An image sensor array including a carrier substrate; a first group of photodiodes coupled to the carrier substrate, where the first group of photodiodes include a first photodiode, and where the first photodiode includes a semiconductor layer configured to absorb photons at visible wavelengths and to generate photo-carriers from the absorbed photons; and a second group of photodiodes coupled to the carrier substrate, where the second group of photodiodes include a second photodiode, and where the second photodiode includes a germanium-silicon region fabricated on the semiconductor layer, the germanium-silicon region configured to absorb photons at infrared or near-infrared wavelengths and to generate photo-carriers from the absorbed photons.

A light receiving apparatus includes a light receiving device including a compound semiconductor substrate, photodiodes, and bump electrodes; and a semiconductor integrated device including a silicon substrate and read-out circuits. The integrated device is bonded with the light receiving device to face each other in a direction of a first axis through the bump electrodes. The light receiving device has a back surface with first and second back edges extending in a direction of a second axis intersecting with the first axis. The light receiving device has a first slope face extending from the first back edge along a first reference plane, and a second slope face extending from the second back edge along a second reference plane. The back surface of the light receiving device extends along a third reference plane intersecting with the first axis. The first and second reference planes are inclined with the third reference plane.

Systems and methods may be provided for coupling together semiconductor devices. One or more of the semiconductor devices may be provided with an array of bump contacts formed in an etch back process. The bump contacts may be indium bumps. The indium bumps may be formed by depositing a sheet of indium onto a surface of a device substrate, depositing and patterning a layer of photoresist over the indium layer, and selectively etching the indium layer to the surface of the substrate using the patterned photoresist layer to form the indium bumps. The substrate may be an infrared detector substrate. The infrared detector substrate may be coupled to a readout integrated circuit substrate using the bumps.

A hybrid pixel sensor array is provided. Each pixel of the array comprises: a sensor for generating an imaging signal; a Charged-Coupled Device (CCD) array, coupled to the sensor so as to receive samples from the imaging signal and configured for storage of a plurality of samples; and active CMOS circuitry, coupled to the CCD array for generating a pixel output signal from the stored samples. The sensors of the pixels are part of a sensor portion of the hybrid pixel sensor array that is separate from both the CCD array and active CMOS circuitry of the pixels.

Methods, devices, and systems for optical sensing are provided. In one aspect, an optical sensing apparatus includes: a first absorption region configured to absorb light in at least a first spectrum with visible or near infrared wavelengths; a second absorption region formed over the first absorption region, the second absorption region configured to absorb light in at least a second spectrum with near infrared or shortwave infrared wavelengths; and a third absorption region formed over the second absorption region, the third absorption region configured to absorb light in at least a third spectrum with shortwave infrared or mid-wave infrared wavelengths.

A distance measuring device (500) including a plurality of pixels (11a, 12a) provided in a row direction and a column direction, a plurality of AD conversion circuits (6, 7) provided in the row direction, each of the plurality of AD conversion circuits performing AD conversion on pixel signals of a corresponding column, and a signal processing section (92) that generates a depth image signal based on conversion results of the plurality of AD conversion circuits, wherein the plurality of pixels (11a, 12a) include a plurality of valid pixels (11a) provided in the row direction and the column direction to correspond to the depth image signal, each of the valid pixels including a plurality of charge transfer sections (TA, TB) that extract pixel signals corresponding to a light amount of incident light in different periods, and a plurality of light-shielded pixels (12a) provided in the column direction on at least one of two end sides in the row direction with respect to a region provided with the plurality of valid pixels (11a), each of the plurality of light-shielded pixels being covered with a light-shielding film (M).

An optoelectronic device manufacturing method, including the following successive steps: transferring an active inorganic photosensitive diode stack on an integrated control circuit previously formed inside and on top of a semiconductor substrate; and forming a plurality of organic light-emitting diodes on the active photosensitive diode stack.

Provided are a light receiving element and an electronic apparatus that prevent generation of a false signal due to light emission caused by a circuit. The light receiving element includes a plurality of pixels. Each of the plurality of pixels includes: a photoelectric conversion layer that photoelectrically converts incident light; a signal reading circuit including an in-pixel transistor that is provided on a side opposite to a light incident side surface of the photoelectric conversion layer, amplifies signal charge generated by the photoelectric conversion layer, and reads the signal charge out of a pixel array; and a metal junction that bonds the photoelectric conversion layer and the signal reading circuit. The metal junction covers the in-pixel transistor when viewed from the light incident side surface of the photoelectric conversion layer.

A sensor includes an array of optically active pixels disposed on a semiconductor die. The array of optically active pixels includes at least one pixel (P1) configured to detect short wavelength infrared radiation (SWIR), and at least one pixel (P2) configured to detect visible light incident on the sensor.

A sensing device includes a first die, having a front and a back side, defining a first array of first sensor elements outputting first electrical signals in response to optical radiation that is incident on the front side of the first die in a first band of wavelengths. A second die has a first side fixedly aligned with the first die back side and defines a second array of second sensor elements that output second electrical signals in response to the optical radiation in a second band of wavelengths, different from the first band, which passes through the first die and is incident on the second die first side. An optical metasurface is disposed between the first and second dies and directs the optical radiation in the second band of wavelengths onto the second sensor elements. Readout circuitry reads the first and second electrical signals out of the device.