A light emitting element includes a first semiconductor layer; an active layer on a surface of the first semiconductor layer; a second semiconductor layer on the active layer; an insulating film to enclose an outer periphery of each of the first semiconductor layer, the active layer, and the second semiconductor layer; and an electrode layer on the second semiconductor layer. The first semiconductor layer includes a first area that is covered by the insulating film, and a second area that is not covered by the insulating film. A perimeter of the outer periphery of the first semiconductor layer in the first area and a perimeter of the outer periphery of the first semiconductor layer in the second area are different from each other.

A composition of matter comprising a doped substrate a mask layer having a thickness of 2 nm or less on top of said substrate wherein a plurality of openings are present through said mask layer; and wherein a plurality of nanowires or nanopyramids are grown from said substrate in said openings, said nanowires or nanopyramids comprising at least one semiconducting group III-V compound.

According to one embodiment, a light emitting device includes first and second electrodes and a first structure. At least a part of the first structure is provided between the first and second electrodes. The first structure includes a light emitting layer along a first plane, an optical member, and a stacked body. The stacked body is provided between the optical member and the second electrode. The optical member includes first regions arranged along the first plane, and a second region including a first partial region between the first regions. A refractive index of the first regions is different from a refractive index of the second region. The stacked body includes first layers and second layers. One of the first layers is between one of the second layers and another one of the second layers. A material of the second layers is different from a material of the first layers.

A light emitting device including a substrate having a protruding pattern on an upper surface thereof, a first sub-unit disposed on the substrate, a second sub-unit disposed between the substrate and the first sub-unit, a third sub-unit disposed between the substrate and the second sub-unit, a first insulation layer at least partially in contact with side surfaces of the first, second, and third sub-units, and a second insulation layer at least partially overlapping with the first insulation layer, in which at least one of the first insulation layer and the second insulation layer includes a distributed Bragg reflector.

A micro light emitting diode includes a semiconductor unit having a first surface and a second surface, and including a first type semiconductor layer, an active layer, and a second type semiconductor layer. The first surface has a roughened portion that is located within a projection of the active layer. The projection of the roughened portion has a projected area not greater than that of the active layer. A micro light emitting device and a display are also disclosed.

A method for manufacturing an optoelectronic device including forming, by metal-organic chemical vapor deposition, MOCVD, wire-shaped, conical, or frustoconical semiconductor elements made of a III-V compound, doped or undoped, each semiconductor element extending along an axis and including a top, and forming by remote plasma chemical vapor deposition, RPCVD, or by molecular-beam epitaxy, MBE, or by hydride vapor phase epitaxy, HVPE, for each semiconductor element, an active area only on said top including at least a first semiconductor layer made of the III-V compound and a second semiconductor layer made of the III-V compound and an additional group-III element.

A display device according to an embodiment includes a substrate including a plurality of first pads for transmitting a gate signal, a plurality of second pad for transmitting a data signal, a plurality of third pads for transmitting a first power voltage, and a plurality of fourth pads for transmitting a second power voltage different from the first power voltage, into a display area; and a plurality of display modules each including first to fourth connection electrodes attached to the first to the fourth pads, respectively, a first transistor electrically connected to the third connection electrode and having an activation layer including a oxide semiconductor, a second transistor electrically connected to the first connection electrode and the second connection electrode, and a light emitting diode electrically connected to the first transistor and the fourth connection electrode.

The light emitting device includes an active layer, a plurality of first conductivity-type semiconductor layers under the active layer, and a plurality of second conductivity-type semiconductor layers on the active layer. The plurality of first conductivity-type semiconductor layers include an adsorption prevention layer spaced farthest from the active layer. The adsorption prevention layer can include Al.sub.x1Ga.sub.(1-x1)InP, x1 can be 0.6 or less, and the thickness of the adsorption prevention layer can be 2 m or less.

A light emitting assembly includes a micro-LED, and a supporting substrate. The micro-LED includes a semiconductor structure and a first insulating dielectric layer. The semiconductor structure includes a first-type semiconductor laver; second-type semiconductor layer, and has a first mesa surface defined by the first-type semiconductor layer, and a second mesa surface defined by the second-type semiconductor layer. The first insulating dielectric layer covers the first and second mesa surfaces and has a first mesa covering portion that covers the first mesa surface, and two bridging arms projecting from the first mesa covering portion. The two bridging arms are located on two opposite sides of the semiconductor structure and connect with the supporting substrate so that the micro-LED is supported by the supporting substrate. The two bridging arms have a thickness which is less than a thickness of the first mesa covering portion on the first mesa surface.

In at least on embodiment, the optoelectronic semiconductor device comprises a semiconductor layer sequence which has an n-side stack, a p-side stack and an active region between the n-side stack and the p-side stack of a pn-junction, wherein the n-side stack comprises a second layer being doped with two different n-type dopants, a first one of the n-type dopants has an atomic number of at most 14 and a second one of the n-type dopants is S, Se or Te, the n-side stack further comprises a first layer being doped with the second one of the n-type dopants, and the second layer is located between the active region and the first layer.