It is an object of the present invention to provide a semiconductor display device having an interlayer insulating film which can obtain planarity of a surface while controlling film formation time, can control treatment time of heating treatment with an object of removing moisture, and can prevent moisture in the interlayer insulating film from being discharged to a film or an electrode adjacent to the interlayer insulating film. An inorganic insulating film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover a TFT. Next, an organic resin film containing photosensitive acrylic resin is applied to the organic insulting film, and the organic resin film is partially exposed to light to be opened. Thereafter, an inorganic insulting film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover the opened organic resin film. Then, in the opening part of the organic resin film, a gate insulating film and the two layer inorganic insulating film containing nitrogen are opened partially by etching to expose an active layer of the TFT.

A photoelectric device includes an electrode structure, an LED (light emitting diode) element, a zener diode and a reflective cup. The LED element, the zener diode and the reflective cup are arranged on the electrode structure. The LED element and the zener diode are electrically connected in anti-parallel with each other. The reflective cup comprises an inner surface defined thereof and a nick defined in an outside of the reflective cup. The LED element is surrounded by the inner surface of the reflective cup and the zener diode is arranged in the nick.

A surface-mountable semiconductor component and a method for producing the same are disclosed. In an embodiment the component includes an optoelectronic semiconductor chip, first and second contact elements and a molded body, wherein the chip includes a semiconductor body having a semiconductor layer sequence with an active region provided for producing and/or receiving electromagnetic radiation and arranged between a first semiconductor layer and a second semiconductor layer, wherein the first contact elements are electrically conductively connected to the first semiconductor layer and the second contact elements are electrically conductively connected to the second semiconductor layer, wherein the molded body at least partially encloses the optoelectronic semiconductor chip, wherein the semiconductor component includes a mounting face formed by a surface of the molded body, and wherein the first and second contact elements protrudes through the molded body in a region of the mounting face.

A light-emitting assembly includes a first substrate, a first electrode layer, a light-emitting layer, a second electrode layer, a second substrate, a first conductive member and a second conductive member. The first electrode layer, the light-emitting layer and the second electrode layer are sequentially disposed on the first substrate. An area of the second electrode layer is entirely located within an area of the light emitting layer. The second electrode layer is located between the second substrate and the light-emitting layer. The first and second conductive members are disposed between the first and second substrates. The first electrode layer is electrically connected to a first circuit on the second substrate through the first conductive member. The second electrode layer is electrically connected to a second circuit on the second substrate through the second conductive member. The second conductive member is located within the area of the second electrode layer.

An optoelectronic device including a semiconductor substrate having a face, light-emitting diodes arranged on the face and including wired conical or frustoconical semiconductor elements, and an at least partially transparent dielectric layer covering the light-emitting diodes, the refractive index of the dielectric layer being between 1.6 et 1.8.

A light emitting layer including a plurality of light emitting particles embedded within a host matrix material. Each of said light emitting particles includes a population of semiconductor nanoparticles embedded within a polymeric encapsulation medium. A method of fabricating a light emitting layer comprising a plurality of light emitting particles embedded within a host matrix material, each of said light emitting particles comprising a population of semiconductor nanoparticles embedded within a polymeric encapsulation medium. The method comprises providing a dispersion containing said light emitting particles, depositing said dispersion to form a film, and processing said film to produce said light emitting layer.

An optical semiconductor element mounting package that has good adhesion between the resin molding and the lead electrodes and has excellent reliability is provided, as well as an optical semiconductor device using the package is also provided. The optical semiconductor element mounting package having a recessed part that serves as an optical semiconductor element mounting region, wherein the package is formed by integrating: a resin molding composed of a thermosetting light-reflecting resin composition, which forms at least the side faces of the recessed part; and at least a pair of positive and negative lead electrodes disposed opposite each other so as to form part of the bottom face of the recessed part, and there is no gap at a joint face between the resin molding and the lead electrodes.

A horizontal LED die is flip-chip mounted on a mounting substrate to define a gap that extends between the closely spaced apart anode and cathode contacts of the LED die, and between the closely spaced apart anode and cathode pads of the substrate. An encapsulant is provided on the light emitting diode die and the mounting substrate. The gap is configured to prevent sufficient encapsulant from entering the gap that would degrade operation of the LED.

A nanostructure semiconductor light emitting device includes a base layer, an insulating layer, a plurality of light emitting nanostructures, and a contact electrode. The base layer is formed of a first conductivity-type semiconductor material. The insulating layer is disposed on the base layer. Each light emitting nanostructure is disposed in a respective opening of a plurality of openings in the base layer, and includes a nanocore formed of the first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on a surface of the nanocore. The contact electrode is spaced apart from the insulating layer and is disposed on a portion of the second conductivity-type semiconductor layer. A tip portion of the light emitting nanostructure has crystal planes different from those on side surfaces of the light emitting nanostructure.

A method for manufacturing a light emitting device comprises a package preparation step of preparing a package having a recess in which a light emitting element is locatable, wherein the package includes a projection extending from an upper surface of the package, the projection at least partially surrounding the recess, a sealing resin forming step of filling said recess in which said light emitting element is located with a sealing resin, and providing said sealing resin higher than the height of said package, and a sealing resin cutting step of cutting the sealing resin such that an upper surface of the sealing resin is at a height that is substantially the same as a height of the upper surface of the package.