A solid-state imaging device includes a plurality of pixels each of which includes a photoelectric conversion unit that generates charges by photoelectrically converting light, and a transistor that reads a pixel signal of a level corresponding to the charges generated in the photoelectric conversion unit. A phase difference pixel which is at least a part of the plurality of pixels is configured in such a manner that the photoelectric conversion unit is divided into a plurality of photoelectric conversion units and an insulated light shielding film is embedded in a region for separating the plurality of photoelectric conversion units, which are divided, from each other.

A sensor includes a plurality of image sensors, wherein each image sensor of the plurality of image sensors is configured to detect a first spectrum of light. The sensor further includes a depth sensing pixel bonded to each image sensor of the plurality of image sensors, wherein the depth sensing pixel is configured to detect a second spectrum of light different from the first spectrum.

An improvement is achieved in the performance of a semiconductor device. A semiconductor device includes an n.sup.-type semiconductor region formed in a p-type well, an n-type semiconductor region formed closer to a main surface of a semiconductor substrate than the n.sup.-type semiconductor region, and a p.sup.-type semiconductor region formed between the n.sup.-type semiconductor region and the n-type semiconductor region. A net impurity concentration in the n.sup.-type semiconductor region is lower than a net impurity concentration in the n-type semiconductor region. A net impurity concentration in the p.sup.-type semiconductor region is lower than a net impurity concentration in the p-type well.

A solid-state imaging device includes a layout in which one sharing unit includes an array of photodiodes of 2 pixels by 4n pixels (where, n is a positive integer), respectively, in horizontal and vertical directions.

An image sensor includes a semiconductor substrate having first and second faces. The sensor includes a plurality of pixel groups each including pixels, each pixel having a photoelectric converter and a wiring pattern, the converter including a region whose major carriers are the same with charges to be accumulated in the photoelectric converter. The sensor also includes a microlenses which are located so that one microlens is arranged for each pixel group. The wiring patterns are located at a side of the first face, and the plurality of microlenses are located at a side of the second face. Light-incidence faces of the regions of the photoelectric converters of each pixel group are arranged along the second face such that the light-incidence faces are apart from each other in a direction along the second face.

A solid-state image pickup unit includes: a substrate made of a first semiconductor; a substrate made of a first semiconductor; a photoelectric conversion device provided on the substrate and including a first electrode, a photoelectric conversion layer, and a second electrode in order from the substrate; and a plurality of field-effect transistors configured to perform signal reading from the photoelectric conversion device. The plurality of transistors include a transfer transistor and an amplification transistor, the transfer transistor includes an active layer containing a second semiconductor with a larger band gap than that of the first semiconductor, and one terminal of a source and a drain of the transfer transistor also serves the first electrode or the second electrode of the photoelectric conversion device, and the other terminal of the transfer transistor is connected to a gate of the amplification transistor.

A solid-state image pickup device is provided which can inhibit degradation of image quality which may occur when a global electronic shutter operation is performed. A gate drive line for a first transistor of gate drive lines for pixel transistors is positioned in proximity to a converting unit.

A back-side illuminated pixel including a semiconductor substrate of a first conductivity type coated, on the front side of the pixel, with a three-layer assembly successively including a first layer of the second conductivity type, an insulating layer, and a second semiconductor layer. The three-layer assembly is interrupted in a central portion of the pixel by a transfer region of the first conductivity type laterally delimited by an insulated conductive wall extending from the front surface, Transistors are formed in the second semiconductor layer.

An image reading apparatus includes an image reading chip configured to read an image. The image reading chip includes a first pixel unit which generates a first pixel signal, a second pixel unit which generates a second pixel signal, a first amplification unit which amplifies the first pixel signal, and outputs a first amplification signal, a second amplification unit which amplifies the second pixel signal, and outputs a second amplification signal, and a third amplification unit that amplifies each of the first amplification signal and the second amplification signal, and outputs an amplified signal. The image reading chip has a shape which includes a first side and a second side shorter than the first side. The third amplification unit is disposed between the first amplification unit and the second amplification unit in a direction along the first side.

A method for fabricating an image sensor in accordance with an embodiment of the inventive concepts may include forming first and second photodiodes within a substrate, forming first and second gate electrodes over the substrate, the first gate electrode vertically partially overlapping the first photodiode and the second gate electrode vertically partially overlapping the second photodiode, forming an impurity injection region comprising first and second type impurities between the first and the second gate electrodes, and performing an annealing process to form a floating diffusion region comprising the first type impurities and a channel region comprising the second type impurities. The channel region surrounds lateral surfaces and a bottom surface of the floating diffusion region.