The present invention provides an X-ray detector and a manufacturing method thereof, the manufacturing method comprising: forming an X-ray to visible light converting layer, under which a photoelectric converting layer and a signal processing layer are provided in sequence; providing a soft insulating material on the X-ray to visible light converting layer to form a protective layer; and forming a bendable grid layer on the protective layer.

An imaging system may include an image sensor having an array of image pixels with a photosensitive region that generates image signals in response to light. The array may include photoluminescent material that absorbs light of a first range of wavelengths and emits light of a second range of wavelengths onto the photosensitive region. The first range of wavelengths may correspond to ultraviolet light, and the second range of wavelengths may correspond to visible light. The photoluminescent material may be formed over some or all of the image pixels. The array may include color filter elements that transmit light of a given color to the photosensitive region. The photoluminescent material may be adjusted to have a peak emission intensity at a color of light that corresponds to the given color of light transmitted by a given color filter element.

A solid-state radiation detector comprising a photosensitive sensor comprises photosensitive elements that are organized in a matrix, and a light generator whose purpose is to optically wipe the photosensitive elements. The light generator comprises: an electroluminescent layer that is distributed over the surface of the sensor; at least one electrode that continuously covers the electroluminescent layer and in which electrons may flow, the light emitted by the electroluminescent layer being capable of passing through the electrode; and additional electrical conductors that are in electrical contact with the electrode, the additional electrical conductors forming branches that extend over the surface of the electrode, and being spatially distributed across the surface of the electrode.

Provided herein is a digital x-ray detector and a method for repairing a bad pixel thereof, the detector including a substrate; a gate line and a data line formed on the substrate such that the gate line and the data line intersect each other to form a pixel domain; a thin film transistor formed within the pixel domain such that the thin film transistor is adjacent to a portion where the gate line and the data line intersect each other, the thin film transistor including a gate electrode, an active layer, a source electrode and a drain electrode; a PIN diode which is formed within the pixel domain and which includes a lower electrode connected to the source electrode of the thin film transistor, a PIN layer formed on the lower electrode, and an upper electrode formed on the PIN layer; a bias line connected to the upper electrode of the PIN diode; and a scintillator arranged above the PIN diode, wherein on at least one of a surface of the drain electrode which faces the PIN diode and a surface of the PIN diode which faces the drain electrode, a groove is formed such that it expands a distance between the drain electrode and the PIN diode.

A photoelectric conversion device has a pixel area including an effective pixel row and a reference pixel row, the reference pixel row containing a plurality of reference pixel pairs, each pair composed of a first reference pixel and a second reference pixel arranged adjacent to each other. The first and second reference pixels output reference signals having different signal levels and independent of the quantity of incident light.

A radiographic image detector includes a phosphor layer, a heat shield layer, and a photoelectric converter in this order, wherein the heat shield layer has a thickness T (m) and a thermal conductivity C (W/m.Math.K) satisfying that C/T is from 0.004 to 5.

An imaging device that has a structure where a transistor is used in common by a plurality of pixels and is capable of imaging with a global shutter system is provided. A transistor that resets the potential of a charge detection portion, a transistor that outputs a signal corresponding to the potential of the charge detection portion, and a transistor that selects a pixel are used in common by the plurality of pixels. A transistor is provided between a power supply line and a photoelectric conversion element. Exposure is performed by turning on the transistor. Imaging data is retained in a charge retention portion by turning off the transistor.

A light detection device includes: a TFT having a semiconductor layer supported on a substrate, a source electrode, a drain electrode, and a gate electrode; a photodiode having a bottom electrode electrically connected to the drain electrode, a semiconductor laminate structure, and a top electrode; and an electrode made of the same conductive film as the bottom electrode and arranged on the semiconductor layer with an insulating layer interposed therebetween.

The method of wafer-scale integration of semiconductor devices comprises the steps of providing a semiconductor wafer (1), a further semiconductor wafer (2), which differs from the first semiconductor wafer in at least one of diameter, thickness and semiconductor material, and a handling wafer (3), arranging the further semiconductor wafer on the handling wafer, and bonding the further semiconductor wafer to the semiconductor wafer. The semiconductor device may comprise an electrically conductive contact layer (6) arranged on the further semiconductor wafer (2) and a metal layer connecting the contact layer with an integrated circuit.

A crystal-array module includes a number of unit crystal strips. The three-dimensional shape of the crystal-array module is a frustum or a combination of a right quadrangular prism and the frustum. The frustrum includes a first bottom face coupled with a photoelectric device and a first top face opposed to the first bottom face. The area of the first bottom face is smaller than that of the first top face. A fabrication method of the crystal-array module includes joining cut unit crystal strips or cut unit crystal strip arrays together.