A sensing substrate and an electronic device are provided. The sensing substrate includes a sensing unit on a base substrate. The sensing unit includes a sensing element and a conductive pattern, the sensing element has a light incident surface and a back surface that are opposite and a side surface between the light incident surface and the back surface. The conductive pattern is on a side of the sensing element away from the base substrate, and has a hollow portion and a transparent conductive portion surrounding the hollow portion, an orthographic projection of the hollow portion on the base substrate is at least partially within an orthographic projection of the sensing element on the base substrate, and an orthographic projection of the transparent conductive portion on the base substrate at least partially overlaps with an orthographic projection of the side surface of the sensing element on the base substrate.

The image quality and useful life of an x-ray imaging detector is enhanced by adding a shield layer between the photodiode/thin film transistor (TFT) array and the cesium iodide (CsI)-based scintillator/scintillator layer. The shield layer prevents dynamic charge coupling between a CsI/parylene layer located above the shield layer and the conductive data transfer lines located below the shield layer and operably connected to the individual pixels of the photodiode/TFT array to effectively maintain the level of various image quality parameters over time, including the modulation transfer function (MTF), and the Signal to Noise Ratio (SNR).

In a manufacturing method of a photoelectric conversion panel, a contact hole CH3 that exposes a part of an upper face of a photodiode and a contact hole CH2 that exposes a source connection electrode are formed in a first flattening film and in inorganic insulating films 105a to 105c, an inorganic insulating film 107 is formed, contact holes CH2a and CH3a are formed in the contact holes CH2 and CH3, respectively, and a bias line and a data line are formed in the contact holes CH2a and CH3a, respectively.

An aim of the present invention is to improve the conversion efficiency of scintillation light into electric charge by a photoelectric conversion element in an imaging panel of an X-ray imaging system using an indirection conversion scheme. An imaging panel generates images based on scintillation light acquired from X-rays that have passed through a specimen. The imaging panel includes a substrate, thin film transistor, photoelectric conversion element, and reflective layer. The thin film transistor is formed on the substrate. The photoelectric conversion element is connected to the thin film transistor and converts incident scintillation light into electric charge. The entirety of a region of a light-receiving surface of the photoelectric conversion element where the scintillation light is incident overlaps the reflective layer as seen from the incident direction of the scintillation light. The reflective layer may be the drain electrode. Alternatively, the reflective layer may be a reflective electrode that is formed in the same layer as a gate electrode.

To improve a temporal resolution.

An image-capturing device includes a pixel array unit and a control unit. The pixel array unit includes a plurality of pixels classified into two or more groups, wherein pixels which belong to a same group are driven at a same timing. The control unit controls driving of the pixel array unit so that a number of groups in a period of time of read-out of electrical charge is a same number in any given timing in image-capturing operation, and that a number of groups in a period of time of exposure and accumulation of electrical charge is a same number in any given timing in the image-capturing operation.

An X-ray image pickup system (10) includes an X-ray source (16), an image pickup panel (12), a scintillator (13), and an X-ray control unit (14E). The image pickup panel includes a photoelectric conversion element (26), a capacitor (50), a thin film transistor (24), and TFT control units (14A, 14B, 14F). To the photoelectric conversion element (26), scintillation light is projected. The capacitor (50) is connected to the photoelectric conversion element (26), and accumulates charges. The thin film transistor (24) is connected to the capacitor (50). The TFT control units (14A, 14B, 14F) control an operation of the thin film transistor (24). The thin film transistor (24) includes a semiconductor active layer (32) made of an oxide semiconductor. The X-ray control unit (14E) intermittently projects X-ray to the X-ray source (16). The TFT control units (14A, 14B, 14F) cause the thin film transistor (24) to operate when the X-ray is not projected, so as to read out the charges accumulated in the capacitor (50).

A second insulating film is disposed so as to cover a conversion element that includes a first insulating film, photodiode, and electrode. The second insulating film is made of a SiN.sub.xO.sub.y material, where x is greater than 0 and y is greater than or equal to 0. This makes it possible to provide a TFT and photodiode with excellent anti-moisture characteristics.

An image pickup panel (1) includes: photodetection sections (10) each including a photodetector (11-1) and a receiver (11-2) which are integrally molded and having solder bumps (12) formed thereon, the photodetector converting received light into a current signal, the receiver converting the current signal into a voltage signal; and a wiring layer (20) including a wiring pattern installed therein and allowing the photodetection sections to be mounted thereon for respective pixels by the solder bumps, the wiring pattern being connected to the photodetection sections.

A photo detector and a method for fabricating the same are provided. The photo detector includes a first substrate and a photo conversion element. The first substrate has a sensor element array for receiving a light with a spectrum in a specific wavelength range. The photo conversion element is disposed on the sensor element array, where the photo conversion element includes a photo conversion material layer and a doped photo conversion material column structure layer. A luminescent spectrum of the doped photo conversion material layer column structure layer is overlapped with the spectrum in a specific wavelength range, and a luminescent spectrum of the photo conversion material layer is non-overlapped with the spectrum in a specific wavelength range.

Provided is a technique that reduces patterning defects of data lines in an imaging panel and drain electrodes in thin film transistors without lowering the aperture ratio of the imaging panel. The imaging panel captures scintillation light, which are X-rays that have passed through a specimen and been converted by a scintillator. The imaging panel includes a plurality of gate lines 11 and a plurality of data lines 12. The imaging panel includes, in each of the pixels 13, a conversion element 15 that converts scintillation light to electric charge, and a thin film transistor 14 connected to the gate line 11, data line 12, and conversion element 15. A drain electrode 144 of the thin film transistor 14 is formed such that edges 144E1 and 144E2 of the drain electrode 144 near the data line 12 are more inside the pixel 13 than edges 15E1 and 15E2 of the conversion element 15 near the data line 12.