Disclosed are a light-emitting device, a manufacturing method thereof, and a display screen. In the light-emitting device, an isolation trench is formed from one side of the first semiconductor layer to one side of the second semiconductor layer. A reflective structure is formed on the side wall of the isolation trench and the first semiconductor layer, which helps to reduce light loss and improving the light output efficiency of the device. The isolation trench does not completely penetrate the second semiconductor layer, so that the second semiconductor layer located on the light output surface side is a continuous and uninterrupted integrated structure, and a surface thereof remains flat so that the transparent conductive layer has a flat structure, improving the overall coverage of the transparent conductive layer. The present invention has no cracks, peeling problems, thus improving the electrical stability of the device and increasing the reliability thereof.

A method to produce a semiconductor laser diode (LD) including a sampled grating (SG) is disclosed. The method prepares various resist patterns each including grating regions and space regions alternately arranged along an optical axis. The grating regions and the space region in respective cavity types have total widths same with the others but the grating regions in respective types has widths different from others. After the formation of the grating patterns based on the resist patterns, only one of the grating patterns is used for subsequent processes.

A light-emitting device comprises a first light-emitting semiconductor stack comprising a first active layer; a second light-emitting semiconductor stack below the first light-emitting semiconductor stack, wherein the second light-emitting semiconductor stack comprises a second active layer; a wavelength filter between the first light-emitting semiconductor stack and the second light-emitting semiconductor stack; a protecting layer between the wavelength filter and the second light-emitting semiconductor stack; and wherein the first light-emitting semiconductor stack further comprises a first semiconductor layer and a second semiconductor layer sandwiching the first active layer, the second light-emitting semiconductor stack further comprises a third semiconductor layer and a fourth semiconductor layer sandwiching the second active layer, wherein the second semiconductor layer has a first band gap, the third semiconductor layer has a second band gap, and the protecting layer has a third band gap between the first band gap and the second band gap.

A high-brightness light-emitting diode with surface microstructure and preparation and screening methods thereof are provided. The ratio of total roughened surface area of light transmission surface of a light emitting diode to vertically projected area is greater than 1.5, and the peak density of light transmission surface is not less than 0.3/um.sup.2. The higher the ratio of total roughened surface area of an epitaxial wafer to vertically projected area and the higher the number of peak over the critical height within a unit area, the more beneficial to improve light extraction efficiency of the epitaxial wafer. As a result, light extraction efficiency of the epitaxial wafer is greatly improved.

A method of fabricating an ultraviolet (UV) light emitting device includes receiving a UV transmissive substrate, forming a first UV transmissive layer comprising aluminum nitride upon the UV transmissive substrate using a first deposition technique at a temperature less than about 800 degrees Celsius or greater than about 1200 degrees Celsius, forming a second UV transmissive layer comprising aluminum nitride upon the first UV transmissive layer comprising aluminum nitride using a second deposition technique that is different from the first deposition technique, at a temperature within a range of about 800 degrees Celsius to about 1200 degrees Celsius, forming an n-type layer comprising aluminum gallium nitride layer upon the second UV transmissive layer, forming one or more quantum well structures comprising aluminum gallium nitride upon the n-type layer, and forming a p-type nitride layer upon the one or more quantum well structures.

A micro LED display panel includes a micro LED array area including a plurality of micro LED structures, wherein the plurality of micro LED structures includes a first group micro LED structures and a second group micro LED structures; a plurality of isolation contacts corresponding to the first group micro LED structures, one of the isolation contacts being formed at a bottom of each of first micro LED structure in the first group micro LED structures; and a plurality of conductive bottom contacts corresponding to the second group micro LED structures, one of the conductive bottom contacts being formed at a bottom of each of second micro LED structures in the second group micro LED structures.

The invention relates to a semiconductor component with a semiconductor chip and a radiation conversion element which is arranged on the semiconductor chip. The semiconductor chip has an active region which is designed to generate a primary radiation with a peak wavelength, the radiation conversion element has a quantum structure, the peak wavelength of the primary radiation lies in the infrared spectral range, and the quantum structure at least partly converts the primary radiation into a secondary radiation, wherein the emission wavelength of an emission maximum of the secondary radiation is greater than the peak wavelength. The invention additionally relates to a method for producing radiation conversion elements.

An epitaxial structure, a light emitting diode (LED), and a method of manufacturing the epitaxial structure are provided. The epitaxial structure includes a P-type semiconductor layer, a light emitting region, and a N-type semiconductor layer stacked in sequence. A thickness of the P-type semiconductor layer 110 is less than or equal to 1.0 m. By limiting the overall thickness of the P-type semiconductor layer, the internal stress and the internal stress distribution of each sublayer are optimized. Stress accumulation is effectively reduced, and structural defects of the light emitting diode caused by stress release during packaging and use are reduced or eliminated. The light emitting brightness of the light emitting diode is thereby improved, and the service life of the light emitting diode is prolonged.

A light emitting diode includes: a substrate of front and back main surfaces; a V-shaped groove, which has a reflecting surface, formed over front surface of the conductive substrate; a light-emitting epitaxial layer, the margin of which has its vertical projection between the bottom and the inner margin of the V-shaped groove, formed over the substrate, so that light emitted from the light-emitting epitaxial layer margin is incident to the mirror surface of the V-shaped groove and emits outwards. This structure can effectively improve extraction efficiency of device and control path of light at peripheral region of the light-emitting epitaxial layer.

A semiconductor junction may include a first layer and a second layer. The first layer may include a first semiconductor material and the second layer may be deposited on the first layer and may include a second material. The valence band maximum of the second material is higher than a conduction band minimum of the first semiconductor material, thereby allowing a flow of a majority of free carriers across the semiconductor junction between the first and second layers to be diffusive.