Embodiments generally relate to optoelectronic devices and more specifically, to textured layers in optoelectronic devices. In one embodiment, a method for providing a textured layer in an optoelectronic device includes depositing a first layer of a first material and depositing an island layer of a second material on the first layer. Depositing the island layer includes forming one or more islands of the second material to provide at least one textured surface of the island layer, where the textured surface is operative to cause scattering of light.

A semiconductor structure comprises an n-doped first layer, a p-doped second layer doped with a first dopant, and an active layer disposed between the n-doped first layer and the p-doped second layer and having at least one quantum well. The active layer of the semiconductor structure is divided into a plurality of first optically active regions, at least one second region, and at least one third region. Here, the plurality of first optically active regions are arranged in a hexagonal pattern spaced apart from each other. The at least one quantum well in the active region comprises a larger band gap in the at least one second region than in the plurality of first optically active regions and the at least one third region, the band gap being modified, in particular, by quantum well intermixing. The at least one second region encloses the plurality of first optically active regions.

A light emitting diode (LED) pixel array and method of fabrication thereof. A semiconductor wafer template includes a successively stacked first n-GaN layer, first MQW layer, p-GaN layer, and dielectric layer. A plurality of apertures is formed through the dielectric layer, extending to the p-GaN layer. A plurality of mesas is formed by forming, within each aperture, a second MQW layer and a second n-GaN layer above each second MQW layer. The second n-GaN layer and second MQW layer of each mesa form a respective mesa LED with the p-GaN layer. The first n-GaN layer and first MQW layer form a lower LED with the p-GaN layer.

In an embodiment a micro semiconductor LED structure includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, which is arranged on the first semiconductor layer, an active layer sequence including a first edge layer of the first conductivity type facing the first semiconductor layer and a second edge layer of the second conductivity type facing away from the first semiconductor layer and a third semiconductor layer of the second conductivity type, which is arranged at least on the active layer sequence, wherein the second semiconductor layer has at least one window, which penetrates through the second semiconductor layer from a side of the second semiconductor layer facing away from the first semiconductor layer toward the first semiconductor layer, wherein the first semiconductor layer has a recess in a region of the window, and wherein the active layer sequence is arranged at least in the recess.

Systems and devices describe an augmented-reality glasses having a plurality of panels of light emitters arranged to form an array of light emitters, collimation optics for collimating light received from the array of light emitters, an optical coupler for receiving the collimated light, and a waveguide for display of augmented-reality content to a wearer of the augmented-reality glasses. In some embodiments, the array of light emitters includes light emitters generating three colors, each panel of the plurality of panels of light emitters having light emitters generating a same color, and each panel of the plurality of panels of light emitters positioned on a surface of a semiconductor with at least one integrated circuit. The array of light emitters can be two-dimensional array of light emitters arranged on a common plane and characterized by a pitch that is less than 2 m.

A compact LED package has a segmented semiconductor structure that may emit light and at least two wavelength converting structures absorbing the emitted light to emit their own light. One of the wavelength converting structures may emit infrared (IR) or near-infrared (NIR) light, e.g., for IR sensing functions, while the other may emit visible light. The wavelength converting structures may be ceramic platelets coupled to each other. The segments of the semiconductor structure may be individually addressable, and the segmented semiconductor structure may allow for a reduction of package size compared to conventional LED packages.

A light-emitting element comprises a first semiconductor layer; a light-emitting layer on the first semiconductor layer; a second semiconductor layer on the light-emitting layer; a second electrode on the second semiconductor layer; and a first electrode on the first semiconductor layer, the first electrode spaced apart from the light-emitting layer and the second semiconductor layer, wherein the first semiconductor layer comprises one or more concave patterns between the first electrode and the second electrode.

Solid state transducer devices with independently controlled regions, and associated systems and methods are disclosed. A solid state transducer device in accordance with a particular embodiment includes a transducer structure having a first semiconductor material, a second semiconductor material and an active region between the first and second semiconductor materials, the active region including a continuous portion having a first region and a second region. A first contact is electrically connected to the first semiconductor material to direct a first electrical input to the first region along a first path, and a second contact electrically spaced apart from the first contact and connected to the first semiconductor material to direct a second electrical input to the second region along a second path different than the first path. A third electrical contact is electrically connected to the second semiconductor material.

A method of manufacturing an optoelectronic device, including the steps of: a) arranging an active photosensitive diode stack on a first substrate; b) transferring the active photosensitive diode stack onto an integrated control circuit previously formed inside and on top of a second semiconductor substrate, and then removing the first substrate; c) arranging an active light-emitting diode stack on a third substrate; and d) after steps b) and c), transferring the active light-emitting diode stack onto the active photosensitive diode stack, and then removing the third substrate.

Disclosed is a method of manufacturing a photoelectronic device having multiple wavelengths, the method including forming a plurality of photo-device layers having different emission wavelengths on a substrate, each photo-device layer including a first type semiconductor layer, an active layer, and a second type semiconductor layer from the substrate, forming a buffer layer between the photo-device layers, exposing the second type semiconductor layer to top of each photo-device layer, and opening the first type semiconductor layer on the bottom of each photo-device layer to form a plurality of photo-device portions having different emission wavelengths in a horizontal direction based on the substrate, forming a first electrode in one region on the opened first type semiconductor layer, and forming a second electrode on each photo-device portion.