A solar battery cell, including semiconductor substrate, an insulating film formed on one face side of the semiconductor substrate, and an electrode electrically connected to the one face side of the semiconductor substrate, the electrode being embedded in a groove that is provided on the insulating film and provided so as to protrude from a surface of the insulating film by a same width as the groove.

A method of manufacturing a solar cell is discussed. The method includes forming a textured structure on a front surface of a silicon substrate; forming a front passivation layer on the front surface of the silicon substrate; forming an anti-reflection layer on the front passivation layer; forming a first layer having a dopant of a first conductive type on a first portion of a rear surface of the silicon substrate; forming a second layer having a dopant of a second conductive type on the first layer and a second portion of the rear surface of the silicon substrate; diffusing the dopant of the first layer and the dopant of the second layer into the silicon substrate to form a n-doped region and a p-doped region, respectively, wherein the n-doped region and the p-doped region are disposed at about a same depth from the rear surface of the silicon substrate.

A solar cell includes a substrate having a front surface and a back surface; an emitter formed on the front surface of the substrate; a plurality of first electrodes positioned on the emitter and extended in first direction; a plurality of first bus lines positioned on the emitter and extended in second direction crossing to the first direction; a plurality of back surface field regions formed on the back surface of the substrate and extended in the first direction; a plurality of second electrodes positioned on the plurality of back surface field regions and extended in the first direction; and, a plurality of second bus lines extended in the second direction.

Disclosed are a paste and a method for manufacturing a solar cell through screen printing said paste. The paste contains inorganic powder; an organic solvent; and a binder, and the inorganic powder has a tap density of 0.01 to 20 g/cm.sup.3. An etching mask pattern formed using said paste has good etch resistance in an etch-back process by which a selective emitter is formed, and thus, a stable emitter can be formed.

The manufacturing method of a solar cell includes forming a photoelectric conversion unit and forming an electrode connected to the photoelectric conversion unit. The step of forming the electrode includes forming a seed formation layer connected to the photoelectric conversion unit, forming an anti-oxidation layer on the seed formation layer, performing a thermal process such that a material of the seed formation layer and a material of the photoelectric conversion unit react with each other to form a chemical bonding layer at a portion at which the seed formation layer and the photoelectric conversion unit are adjacent to each other, forming a conductive layer and a capping layer on the seed formation layer in a state in which a mask is used on the seed formation layer, and patterning the seed formation layer using either the conductive layer or the capping layer as a mask.

A thickness of material may be detached from a substrate along a cleave plane, utilizing a cleaving process controlled by a releasable constraint plate. In some embodiments this constraint plate may comprise a plate that can couple side forces (the P-plate) and a thin, softer compliant layer (the S-layer) situated between the P-plate and the substrate. In certain embodiments a porous surface within the releasable constraint plate and in contact to the substrate, allows the constraint plate to be secured to the substrate via a first pressure differential. Application of a combination of a second pressure differential within a pre-existing cleaved portion, and a linear force to a side of the releasable constraint plate bound to the substrate, generates loading that results in controlled cleaving along the cleave plane.

A method of manufacturing a solar cell is disclosed. The method includes forming a doping region including first and second portions having different doping concentrations by ion-implanting a dopant into a semiconductor substrate and forming an electrode connected to the doping region. In the forming of the doping region, the first and second portions are simultaneously formed by the same process using a mask that is disposed at a distance from the semiconductor substrate.

A versatile silicone resin reflective substrate which exhibits high reflectance of high luminance light from an LED light source over a wide wavelength from short wavelengths of approximately 340-500 nm, which include wavelengths from 380-400 nm near lower limit of the visible region, to longer wavelength in the infra-red region. The silicone resin reflective substrate has a reflective layer which contains a white inorganic filler powder dispersed in a three-dimensional cross linked silicone resin, the inorganic filler powder having a high reflective index than the silicone resin. The reflective layer is formed on a support body as a film, a solid, or a sheet. The silicone resin reflective substrate can be easily formed as a wiring substrate, a packaging case or the like, and can be manufactured at low cost and a high rate of production.

A photovoltaic device, particularly a solar cell, comprises an interface between a layer of Group III-V material and a layer of Group IV material with a thin silicon diffusion barrier provided at or near the interface. The silicon barrier controls the diffusion of Group V atoms into the Group IV material, which is doped n-type thereby. The n-type doped region can provide the p-n junction of a solar cell in the Group IV material with superior solar cell properties. It can also provide a tunnel diode in contact with a p-type region of the III-V material, which tunnel diode is also useful in solar cells.

A method for manufacturing asolar cell includes texturing a front surface of a semiconductor substrate having a first conductive type dopant by using a dry etching method, forming an emitter layer by ion-implanting a second conductive type dopant into the front surface of the semiconductor substrate, forming a back passivation film on a back surface of the semiconductor substrate; and forming a first electrode electrically connected to the emitter layer and a second electrode being in partial contact with the back surface of the semiconductor substrate.