An LED includes a first composite layer on a first of its doped layers. Primary vias extend through the first composite layer, through the first doped layer and active region of the LED, and into a second doped layer thereof. A second composite layer (TCO, dielectric, multilayer reflector, and metal layers) is positioned on the second doped layer within the primary vias, on lateral surfaces of the primary vias, and on portions of the first composite layer. A dielectric spacer layer separates the first composite layer, the first doped layer, and the active region from the second composite layer. The TCO layer includes embedded electrical contact areas outside the primary vias, each being separated from the first doped layer by the first composite layer and the dielectric spacer layer. The second composite layer within the primary vias increases LED luminance (by reducing absorption, increasing reflectivity, and reducing darkening or dimming).

A unit pixel including a first light emitting stack; a second light emitting stack disposed under the first light emitting stack, and having an area greater than that of the first light emitting stack; a third light emitting stack disposed under the second light emitting stack, and having an area greater than that of the second light emitting stack, in which at least one of the first through third light emitting stacks includes a side surface having an inclination angle within a range of about 30 degrees to about 70 degrees with respect to a first plane parallel to a top surface of the third light emitting stack.

Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly arrangements of lumiphoric materials within LEDs and related methods are disclosed. Lumiphoric materials are incorporated or otherwise embedded within LED chips and LED wafers. Embedded lumiphoric materials are provided so that at least some portions of light generated by active LED structures are subject to wavelength conversion before exiting LED chip surfaces. Lumiphoric material layers include arrangements of lumiphoric particles and binder layers positioned between reflective layers and active LED structures. Lumiphoric material layers and/or lumiphoric particles may be patterned within regions of LED chips and/or LED wafers. Related methods include depositing lumiphoric particles and binder layers before reflective layers in LED chips and LED wafers.

In an embodiment a radiation emitting semiconductor body includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type and an active region located between the first semiconductor region and the second semiconductor region, wherein the active region comprises InGaAlP, wherein the first conductivity type is n-conductive and the second conductivity type is p-conductive, wherein the active region has a larger band gap in an edge region of the semiconductor body than in a central region of the semiconductor body, and wherein a band gap of the second semiconductor region in the edge region and in the central region is the same.

A light emitting element includes: a first semiconductor layer including a semiconductor of a first type; a second semiconductor layer including a semiconductor of a second type different from the first type; and an active layer between the first and second semiconductor layers, the active layer including a first active area including a first well layer, and a second active area including a second well layer. The first well layer has a first band gap, and the second well layer has a second band gap smaller than the first band gap. At least a portion of the first active area is between the second active area and the second semiconductor layer. A distance between the second active area and the second semiconductor layer is equal to or greater than 0.1 times of a distance between the first and second semiconductor layers.

Provided is a III-V compound semiconductor light-emitting element having good light emission output relative to injected power compared to conventional light-emitting elements. The III-V compound semiconductor light-emitting element includes an n-type cladding layer, a light-emitting layer, and a p-type cladding layer in stated order and includes an undoped electron blocking layer between the light-emitting layer and the p-type cladding layer. The light-emitting layer has a layered structure in which a barrier layer and a well layer are repeatedly stacked. At a conduction band, a band gap of the electron blocking layer is larger than band gaps of the barrier layer and the p-type cladding layer, and the band gap of the p-type cladding layer is larger than the band gap of the barrier layer. At a valence band, a band gap of the electron blocking layer is between band gaps of the barrier layer and the cladding layer.

A light emitting element includes an emission stacked pattern and an insulating film. The emission stack pattern includes a first conductive semiconductor layer, an active layer disposed on the first conductive semiconductor layer, and a second conductive semiconductor layer disposed on the active layer. The insulating film surrounds an outer surface of the emission stacked pattern and has a non-uniform thickness.

An optoelectronic semiconductor component includes a semiconductor layer stack including a first semiconductor region, a second semiconductor region, and an active zone arranged between the first and second semiconductor regions. The second semiconductor region includes a first semiconductor layer and a second semiconductor layer. The second semiconductor layer is arranged on a side of the first semiconductor layer facing away from the active zone. At least one depression extends from a first main surface of the semiconductor layer stack through the first semiconductor region and the active zone and ends at the second semiconductor layer. The first semiconductor layer includes a first compound semiconductor material and the second semiconductor layer includes a second compound semiconductor material. The first compound semiconductor material has a higher aluminum content than the second compound semiconductor material.

A method for processing an optoelectronic device includes providing a growth substrate having one of a [111], [110] or [100] surface with a (Ga.sub.xAl.sub.1x).sub.yIn.sub.1yP buffer layer located on the growth substrate having a parameter x between 0.2 and 0.8, inclusive, and a parameter y between 0.3 and 0.7, inclusive, and re-growing a doped (Ga.sub.xAl.sub.1x).sub.yIn.sub.1yP layer with a parameter x between 0.4 and 0.6, inclusive, and a parameter y between 0.3 and 0.7, inclusive, on exposed surfaces of an AlInP layer deposited on the buffer layer, the exposed surfaces surrounded by a structured hard mask comprising an amorphous material on non-exposed surfaces of the AlInP layer, wherein edges of the hard mask adjacent to at least one exposed portion of the of a surface of the AlInP layer extend along the [111] B lateral surfaces when the substrate has a [111] surface, or extend along the [110] lateral surfaces when the substrate has a [100] surface, or extend along the [100] lateral surfaces when the substrate has a [110] surface.

In an embodiment an optoelectronic device includes an epitaxial layer stack having at least a first epitaxial layer and a second epitaxial layer arranged above the first epitaxial layer, wherein the following layers are embedded in the epitaxial layer stack a first semiconductor layer of a first conductivity type, an active layer arranged above the first semiconductor layer and configured to generate light, and a second semiconductor layer of a second conductivity type arranged above the active layer, wherein an interface between the first epitaxial layer and the second epitaxial layer extends at least partially through the first semiconductor layer and/or the second semiconductor layer, and wherein the active layer is embedded in a non-doped barrier layer, the barrier layer covering one or more side surfaces of the active layer.