A light-emitting element includes: an anode and a cathode; and a quantum dot layer positioned between the anode and the cathode, the quantum dot layer including a first quantum dot and a second quantum dot. The quantum dot layer includes a crystalline body serving as a core of the first quantum dot, and an inorganic amorphous material formed at at least a part of a surface of the crystalline body.

A light-emitting diode (LED) epitaxial structure, an LED device, and a manufacturing method of an LED epitaxial structure are provided. The LED epitaxial structure 100 includes an n-type confinement layer 20, an n-type waveguide layer 30, a light-emitting layer 40, a p-type waveguide layer 50, and a p-type confinement layer 60 that are sequentially stacked. The p-type waveguide layer 50 includes a first p-type waveguide sub-layer 51, an electron blocking layer 52, and a second p-type waveguide sub-layer 53 that are sequentially stacked, where the first p-type waveguide sub-layer 51 is disposed closer to the light-emitting layer 40 than the second p-type waveguide sub-layer 53, and the electron blocking layer 52 includes at least one oxide layer of aluminum.sub.ygallium.sub.1-yarsenide (Al.sub.yGa.sub.1-yAs) 521.

A light emitting element includes: a first semiconductor layer including a semiconductor of a first type; a second semiconductor layer including a semiconductor of a second type different from the first type; and an active layer between the first and second semiconductor layers, the active layer including a first active area including a first well layer, and a second active area including a second well layer. The first well layer has a first band gap, and the second well layer has a second band gap smaller than the first band gap. At least a portion of the first active area is between the second active area and the second semiconductor layer. A distance between the second active area and the second semiconductor layer is equal to or greater than 0.1 times of a distance between the first and second semiconductor layers.

A light-emitting element having high emission output power and light emission efficiency and a method of manufacturing of the same are provided. A light-emitting element according to the present disclosure includes an n-type semiconductor layer; an InAsSbP active layer containing at least In and As on the n-type semiconductor layer; a p-type semiconductor layer that is lattice-matched with the InAsSbP active layer, on the InAsSbP active layer; and a p-type InGaAs window layer that is lattice-mismatched with the p-type semiconductor layer, on the p-type semiconductor layer, wherein the p-type semiconductor layer has a thickness of 20 nm or more and 520 nm or less.

Provided is a light-emitting device including a plurality of light emission structures configured to emit light of different colors, wherein each light emission structure of the plurality of light emission structures includes a first conductive semiconductor layer, an active layer having a quantum well structure, and a second conductive semiconductor layer, and a current blocking layer between at least one pair of adjacent light emission structures of the plurality of light emission structures, the current blocking layer including at least one PN junction layer, wherein the at least one PN junction layer includes a first blocking semiconductor layer doped with a first conductive impurity at a first concentration and a second blocking semiconductor layer on the first blocking semiconductor layer and doped with a second conductive impurity at a second concentration.