An integration method of fabricating optical sensor device and thin film transistor device includes the follow steps. A substrate is provided, and a gate electrode and a bottom electrode are formed on the substrate. A first insulating layer is formed on the gate electrode and the bottom electrode, and the first insulating layer at least partially exposes the bottom electrode. An optical sensing pattern is formed on the bottom electrode. A patterned transparent semiconductor layer is formed on the first insulating layer, wherein the patterned transparent semiconductor layer includes a first transparent semiconductor pattern covering the gate electrode, and a second transparent semiconductor pattern covering the optical sensing pattern. A source electrode and a drain electrode are formed on the first transparent semiconductor pattern. A modification process including introducing at least one gas is performed on the second transparent semiconductor pattern to transfer the second transparent semiconductor pattern into a conductive transparent top electrode.

An LCD panel, an array substrate and a manufacturing method for TFT are disclosed. The method includes: providing a substrate; forming a first metal layer on the substrate, wherein the first metal layer includes an aluminum metal layer, an aluminum oxide layer and a molybdenum metal layer stacked sequentially; patterning the first metal layer to form a gate electrode of a TFT; sequentially forming a gate insulation layer, a semiconductor layer and an ohmic contact layer on the gate electrode; forming a second metal layer on the ohmic contact layer; and patterning the second metal layer to form a source electrode and a drain electrode of the TFT. The present invention can inhibit hillock generated by the aluminum metal layer in a high temperature environment, avoid the short circuit generated among the gate, the source and the drain electrodes of the TFT to ensure the display quality of an image.

A TFT and manufacturing method thereof, an array substrate and manufacturing method thereof, an X-ray detector and a display device are disclosed. The manufacturing method includes: forming a gate-insulating-layer thin film (3), a semiconductor-layer thin film (4) and a passivation-shielding-layer thin film (5) successively; forming a pattern (5) that includes a passivation shielding layer through one patterning process, so that a portion, sheltered by the passivation shielding layer, of the semiconductor-layer thin film forms a pattern of an active layer (4a); and performing an ion doping process to a portion, not sheltered by the passivation shielding layer, of the semiconductor-layer thin film to form a pattern comprising a source electrode (4c) and a drain electrode (4b). The source electrode (4c) and the drain electrode (4b) are disposed on two sides of the active layer (4a) respectively and in a same layer as the active layer (4a). The manufacturing method can reduce the number of patterning processes and improve the performance of the thin film transistor in the array substrate.

The disclosure provides a liquid crystal display panel, an array substrate and a manufacturing method thereof. In the method, controllable resistance spacer layers are formed on at least one of a source doped region and a drain doped region of a low temperature polysilicon active layer, wherein when a turn-on signal is not applied to the gate layer, the controllable resistance spacer layers serve as a blocking action for a flowing current, and when the turn-on signal is applied to the gate layer, the controllable resistance spacer layers serve as a conducting action for the flowing current, such that a contact region formed of the controllable resistance spacer layers is connected the corresponding source layer and the corresponding drain through the controllable resistance spacer layers. Therefore, the disclosure is capable of effectively decreasing a leakage of a thin film transistor.

A method for manufacturing an array substrate, including steps of forming a semiconductor pattern, a gate electrode and a first insulation pattern sequentially on a base substrate at different layers, an orthogonal projection of the semiconductor pattern onto the base substrate covering an orthogonal projection of the first insulation pattern onto the base substrate, and the orthogonal projection of the first insulation pattern onto the base substrate covering an orthogonal projection of the gate electrode onto the base substrate, and subjecting the semiconductor pattern to ion implantation through a single ion implantation process using the first insulation pattern and the gate electrode as a mask plate, so as to form an active layer, a heavily-doped source electrode region, a lightly-doped source electrode region, a heavily-doped drain electrode region, and a lightly-doped drain electrode region.

A thin-film transistor (TFT) and a manufacturing method thereof, an array substrate and a manufacturing method thereof, and a display device are disclosed. The manufacturing method of a TFT includes: forming an active layer, a gate electrode, a source electrode and a drain electrode respectively electrically connected with the active layer, and a gate insulating layer disposed between the gate electrode and the active layer, so that the gate electrode, the source electrode and the drain electrode are formed in the same patterning process. The method can reduce the number of masks used in the manufacturing process of the TFT or an array substrate, reduce the technology process, improve the productivity, and reduce the production cost.

The disclosure provides a manufacturing method for TFT array substrate, a TFT array substrate and a display device. The manufacturing method includes following steps: in sequence, forming a gate pattern layer, a gate insulating layer, a patterned poly-silicon layer, a separation layer on s substrate, and adopting a mask to form a source pattern layer and a drain pattern layer on the separation layer by photolithography processes. The source pattern layer and the drain pattern layer are connected to the patterned poly-silicon layer. The mask blocks one side of the channel area, and the same mask is adopted to form a lightly doped area on the other side of the channel area not blocked by the mask. The disclosure may reduce production costs and has great design flexibility.

The present invention provides a method for manufacturing the N-type TFT, which includes subjecting a light shielding layer to a grating like patternization treatment for controlling different zones of a poly-silicon layer to induce difference of crystallization so as to have different zones of the poly-silicon layer forming crystalline grains having different sizes, whereby through just one operation of ion doping, different zones of the poly-silicon layer have differences in electrical resistivity due to difference of grain size generated under the condition of identical doping concentration to provide an effect equivalent to an LDD structure for providing the TFT with a relatively low leakage current and improved reliability. Further, since only one operation of ion injection is involved, the manufacturing time and manufacturing cost can be saved, damages of the poly-silicon layer can be reduced, the activation time can be shortened, thereby facilitating the manufacture of flexible display devices.

A method of manufacturing a substrate includes: irradiating, along a first path, a laser beam emitted from a source onto a substrate, wherein the substrate includes a target layer of the laser beam, and wherein the substrate is disposed on a stage; and irradiating, along a second path, a portion the laser beam, which was emitted from the source and reached the target layer, by reflecting the laser beam back onto the target layer using a reflection mirror. An area of a second region of the target layer is greater than an area of a first region of the target layer, wherein the laser beam is irradiated along the second path in the second region, and the laser beam is irradiated along the first path in the first region.

In the present invention, At least one row of lens arrays, in which a plurality of lenses are arranged in a direction intersecting with the conveying direction of a substrate to correspond to the plurality of TFT forming areas set in a matrix on the substrate, is shifted in the direction intersecting with the conveying direction of the substrate, to thereby align the lenses in the lens array with the TFT forming areas on the substrate based on the alignment reference position. The laser beams are irradiated onto the lens array when the substrate moves and the TFT forming areas reach the underneath of the corresponding lenses of the lens array, and the laser beams are focused by the plurality of lenses to anneal the amorphous silicon film in each TFT forming area.