A display substrate, a method for fabricating the same, and a display device are disclosed. The display substrate comprises a plurality of pixels; and a plurality of slit patterns, which are arranged between at least two of the plurality of pixels, and comprise a plurality of slits arranged in a rubbing direction. Slit patterns are provided, and each of slit patterns comprises slits in the rubbing direction. Thus, during a rubbing alignment process, the slit patterns can guide a rubbing cloth to move in the rubbing direction. Accordingly, the alignment of the rubbing cloth is prevented from changing in the rubbing process, a good alignment layer is formed, rubbing Mura is avoided, and the lifetime of the rubbing cloth is extended.

A display device having at least a plurality of pixel circuits, connected to signal lines to which data signals in accordance with luminance information are supplied, arranged in a matrix, wherein pixel circuits of odd number columns and even number columns adjacent sandwiching an axis in a column direction parallel to an arrangement direction of the signal lines have a mirror type circuit arrangement symmetric about the axis of the column direction, and there are lines different from the signal lines between signal lines of adjacent pixel circuits.

An array substrate of display panel comprises a substrate, a first and second transistors disposed on the substrate. The first and second transistors are electrically connected and share a semiconducting layer which comprises a first lateral portion, a turning portion and a bottom portion. The turning portion connects to the first lateral portion. The bottom portion connects to the turning portion. In one embodiment, a first outer edge extending line of the first lateral portion, a second outer edge extending line of the bottom portion and a third outer edge of the turning portion defines a first region. A first inner edge extending line of the first lateral portion, a second inner edge extending line of the bottom portion and a third inner edge of the turning portion defines a second region. The area of the first region is smaller than that of the second region.

A TFT substrate, a TFT switch and a manufacturing method for the same are disclosed. The method includes steps of disposing a gate electrode layer on a substrate, thinning at least a portion of each side region along a thickness direction of the gate electrode layer in order to form two thin regions, disposing a semiconductor layer above the gate electrode layer, and disposing a source electrode layer and a drain electrode layer on the semiconductor layer, wherein, a contact region between the source electrode layer and the semiconductor layer, and a contact region between the drain electrode layer and the semiconductor layer are respectively corresponding to the two thin regions. The present invention can omit a doping process in order to achieve a good ohmic contact so as to solve a schottky contact problem.

Provided are liquid crystal display and the method for manufacturing the same. According to an aspect of the present disclosure, there is provided a liquid crystal display device, including: a first substrate; a gate electrode disposed on the first substrate; a semiconductor pattern layer disposed on the gate electrode; and a source electrode and a drain electrode disposed on the semiconductor pattern layer and facing each other, wherein the gate electrode includes a reference plane and a protrusion protruding from the reference plane in a horizontal direction, and the protrusion overlaps the source electrode and the drain electrode.

The present invention provides a display device and a manufacturing method thereof that can simplify manufacturing steps and enhance efficiency in the use of materials, and further, a manufacturing method that can enhance adhesiveness of a pattern. One feature of the invention is that at least one or more patterns needed for manufacturing a display panel, such as a conductive layer forming a wiring or an electrode or a mask for forming a desired pattern is/are formed by a method capable of selectively forming a pattern, thereby manufacturing a display panel.

A semiconductor device and a method of manufacturing the semiconductor device are provided. The semiconductor device includes a semiconductor layer, a gate electrode on the semiconductor layer, a first insulating layer between the semiconductor layer and the gate electrode; a second insulating layer on the gate electrode, source and drain electrodes corresponding to both ends of the semiconductor layer and disposed on the second insulating layer, and a doping layer disposed along contact holes of the first and second insulating layers, which expose the both ends of the semiconductor layer, such as, between the both ends of the semiconductor layer and the source and drain electrodes.

A transistor with stable electrical characteristics is provided. The transistor includes a first insulator over a substrate; first to third oxide insulators over the first insulator; a second insulator over the third oxide insulator; a first conductor over the second insulator; and a third insulator over the first conductor. An energy level of a conduction band minimum of each of the first and second oxide insulators is closer to a vacuum level than that of the oxide semiconductor is. An energy level of a conduction band minimum of the third oxide insulator is closer to the vacuum level than that of the second oxide insulator is. The first insulator contains oxygen. The number of oxygen molecules released from the first insulator measured by thermal desorption spectroscopy is greater than or equal to 1E14 molecules/cm.sup.2 and less than or equal to 1E16 molecules/cm.sup.2.

The present invention provides a manufacture method of a LTPS thin film transistor and a LTPS thin film transistor. The gate isolation layer is first etched to form the recess, and then the gate is formed on the recess so that the width of the gate is slightly larger than the width of the recess. Then, the active layer is implemented with ion implantation to form the source contact region, the drain contact region, the channel region and one transition region at least located between the drain contact region and the channel region. The gate isolation layer above the transition region is thicker than the channel region and can shield a part of the gate electrical field to make the carrier density here lower than the channel region to form a transition.

A highly reliable semiconductor device the yield of which can be prevented from decreasing due to electrostatic discharge damage is provided. A semiconductor device is provided which includes a gate electrode layer, a gate insulating layer over the gate electrode layer, an oxide insulating layer over the gate insulating layer, an oxide semiconductor layer being above and in contact with the oxide insulating layer and overlapping with the gate electrode layer, and a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer. The gate insulating layer includes a silicon film containing nitrogen. The oxide insulating layer contains one or more metal elements selected from the constituent elements of the oxide semiconductor layer. The thickness of the gate insulating layer is larger than that of the oxide insulating layer.