Provided herein is a digital x-ray detector and a method for repairing a bad pixel thereof, the detector including a substrate; a gate line and a data line formed on the substrate such that the gate line and the data line intersect each other to form a pixel domain; a thin film transistor formed within the pixel domain such that the thin film transistor is adjacent to a portion where the gate line and the data line intersect each other, the thin film transistor including a gate electrode, an active layer, a source electrode and a drain electrode; a PIN diode which is formed within the pixel domain and which includes a lower electrode connected to the source electrode of the thin film transistor, a PIN layer formed on the lower electrode, and an upper electrode formed on the PIN layer; a bias line connected to the upper electrode of the PIN diode; and a scintillator arranged above the PIN diode, wherein on at least one of a surface of the drain electrode which faces the PIN diode and a surface of the PIN diode which faces the drain electrode, a groove is formed such that it expands a distance between the drain electrode and the PIN diode.

A PET detector and method thereof are provided. The PET detector may include: a crystal array including a plurality of crystal elements arranged in an array and light-splitting structures set on surfaces of the plurality of crystal elements, the light-splitting structures jointly define a light output surface of the crystal array; a semiconductor sensor array, which is set in opposite to the light output surface of the crystal array and is suitable to receive photons from the light output surface, the semiconductor sensor array comprises a plurality of semiconductor sensors arranged in an array.

The present invention provides a scintillator panel including: a plate-like substrate; a barrier rib provided on the substrate; and a scintillator layer including a phosphor filled in cells divided by the barrier rib, wherein the barrier rib is formed of a material which is mainly composed of a low-melting-point glass containing 2 to 20% by mass of an alkali metal oxide, a value obtained by dividing a top width Lt of the barrier rib or a 90%-height width L90 of the barrier rib by a half-value width Lh of the barrier rib is 0.45 to 1, and a value obtained by dividing a bottom width Lb of the barrier rib or a 10%-height width L10 of the barrier rib by the half-value width Lh is 1 to 3.

A photodetector according to an embodiment includes; at least one photodiode including: a first electrode; an n-type semiconductor layer disposed on the first electrode; a first p-type semiconductor layer disposed above the n-type semiconductor layer, the first p-type semiconductor layer including a first surface region and a second surface region; a second p-type semiconductor layer disposed in the first surface region of the first p-type semiconductor layer, the second p-type semiconductor layer having a higher p-type impurity concentration than the first p-type semiconductor layer; and a second electrode disposed on the second surface region of the first p-type semiconductor layer and on the second p-type semiconductor layer.

An aim of the present invention is to provide a technology to inhibit degradation phenomena of TFTs in an imaging panel having such TFTs in each pixel. The imaging panel captures scintillation light, which are X-rays that have passed through a specimen and been converted by a scintillator. The imaging panel includes a plurality of gate lines and a plurality of data lines. The imaging panel includes a conversion element that converts scintillation light to electric charge, a thin film transistor connected to the gate line, data line, and conversion element, and a metal wiring line connecting to the conversion element and supplying a bias voltage to the conversion element. The metal wiring line is positioned approximately parallel to the data line so as to overlap the top of the thin film transistor.

An aim of the present invention is to provide a technology that increases the aperture ratio of an imaging panel. The imaging panel captures scintillation light, which are X-rays that have passed through a specimen and been converted by a scintillator. The imaging panel includes a plurality of gate lines and a plurality of data lines. The imaging panel includes, in each of the pixels, a conversion element that converts scintillation light to electric charge, a thin film transistor connected to the gate line, data line, and conversion element, and a metal wiring line connecting to the conversion element and supplying a bias voltage to the conversion element. The metal wiring line is positioned generally parallel to the data line and is closer to the data line that connects to the thin film transistor than approximately the center in the extension direction of the gate line of the conversion element.

An MN array of sensor tiles are attached to a substrate using a compliant layer that includes an adhesive. A thickness of the compliant layer varies depending on a thickness of the sensor tiles so that outward facing sides of the sensor tiles are substantially aligned.

The present invention aims at inhibiting the occurrence of thinning or disconnecting of the bias wiring line in an imaging panel and X-ray imaging device, thereby inhibiting signal delays, signal transmission defects, and the like. A second contact hole electrically connecting an electrode of a photodiode to a bias wiring line penetrates a second interlayer insulating film and photosensitive resin layer. In the second contact hole, an area of a region where the photosensitive resin layer opens is smaller than an area of a region where the second interlayer insulating film opens.

An aim of the present invention is to make it possible to achieve stable operation of thin film transistors in an imaging panel of an X-ray imaging system that uses an indirect conversion scheme. An imaging panel includes a substrate, thin film transistor, photoelectric conversion element, and bias wiring line. The thin film transistor is formed on the substrate. The photoelectric conversion element is connected to the thin film transistor and irradiated by scintillation light. The bias wiring line is connected to the photoelectric conversion element and applies a reverse bias voltage to the photoelectric conversion element. The thin film transistor includes a semiconductor active layer and a gate electrode. The gate electrode is formed between the substrate and semiconductor active layer. The bias wiring line includes a portion that overlaps the gate electrode and semiconductor active layer as seen from the radiation direction of the scintillation light.

An apparatus includes a plurality of first groups having same configurations and arranged in a row direction and a column direction, each of the first groups including a plurality of pixels for obtaining a radiation image and at least one detection section for detecting an amount of incident radiation, and a plurality of detection signal lines connected to the plurality of detection sections. Two of the plurality of first groups which are arranged in the column direction are shifted from each other in the row direction, and the detection sections included in the two groups are connected to different detection signal lines in the plurality of detection signal lines.