may be increased by applying the first voltage, which is a negative () voltage, to a photodiode of a pixel to reduce (or, alternatively prevent) a blooming effect.

A solid-state imaging device includes a pixel including a photoelectric conversion element, a floating diffusion layer, a transfer transistor, a reset transistor, and an amplifier transistor, and a control unit configured to supply a first voltage to a gate of the reset transistor when the charges are accumulated in the photoelectric conversion element, the first voltage being set between a second voltage and a third voltage; subsequently supply the second voltage to the gate of the reset transistor when the reset transistor is turned on in order to reset the potential of the floating diffusion layer, and subsequently supply the third voltage to the gate of the reset transistor when the amplifier transistor outputs the signal based on the potential of the floating diffusion layer.

Provided is an imaging device operated at high speed and low power consumption. The imaging device includes a pixel and a first circuit. The pixel includes a first photoelectric conversion element and a second photoelectric conversion element. The first circuit is configured to compare a first signal which is output from the pixel on the basis of imaging data obtained by the first photosensitive conversion element to a second signal which is output from the pixel on the basis of imaging data obtained by the second photosensitive conversion element for determining whether there is a difference between the first signal and the second signal. Thus, edge detection can be performed without a periphery device for edge detection outside the imaging device.

A complementary metal-oxide-semiconductor depth sensor element comprises a photogate formed in a photosensitive area on a substrate. A first transfer gate and a second transfer gate are formed respectively on two sides of the photogate in intervals. A first floating doped area and a second floating doped area are formed respectively on the outer sides of the first transfer gate and the second transfer gate. The first and second floating doped regions have dopants of a first polarity and the semiconductor area has dopants of a second polarity opposite to the first polarity. Since the photogate and at least parts of the first and second transfer gates connect to the same semiconductor area and no other dopants of polarity opposite to the second polarity. Therefore, the majority carriers from the photogate excited by lights drift, but not diffuse, to transfer to the first and second transfer gates.

The present disclosure relates to a solid-state imaging device, an electronic apparatus, and a manufacturing method that are designed to further increase conversion efficiency.

A solid-state imaging device includes a pixel in which element separation is realized by a first trench element separation region having a trench structure in a region between an FD unit and an amplifying transistor among element separation elements separating the elements constituting the pixel from one another, and a second trench element separation region having a trench structure in a region other than the region between the FD unit and the amplifying transistor among the element separation regions separating the elements constituting the pixel from one another, and the first trench element separation region is deeper than the second trench element separation region. The present technology can be applied to CMOS image sensors, for example.

A semiconductor device includes a first semiconductor layer; an insulation member layer formed on the first semiconductor layer; a transistor disposed in an upper portion of the insulation member layer; a first interlayer insulation film covering the transistor; a layered member including a wiring layer formed on the first interlayer insulation film and a second interlayer insulation film; and a first penetrating electrode penetrating through the insulation member layer, the first interlayer insulation film, and the layered member. The first penetrating electrode is electrically connected only to the first semiconductor layer.