A light emitting apparatus is disclosed. The light emitting apparatus includes a light-transmissive substrate having a top surface and a bottom surface, at least one semiconductor light emitting device disposed on the top surface of the light-transmissive substrate, a reflective part disposed over the semiconductor light emitting device to reflect light from the semiconductor light emitting device toward the light-transmissive substrate, and a first wavelength converter disposed between the light-transmissive substrate and the reflective part.

A thin film transistor includes: a gate electrode; a gate insulating layer above the gate electrode; an oxide semiconductor layer disposed above the gate insulating layer; and a source electrode and a drain electrode disposed above the oxide semiconductor layer and electrically connected to the oxide semiconductor layer, wherein metallic elements included in the oxide semiconductor layer include at least indium (In), fluorine is included in a region which is an internal region in the oxide semiconductor layer and is close to the gate insulating layer, and a fluorine concentration of the region close to the gate insulating layer in the oxide semiconductor layer is higher than a fluorine of a contact region for the source electrode or the drain electrode in the oxide semiconductor layer.

A light emitting device includes a light emitting device on a substrate; an encapsulation layer covering the light emitting device; and a texture layer on the encapsulation layer. A surface of the texture layer has a ridge structure. A radial cross section of the ridge structure has a triangular shape with a distal vertex relative to the encapsulation layer surface. The distal vertex has one or more altitude angles, and the one or more altitude angles are less than or equal to 40 degrees.

A method of manufacturing a layer containing quantum dots, the layer including first regions where the quantum dots are active and second regions where the quantum dots are inactive, the method including: a) depositing on a support a first layer of a matrix containing quantum dots; b) depositing on the first layer a second resist layer; c) exposing the second layer to light through a mask delimiting the first and second regions, and then developing the resin of the second layer to remove the resin of the second layer opposite the second regions while keeping it opposite the first regions; and d) removing the resin of the second layer opposite the first regions without removing the first layer.

A semiconductor light emitting device package is provided and includes a light emitting diode (LED) chip including a first electrode and a second electrode, the LED chip having a first surface on which the first electrode and the second electrode are disposed, and a second surface opposing the first surface; a dam structure disposed on the first surface, an outside edge of the dam structure being co-planar with an outside edge of the LED chip; and a wavelength conversion layer disposed on side surfaces of the LED chip, the second surface of the LED chip, and a surface of the dam structure, the wavelength conversion layer containing a wavelength conversion material.

Provided is a light emitting device having a phosphor layer on a surface of a semiconductor light emitting element and reducing unevenness in light distribution color, and a method of manufacturing the same. A light emitting device 100 includes a light emitting element 20 with a supporting body which is composed of a semiconductor light emitting element 1 and a supporting body 10, and a phosphor layer 7 which continuously covers an upper surface and side surfaces of the semiconductor light emitting element 1, and side surfaces of the supporting body 10. The phosphor layer 7 is configured such that at least a lower portion of the side surface of the supporting body 10 is thinner than the upper surface and the side surface of the semiconductor light emitting element 1. Such a configuration of the phosphor layer can be formed by applying a spray-coating of a slurry containing phosphor particles and a thermosetting resin in a solvent on the semiconductor light emitting element 1 side of the light emitting element 20 which has the supporting body.

A light emitting device (100) according to the present disclosure includes a base substrate (10) having a recessed portion (15) at its upper surface (11); a light emitting element (20) provided in the recessed portion (15); and a sealing member (30) provided in the recessed portion (15), in which the sealing member (30) contains surface-treated particles (40), or particles (40) coexisting with a dispersing agent, and at least a part of an edge portion of the sealing member (30) is a region located in the vicinity of an edge (17) of the recessed portion, and in which at least one of the particles (40) and aggregates (41) of particles are unevenly distributed.

A package structure is provided, which includes: a light emitting element having a first surface, a second surface opposite to the first surface, and a side surface adjacent to and connected with the first surface and the second surface; a fluorescent layer covering the first surface and the side surface of the light emitting element; a transparent layer covering the fluorescent layer with an inclined surface formed at an outer side of the transparent layer; and a reflective layer formed on the inclined surface and covering an outer side of the fluorescent layer. Therefore, light can be prevented from leakage from the outer side of the fluorescent layer. A method for fabricating the package structure is also provided.

Solid-state radiation transducer (SSRT) devices and methods of manufacturing and using SSRT devices are disclosed herein. One embodiment of the SSRT device includes a radiation transducer (e.g., a light-emitting diode) and a transmissive support assembly including a transmissive support member, such as a transmissive support member including a converter material. A lead can be positioned at a back side of the transmissive support member. The radiation transducer can be flip-chip mounted to the transmissive support assembly. For example, a solder connection can be present between a contact of the radiation transducer and the lead of the transmissive support assembly.

A light emitting device package includes a package body, first and second lead frames located on the package body, a light source mounted on at least one of the first or second lead frames, a lens located on the package body, and a wavelength conversion unit partially located on the package body between the package body and the lens.