An image sensor in which a shading phenomenon is decreased and the quality is increased includes a substrate comprising a first face on which light is incident, and a second face opposite to the first face and a plurality of unit pixels. Each of the plurality of unit pixels includes a photoelectric conversion layer in the substrate. The image sensor further includes a pixel separation pattern which separates unit pixels from the plurality of the unit pixels from each other, a plurality of color filters disposed on the first face of the substrate and arranged in a Bayer pattern, and a grid pattern disposed on the first face of the substrate and interposed within the plurality of color filters. A light-receiving area of the red color filter and a light-receiving area of the blue color filter are smaller than a light-receiving area of the green color filter.

A fingerprint sensor includes: a thin film transistor disposed on a substrate; a first insulating layer disposed on the thin film transistor; a first sensing electrode disposed on the first insulating layer and connected to the thin film transistor; a second insulating layer disposed on the first sensing electrode and including an opening exposing the first sensing electrode; a sensing semiconductor layer disposed in the opening of the second insulating layer and on the first sensing electrode, and including an N-type semiconductor layer, an I-type semiconductor layer, and a P-type semiconductor layer; and a second sensing electrode disposed on the sensing semiconductor layer. An upper surface of the sensing semiconductor layer and an upper surface of the second insulating layer are coplanar.

In-pixel separation structures may divide photodiodes of a pixel array into multiple regions. As a result, a lens of an image sensor device may be focused by using combining signals associated with different portions of the photodiodes. As a result, the lens may be focused faster and with fewer pixels of the pixel array, which conserves power, processing resources, and raw materials.

The present disclosure relates to semiconductor device. One example semiconductor device includes a plurality of unit pixels, where each unit pixel of the plurality of unit pixels includes a pair of transfer gates including a first transfer gate and a second transfer gate, a photoelectric converter, and a floating diffusion region spaced apart from the photoelectric converter. The first transfer gate and the second transfer gate are disposed asymmetrically with respect to the photoelectric converter and the floating diffusion region.

An optical blocking region formed with patterned metal reduces light reflection toward pixel sensors in a pixel sensor array. The optical blocking region may be formed of a metal nanoscale grid in order to reflect more light away from the pixel sensors. The optical blocking region may include a dielectric layer, supporting the patterned metal, with high absorption structures or shallow deep trench isolation structures in order to increase absorption and thus reduce light reflection toward the pixel sensors.

The present invention refers to a photosensitive pixel structure comprising a substrate with a front surface and a back surface, wherein at least one photosensitive diode is provided on one of the surfaces of the substrate. A first material layer is provided at least partially on the back surface of the substrate, wherein the material layer comprises a reflective layer, in order to increase a reflectivity at the back surface of the substrate. Further, the present invention refers to an array and an implant comprising such a photosensitive pixel structure, as well as to a method to produce the pixel structure.

A pixel array may include a metal shielding structure on a grid structure between pixel sensors in the pixel array. The metal shielding structure laterally extends outward from the grid structure to reflect photons of incident light that might otherwise travel between the grid structure and the isolation structure of the pixel sensors in the pixel array. The lateral extensions of the metal shielding reflect these photons to reduce crosstalk between adjacent pixel sensors, thereby increasing the performance of the pixel array.

An avalanche photodiode array for detecting electromagnetic radiation comprises: a semiconductor substrate (100) having a first main surface (101) and a second main surface (102), which are opposite one another, a plurality of n-doped anode regions (1) formed at the first main surface (101) and separated from one another by pixel isolation regions (7), a p-doped cathode region (3) arranged at the second main surface (102) opposite the anode regions, a drift region (4) between the plurality of anode regions (1) and the cathode region (3), and a p-doped multiplication layer (2) arranged below the plurality of anode regions (1) and below the pixel isolation regions (7), and is characterized by an n-doped field reduction layer (9) arranged below the plurality of anode regions (1) and the pixel isolation regions (7) and above the multiplication layer (2).

An image sensing device includes a photoelectric conversion region configured to generate photocharges, a photogate region configured to overlap the photoelectric conversion region and allow the photocharges to be collected in the photoelectric conversion region, and a transfer gate disposed adjacent to the photogate region in a first direction and configured to transmit the photocharges to a floating diffusion region. The photogate region includes a first photogate in which a length extending in a second direction is longer than a length of the photoelectric conversion region extending in the second direction, and a second photogate in which a length extending in the second direction is shorter than a length of the photoelectric conversion region extending in the second direction. The first photogate includes a recess region formed to contact the photoelectric conversion region, and extend vertically from one surface of a region where the photoelectric conversion region is located.

An image sensor device is disclosed. The image sensor device includes a substrate having a plurality of pixel regions. Two adjacent pixel regions are optically and electrically isolated by a deep trench isolation structure. In an embodiment, a method of forming the deep trench isolation structure includes receiving a workpiece comprising a first isolation structure formed in a front side of a substrate, forming a trench extending through the first isolation structure and the substrate, forming a dielectric liner to line the trench, depositing a conductive layer conformally over the workpiece after the forming of the dielectric liner, and depositing a dielectric fill layer over the conductive layer to fill the trench. A refractive index of the dielectric fill layer may be smaller than a refractive index of the conductive layer. The present disclosure also includes an alternative method for forming isolation structures at a back side of the substrate.