Some embodiments include an imaging system comprising a detector substrate, at least one detector circuit comprising a capacitor coupled with the detector substrate, the capacitor arranged to collect an electrical charge from the detector substrate, and the imaging system further comprises at least one programmable current source, arranged to provide a neutralizing charge to the capacitor, and the imaging system is configured to select a value for the neutralizing charge in dependence of a frame number.

A thin-film transistor to be used for a radiation sensor is disclosed. The thin-film transistor includes a gate electrode, an oxide semiconductor layer, and a gate insulating film located between the oxide semiconductor layer and the gate electrode. The gate insulating film includes a silicon nitride layer, and a silicon oxide layer located between the silicon nitride layer and the oxide semiconductor layer and having interfaces with the silicon nitride layer and the oxide semiconductor layer. The silicon oxide layer has a thickness not less than 1 nm and not more than 4 nm.

For example, a radiation detector may include a bonded die including a plurality of active pixel sensors configured to sense ionizing radiation. For example, the bonded die may include a detection die including a plurality of detection diodes. For example, an active pixel sensor of the plurality of active pixel sensors may include a detection diode of the plurality of detection diodes to generate an electric detection signal based on detected ionized radiation detected by the detection diode. For example, the bonded die may include an electronic-circuitry die bonded to the detection die. For example, a thickness of the electronic-circuitry die may be less than 4 percent of a thickness of the detection die. For example, the electronic-circuitry die may include a plurality of transistors. For example, the active pixel sensor may include one or more transistors of the plurality of transistors to amplify the electronic detection signal.

A light-receiving element according to an embodiment of the present disclosure includes: a semiconductor substrate (11) including a photoelectric conversion region; a first electrically-conductive region (13A) provided at an interface of one surface of the semiconductor substrate (11) and coupled to a first electrode (16); a second first electrically-conductive region (13B) provided at the interface of the one surface and around the first electrically-conductive region (13A) and coupled to a second electrode (17); and a third first electrically-conductive region (13C) provided at the interface of the one surface and around the second first electrically-conductive region (13B) and being in an electrically floating state.

An X-ray radiation sensor device may include a direct X-ray conversion layer, a plurality of electrodes to provide an electric charge in response to an interaction of an X-ray photon within the direct X-ray conversion layer, a plurality of pixel sensor arrays, and at least one interposer. The direct X-ray conversion layer and the plurality of electrodes are disposed on the top surface of the interposer(s). The plurality of the pixel sensor arrays is disposed on the bottom surface of the interposer(s), and the interposer(s) is configured to electrically couple each of the pixel sensor arrays to a respective portion of the plurality of electrodes.

A module assembly for the detection of X-ray radiation includes an X-ray sensor being configured to receive a photon of the X-ray radiation and to provide an electrical signal in response to the received photon. The module assembly further includes a system-in-package structure for processing the electrical signal, the system-in-package structure including an input/output terminal, a first interposer and a second interposer and an integrated circuit which are arranged in a stacked configuration in the system-in-package structure. The package structure can be assembled on all four lateral sides and is thus four-side buttable so that contiguous modules can be mounted on all four sides without a gap between pixels to read out data from large-pixelated detectors of the X-ray sensor.

A first light-receiving element of an embodiment of the disclosure includes: a semiconductor substrate including a photoelectric conversion region; a first first electrically-conductive region provided at a first surface interface of the semiconductor substrate and coupled to a first electrode; a second first electrically-conductive region provided around the first first electrically-conductive region and coupled to a second electrode, at the first surface interface; a third first electrically-conductive region in an electrically floating state provided around the second first electrically-conductive region, at the first surface interface; a first second electrically-conductive region having a different electrically-conductive type between the first first electrically-conductive region and the second first electrically-conductive region, at the first surface interface; and a fourth first electrically-conductive region provided at least between the first first electrically conductive region and the first second electrically-conductive region and having an impurity concentration lower than the first first electrically-conductive region, near the first surface interface.

A radiation detection element includes: a semiconductor part including an incidence surface to which radiations to be detected are incident; a first electrode provided on the incidence surface; and a second electrode that is provided on the incidence surface and is disposed at a position surrounding the periphery of the first electrode. The radiation detection element is a silicon drift-type radiation detection element, and is provided with an insulating protective film that covers the second electrode.