A display device includes an insulating substrate, a semiconductor layer formed of polycrystalline silicon, including a first impurity area, a second impurity area, and a channel area, an insulating film which covers the semiconductor layer, a gate electrode formed on the insulating film and opposed to the channel area, a source line electrically connected to the first impurity area, an electrode electrically connected to the second impurity area, and a light-shielding film located between the insulating substrate and the semiconductor layer, disposed at a position displaced from a position opposed to the source line, and opposed to an area including a boundary between the channel area and the second impurity area.

A thin film transistor (TFT) and a method of driving the same are disclosed. The TFT includes: an active layer; a bottom gate electrode disposed below the active layer to drive a first region of the active layer; and a top gate electrode disposed on the active layer to drive a second region of the active layer. The TFT controls the conductivity of the active layer by using the bottom gate electrode and the top gate electrode.

The present invention provides a method for manufacturing a TFT substrate and a structure thereof. The method for manufacturing the TFT substrate uses a connection semiconductor (42) that is formed in a semiconductor layer and is subjected to N-type heavy doping to connect a first semiconductor (41) and a second semiconductor (43) so as to connect the first TFT and the second TFT in series. The N-type heavily doped connection semiconductor (42) substitutes a connection electrode that is formed in a second metal layer in prior art techniques for preventing the design rules of the connection electrode and the second metal layer from being narrowed due to the connection electrode being collectively present on the second metal layer with signal lines of a data line and a voltage supply line and for facilitating increase of an aperture ratio and definition of a display panel. The present invention also provides a TFT substrate structure, which has a simple structure and possesses a high aperture ratio and high definition.

As a display device has higher definition, the number of pixels is increased and thus, the number of gate lines and signal lines is increased. When the number of gate lines and signal lines is increased, it is difficult to mount IC chips including driver circuits for driving the gate lines and the signal lines by bonding or the like, whereby manufacturing cost is increased. A pixel portion and a driver circuit for driving the pixel portion are provided on the same substrate, and at least part of the driver circuit comprises a thin film transistor including an oxide semiconductor sandwiched between gate electrodes. A channel protective layer is provided between the oxide semiconductor and a gate electrode provided over the oxide semiconductor. The pixel portion and the driver circuit are provided on the same substrate, which leads to reduction of manufacturing cost.

The present disclosure relates to an array substrate, a method for manufacturing the array substrate and a display panel. The array substrate includes: a substrate; a poly-silicon thin film disposed on the substrate and including grains arranged along a first direction and a second direction, wherein grain boundaries of the grains extend along the first direction and the second direction; and a plurality of thin film transistors each including a channel formed by the poly-silicon thin film, wherein the channel includes a plurality of intersecting channel portions, each of which extends along a direction that neither perpendicular to nor parallel with the first or second direction.

An array substrate, a display panel, and a display device are provided. The array substrate includes a substrate, and a plurality of scanning lines and a plurality of data lines disposed on the substrate. The plurality of scanning lines and the plurality of data lines are insulated and intersected to define a plurality of pixel units. Each pixel unit includes a thin film transistor and a pixel electrode, a gate electrode of the thin film transistor is electrically connected to a scanning line, a source electrode is electrically connected to a data line, and a drain electrode is electrically connected to the pixel electrode. An active layer of the thin film transistor includes at least one channel region including first sub-channel region and at least one second sub-channel region. A first width of the first sub-channel region is smaller than a second width of the second sub-channel region.

The invention discloses a liquid crystal display device, a thin film transistor array substrate and a method of fabricating the same. The thin film transistor array substrate includes: a substrate including a plurality of photo-sensitive spacer areas, a plurality of thin film transistors arranged on the substrate, each of which includes a source and a drain, and a first planarizing layer overlying the plurality of thin film transistors. Multiple planarizing layer openings are arranged in the first planarizing layer in areas corresponding to the drains of the thin film transistors; a pixel electrode layer is arranged on the first planarizing layer and in contact with the drains; and a second planarizing layer is arranged on the pixel electrode layer and fills the planarizing layer openings.

An organic light emitting display device may include a substrate having a pixel region and a transparent region, a first capacitor disposed in the transparent region of the substrate, a semiconductor device disposed in the pixel region of the substrate, a second capacitor disposed on the semiconductor device, and an organic light emitting structure disposed on the second capacitor. The organic light emitting display device may have a sufficient capacitance for components including the semiconductor device and the organic light emitting structure without increasing an area of the pixel region while maintaining a transmittance of the organic light emitting display device.

An organic light-emitting display apparatus includes a substrate and an active layer disposed on the substrate. The active layer includes a source region, a drain region, and a channel region disposed between the source region and the drain region. A gate electrode overlaps the channel region. An auxiliary gate electrode is disposed between the gate electrode and the channel region. A first voltage is applied to the auxiliary gate electrode. A first thin-film transistor includes the active layer, the auxiliary gate electrode, and the gate electrode.

The invention provides a high-precision display device having a reliable top- and single-gate TFT causing less current leakage. Part of a gate line 10 that crosses a semiconductor layer 103 acts as a gate electrode to form a TFT. The semiconductor layer 103 is connected to a data line 20 via a through-hole 140 on one side of the TFT and also connected to a contact electrode 107 via a through-hole 120 on the other side of the TFT. A floating electrode 30 is formed between the TFT and the through-hole 140 or between the TFT and the through-hole 120. The floating electrode 30 is formed on a layer above the semiconductor layer 103 with the use of the same material and at the same time as the gate electrode.