A PET detector and method thereof are provided. The PET detector may include: a crystal array including a plurality of crystal elements arranged in an array and light-splitting structures set on surfaces of the plurality of crystal elements, the light-splitting structures jointly define a light output surface of the crystal array; a semiconductor sensor array, which is set in opposite to the light output surface of the crystal array and is suitable to receive photons from the light output surface, the semiconductor sensor array comprises a plurality of semiconductor sensors arranged in an array.

The disclosure is directed at a method and apparatus for producing a detector element. The detector element includes first and second electrodes located on opposites sides of a semiconductor layer. The first and second electrodes are staggered with respect to each other in a plane perpendicular to the semiconductor layer.

A semiconductor light detection element includes a plurality of avalanche photodiodes operating in Geiger mode and formed in a semiconductor substrate, quenching resistors connected in series to the respective avalanche photodiodes and arranged on a first principal surface side of the semiconductor substrate, and a plurality of through-hole electrodes electrically connected to the quenching resistors and formed so as to penetrate the semiconductor substrate from the first principal surface side to a second principal surface side. A mounting substrate includes a plurality of electrodes arranged corresponding to the respective through-hole electrodes on a third principal surface side. The through-hole electrodes and the electrodes are electrically connected through bump electrodes, and a side surface of the semiconductor substrate and a side surface of a glass substrate are flush with each other.

According to an embodiment, a detector pack comprises a first substrate and a second substrate. the first substrate includes a first surface and a second surface. the first substrate is provided with an X-ray detecting element in the first surface. the second substrate includes a third surface and a fourth surface. The second substrate is disposed in the second surface to face the third surface. The second substrate is provided with a data acquisition circuit in the third surface. The first substrate and the second substrate are formed as a stacked body. The data acquisition circuit is provided in the third surface not to come in contact with the second surface of the first substrate.

A photon detector having an optical transparent plate and photodiode array interconnected by an optical light guide array. The optical light guide array including elements providing a transmission line between the optical transparent plate and the photodiode array, where the position of one or more optical light guide elements is formed to adjust for a miss-registered photodiode individual element. A method for assembling the photon detector includes depositing a non-wetting film on opposing surfaces of the optical transparent plate and/or photodiode array, altering the deposited non-wetting film in regions of individual photodiode elements, dispensing an optical coupler adhesive on the optical transparent plate and photodiode array to form adhesive beads, aligning the opposing surfaces, assembling the opposing surfaces so that the corresponding optical coupler adhesive beads contact each other, and curing the optical coupler adhesive to form a structurally merged photon detector having optical light guide elements.

An image pickup panel (1) includes: photodetection sections (10) each including a photodetector (11-1) and a receiver (11-2) which are integrally molded and having solder bumps (12) formed thereon, the photodetector converting received light into a current signal, the receiver converting the current signal into a voltage signal; and a wiring layer (20) including a wiring pattern installed therein and allowing the photodetection sections to be mounted thereon for respective pixels by the solder bumps, the wiring pattern being connected to the photodetection sections.

With an image sensor in which the amplifier circuit is disposed at each pixel, there is such an issue that the threshold voltage of the transistor fluctuates so that the signal voltage fluctuates because a voltage is continuously applied between the source and the gate of the transistor at all times when using the amorphous thin film semiconductor as the transistor that constitutes an amplifier circuit. The gate-source potential of the TFT that constitutes the amplifier circuit is controlled so that the gate terminal voltage becomes smaller than the source terminal voltage in an integrating period where the pixels accumulate the signals, and controlled so that the gate terminal voltage becomes larger than the source terminal voltage in a readout period where the pixels output the signals.

A radiation imaging apparatus includes a first control line electrically connected to a control electrode of an imaging switching element, a second control line electrically connected to a control electrode of a detection switching element, a signal line electrically connected to a main electrode of the detection switching element, a capacitance line arranged to be capacitively coupled with the signal line, wherein the capacitance line is different from the first control line and the second control line, a driving unit electrically connected to the second control line and the capacitance line and configured to apply a voltage to the detection switching element and the capacitance line, and a control unit configured to control the driving unit to apply, in a case where an on-state or off-state voltage is applied to the detection switching element, a voltage having an opposite polarity to that of the voltage to the capacitance line.

In a photoelectric changing unit, a photoelectric conversion unit converts light into electric charge, and an electric charge accumulation unit accumulates the electric charge in a polygonal area whose plurality of sides are adjacent to the photoelectric conversion unit on a light receiving surface. A voltage generation unit accumulates the electric charge and generates a voltage according to an amount of the accumulated electric charge. A first transfer unit transfers the electric charge from the photoelectric conversion unit to the electric charge accumulation unit when an instruction on a transfer to the electric charge accumulation unit is issued. A second transfer unit transfers the electric charge from the electric charge accumulation unit to the voltage generation unit when an instruction on a transfer to the voltage generation unit is issued.

A solid state photomultiplier includes at least one microcell configured to generate an initial analog signal when exposed to optical photons. The solid state photomultiplier further includes a quench circuit electrically coupled with the at least one microcell. The quench circuit includes at least one quench resistor configured to exhibit a substantially constant temperature coefficient of resistance over a selected temperature range.