A photoelectric conversion panel includes multiple thin-film transistors (TFTs) formed on an substrate, photodiodes respectively connected to the TFTs, and a metal layer formed on a light incident side of the photodiodes. The metal layer is formed in a position to overlap a subset of the photodiodes in a plan view.

A sensor board comprising a substrate comprising a pixel region where pixels are arranged on a first surface of two surfaces, a scintillator arranged on one of the first surface and a second surface of the two surfaces and a light shielding member arranged on the surface on which the scintillator is arranged, is provided. The pixel region comprises a first region where a signal for radiation image is generated and a second region where a signal for correcting a signal output from the first region is generated. The scintillator is arranged to overlap the first region but not to overlap the second region. The light shielding member is arranged to cover the scintillator and overlap the second region. A portion of the light shielding member overlapping the second region is bonded to the surface on which the scintillator is arranged.

A method of manufacturing a radiographic imaging apparatus includes providing a flexible base material on a support body and forming a sensor substrate in which a plurality of pixels for accumulating electric charges generated depending on light converted from radiation is provided; forming a conversion layer that converts the radiation into light on a fixing plate; providing the conversion layer in a state in which a surface of the conversion layer opposite to the fixing plate is made to face a first surface of the base material provided with the pixels; fixing one end of the flexible cable to the sensor substrate; fixing the flexible cable to the fixing plate; and peeling the sensor substrate provided with the conversion layer and the fixing plate from the support body.

A radiation detector includes a sensor panel having a light receiving surface, a first scintillator panel and a second scintillator panel disposed on the light receiving surface in a state of being adjacent to each other along the light receiving surface, and an adhesive layer. The first scintillator panel has a first substrate and a first scintillator layer including a plurality of columnar crystals. The second scintillator panel has a second substrate and a second scintillator layer including a plurality of columnar crystals. The first scintillator layer reaches at least a first portion of the first substrate. The second scintillator layer reaches at least a second portion of the second substrate. The adhesive layer is separated for each of the first scintillator panel and the second scintillator panel.

An MN array of sensor tiles are attached to a substrate using a compliant film that includes an adhesive. A thickness of the compliant film varies depending on a thickness of the sensor tiles so that outward facing sides of the sensor tiles are coplanar.

Embodiments of a solid state photomultiplier are provided herein. In some embodiments, a solid state photomultiplier may include a microcell configured to generate an analog signal when exposed to optical photons, a quench resistor electrically coupled to the microcell in series; and a first switch disposed between the quench resistor and an output of the solid state photomultiplier, the first switch electrically coupled to the microcell via the quench resistor and configured to selectively couple the microcell to the output.

A radiation sensor including a scintillation layer configured to emit photons upon interaction with ionizing radiation and a photodetector including in order a first electrode, a photosensitive layer, and a photon-transmissive second electrode disposed in proximity to the scintillation layer. The photosensitive layer is configured to generate electron-hole pairs upon interaction with a part of the photons. The radiation sensor includes pixel circuitry electrically connected to the first electrode and configured to measure an imaging signal indicative of the electron-hole pairs generated in the photosensitive layer and a planarization layer disposed on the pixel circuitry between the first electrode and the pixel circuitry such that the first electrode is above a plane including the pixel circuitry. A surface of at least one of the first electrode and the second electrode at least partially overlaps the pixel circuitry and has a surface inflection above features of the pixel circuitry. The surface inflection has a radius of curvature greater than one half micron.

A PET detector and method thereof are provided. The PET detector may include: a crystal array including a plurality of crystal elements arranged in an array and light-splitting structures set on surfaces of the plurality of crystal elements, the light-splitting structures jointly define a light output surface of the crystal array; a semiconductor sensor array, which is set in opposite to the light output surface of the crystal array and is suitable to receive photons from the light output surface, the semiconductor sensor array comprises a plurality of semiconductor sensors arranged in an array.

An electronic device includes a substrate, a silicon semiconductor disposed on the substrate, an oxide semiconductor disposed on the substrate, a sensor configured to receive a light and output a signal, and a light-shielding element including a conductive material and disposed between the sensor and the oxide semiconductor. The oxide semiconductor is electrically connected to the silicon semiconductor. The silicon semiconductor and the oxide semiconductor are active corresponding to the signal.

A photodiode and a method of manufacturing the same, and an X-ray detector and a method of manufacturing the same are provided. The PIN photodiode includes a first doped layer, a second doped layer and an intrinsic layer between the first and second doped layers, the first doped layer is provided on a source/drain electrode layer of a thin film transistor of the X-ray detector. A heavily-doped region is provided in the second doped layer, has a dosage concentration larger than that of the second doped layer, and is electrically connected with a cathode of the PIN photodiode.