An image pickup device according to an embodiment includes a substrate on which a plurality of pixel circuits are disposed, a semiconductor layer disposed on the substrate, a first electrode disposed on the semiconductor layer, and a second electrode disposed between the semiconductor layer and the substrate. A continuous portion of the semiconductor layer includes a light receiving region disposed between the first electrode and the second electrode and a charge hold region different from the light receiving region.

When detecting particulate radiation, such as electrons, with a pixelated detector, a cloud of electron/hole pairs is formed in the detector. Using the signal caused by this cloud of electron/hole pairs a position of the impact is estimated. When the size of the cloud is comparable to the pixel size, or much smaller, the estimated position shows a strong bias to the center of the pixel and the corners, as well to the middle of the borders. This hinders forming an image with super-resolution. By shifting the position or by attributing the electron to several sub-pixels this bias can be countered, resulting in a more truthful representation.

A detector module for detecting photons includes a detector formed from a semiconductive material, the detector having a first surface, an opposing second surface, and a plurality of sidewalls extending between the first and second surfaces, and a guard band coupled to the sidewalls, the guard band having a length that extends about a circumference of the detector, the guard band having a width that is greater than a thickness of the detector such that an upper rim segment of the guard band projects beyond the first surface of the detector, the upper rim segment being folded over a peripheral region of the first surface along the circumference of the detector, the guard band configured to reduce recombinations proximate to the edges of the detector.

A semiconductor device includes a first semiconductor layer of a first conductivity type having a primary surface and having a sensor therein, a second semiconductor layer of a second conductivity type having a circuit element formed therein. The second semiconductor layer is formed at a same side of the primary surface of the first semiconductor layer. The device further includes an insulating layer formed between the first semiconductor layer and the second semiconductor layer. The insulating layer is disposed on the primary surface of the first semiconductor layer and surrounds the circuit element, and includes a charge-attracting semiconductor pattern of the first conductivity type that is disposed near the circuit element so as to attract electrical charges generated in the insulating layer.

The present disclosure provides a semiconductor device including: a first semiconductor layer including a first region and a second region adjacent to the first region; a first insulator layer provided above the first semiconductor layer; an intermediate semiconductor layer, having an n-type conduction, provided above the first region of the first semiconductor layer and above the first insulator layer; a second insulator layer provided above the intermediate semiconductor layer; a second semiconductor layer provided above the first region of the first semiconductor layer and above the second insulator layer; a sensor formed in the second region of the first semiconductor layer; a contact electrode connected to the intermediate semiconductor layer; and a circuit element formed in the second semiconductor layer.

A radiation detector in which a semiconductor substrate to convert radiation into charges, a circuit board comprising a readout circuit to read out signals from pixels arranged on the substrate, and a bonding layer to bond the substrate and the circuit board are stacked is provided. Each of the pixels comprises an electrode arranged on a first surface on a side of the circuit board of the substrate. The readout circuit is arranged on a second surface on a side of the substrate of the circuit board, and is connected to a conductive pattern arranged on a third surface on an opposite side of the second surface of the circuit board. The electrode is electrically connected to the readout circuit via the conductive pattern and a second conductive member arranged in a through hole penetrating the circuit board and the bonding layer.

Provided herein is a digital x-ray detector wherein a plurality of sensing pixels are formed in a matrix structure, and wherein a pin structure positioned in an odd number line and a pin structure positioned in an even number line are not formed in the same process, thereby preventing a line detect by a particle.

CBCT including monolithic photon counting FPD for medical applications requiring real-time 3D imaging, like mammography, interventional guided procedures or external beam radiotherapy, includes CMOS processed readout electronics monolithically integrated with a single crystalline X-ray absorber by covalent wafer bonding near room temperature and adapted for single photon counting providing high energy, temporal and spatial resolution.

A radiation image-pickup device includes: a drive substrate including a transistor used to read, from each of a plurality of pixels, signal charge based on radiation; a charge collection electrode provided on the drive substrate, for each of the pixels; a conversion layer formed on the charge collection electrode, and configured to generate the signal charge by absorbing radiation; a counter electrode provided on the conversion layer; and a first conductive film disposed, between the drive substrate and the charge collection electrode, to face at least a part of the charge collection electrode, and included in a first capacitive element configured to retain the signal charge.

Disclosed is a method for driving an image sensor based on an automatic trigger method, in which pixels are arranged in the form of a matrix along row lines and column lines. The method includes, during an X-ray sensing period, continuously applying a gate signal having a turn-on level to all of the row lines of the image sensor and periodically reading out data from the all of the row lines; determining whether an X-ray is radiated by comparing the periodically read out data with reference data; generating a trigger signal when it is determined that an X-ray is radiated; and acquiring image data, generated by radiating the X-ray, according to the trigger signal.