A light emitting diode includes an n-type nitride semiconductor layer, a V-pit generation layer disposed on the n-type nitride semiconductor layer and having V-pits, an active layer disposed on the V-pit generation layer and including a first well region formed along a flat surface of the V-pit generation layer and a second well region formed in the V-pit of the V-pit generation layer, a p-type nitride semiconductor layer disposed on the active layer and a sub-emission layer interposed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer and disposed near the active layer. The sub-emission layer may emit light having a peak wavelength within a range of wavelengths shorter than a peak wavelength of the first well region, and light emitted from the light emitting diode is within a range of 0.205X0.495 and 0.265Y0.450 in CIE color coordinates (X, Y).

An epitaxial structure includes a first epitaxial layer, a second epitaxial layer, and an interface treatment layer. The second epitaxial layer is disposed on the first epitaxial layer. The interface treatment layer is located between the first epitaxial layer and the second epitaxial layer and is in contact with the first epitaxial layer and the second epitaxial layer. The first epitaxial layer, the second epitaxial layer, and the interface treatment layer include the same material. An image contrast ratio of a transmission electron microscope (TEM) of the interface treatment layer to the first epitaxial layer and an image contrast ratio of a TEM of the interface treatment layer to the second epitaxial layer are both greater than 1.005. A method for forming an epitaxial structure is also provided.

A light-emitting element includes: a first light-emitting portion includes, in order upward from a lower side, a first n-side layer, a first active layer, and a first p-side layer disposed, each made of a nitride semiconductor; an intermediate layer disposed over the first light-emitting portion and made of a nitride semiconductor including an n-type impurity; and a second light-emitting portion disposed over the intermediate layer and comprising, in order upward from a lower side, a second n-side layer, a second active layer, and a second p-side layer, each made of a nitride semiconductor. An n-type impurity concentration in the intermediate layer is greater than an n-type impurity concentration in the first n-side layer. The first p-side layer includes: a first layer including aluminum and gallium, and a second layer disposed above the first layer, including aluminum and gallium.

A light emitting element comprises a semiconductor structure which includes an n-side layer, a p-side layer, and an ultraviolet light emitting active layer positioned between the n-side layer and the p-side layer, each being made of a nitride semiconductor, an n-electrode electrically connected to the n-side layer, and a p-electrode electrically connected to the p-side layer. The active layer has a well layer containing Al, a barrier layer containing Al, and holes defined by the lateral faces of the well layer and the lateral faces of the barrier layer. The p-side layer has a first layer containing Al, a second layer containing Al disposed on the first layer and in contact with the lateral faces of the well layer, and a third layer disposed on the second layer. The third layer is smaller in thickness than the first layer.

A micro light emitting device of the disclosure includes an epitaxial structure, a first type electrode, and a second type electrode. The epitaxial structure includes a quantum well structure, a first type semiconductor layer, a second type semiconductor layer and at least one V-shaped defect in the quantum well structure. The quantum well structure has an upper surface and a lower surface opposite to each other and includes at least one quantum well layer and at least one quantum barrier layer stacked alternately. The quantum well layer includes at least one patterned layer, and the patterned layer includes multiple geometric patterns. The first type semiconductor layer is disposed on the lower surface of the quantum well structure. The second type semiconductor layer is disposed on the upper surface of the quantum well structure.

A method of manufacturing a light emitting element includes: forming a first n-type semiconductor layer containing an n-type impurity; forming, on the first n-type semiconductor layer, a first superlattice layer, which is grown at a first growth temperature; forming, on the first superlattice layer, a first light emitting layer; forming, on the first light emitting layer, a first p-type semiconductor layer containing a p-type impurity; forming, on the first p-type semiconductor layer, a tunnel junction part; forming, on the tunnel junction part, a second n-type semiconductor layer containing an n-type impurity; forming, on the second n-type semiconductor layer, a second superlattice layer, which is grown at a second growth temperature lower than the first growth temperature; forming, on the second superlattice layer, a second light emitting layer; and forming, on the second light emitting layer, a second p-type semiconductor layer containing a p-type impurity.

A nitride semiconductor light emitting element includes: an n-side nitride semiconductor layer; a p-side nitride semiconductor layer; and an active layer disposed between the n-side nitride semiconductor layer and the p-side nitride semiconductor layer and comprising a plurality of stacks, each comprising a well layer and a barrier layer. The well layers include, successively from the n-side nitride semiconductor layer side, a first well layer, a second well layer, and a third well layer that is positioned closest to the p-side nitride semiconductor layer among the well layers. A thickness of the second well layer is greater than a thickness of the first well layer. A thickness of the third well layer is greater than the thickness of the second well layer. Among the barrier layers, the first barrier layer, which is positioned between the third well layer and the p-side nitride semiconductor layer, is doped with a p-type impurity.

A light-emitting element includes: a semiconductor structure including: an n-side semiconductor layer including an n-type nitride semiconductor layer; a p-side semiconductor layer including a p-type nitride semiconductor layer; and an active layer disposed between the n-side semiconductor layer and the p-side semiconductor, the active layer including a well layer made of a nitride semiconductor. The p-side semiconductor layer includes, in order from an active layer side, a first layer including Ga, Al, In, and N, a second layer containing Ga, Al, and N, and a third layer including Ga and N, the second layer being thinner than the first layer. A bandgap energy of the second layer is larger than a bandgap energy of the well layer. A p-type impurity concentration of the third layer is higher than a p-type impurity concentration of the first layer. A composition ratio of Al in the second layer is higher than a composition ratio of Al in the first layer.

A light emitting diode and a light emitting module having the same are disclosed. A light emitting diode according to an embodiment of the present disclosure includes a first conductivity type semiconductor region including a first dopant, a light emitting region including a barrier layer and a well layer, a second conductivity type semiconductor region including a second dopant, and an approach region disposed between the first conductivity type semiconductor region and the second conductivity type semiconductor region, in which a profile of the second dopant extends from the second conductivity type semiconductor region to the approach region, and at least a portion of the approach region is overlapped with the light emitting region.

A display device includes a first electrode and a second electrode that are disposed on a substrate, a light emitting element disposed on the first electrode and the second electrode, a first contact electrode electrically connecting the first electrode and the light emitting element to each other, and a second contact electrode electrically connecting the second electrode and the light emitting element to each other. The light emitting element includes a first semiconductor layer including a semiconductor of a first type, a second semiconductor layer including a semiconductor of a second type, and an active layer disposed between the first semiconductor layer and the second semiconductor layer. The first semiconductor layer includes a doped semiconductor layer including a porous structure.