The present invention provides an image sensor. An image sensor include a pixel array. The pixel array includes: a plurality of pixels; and an isolation structure suitable for insulating between the plurality of pixels. The isolation structure includes: a first conductivity-type conductive layer formed over a substrate; and a second conductivity-type pickup region formed in the first conductivity-type conductive layer and disposed between each plurality of pixels.

A solid state imaging element including a drive circuit and a pixel unit with pixels arranged in a matrix form. The pixels include a photoelectric conversion element configured to convert light incident thereupon into a charge and to accumulate the charge, a charge holding unit connected to the photoelectric conversion element, and a floating diffusion region. The drive circuit transfers a first portion of the charge accumulated in the photoelectric conversion element to the charge holding unit and concurrently transfers a second portion of the charge accumulated in the photoelectric conversion element to the floating diffusion region. Electronic global shutter is realized by transferring charge from the photoelectric conversion elements of each of the pixels at substantially the same time.

An imaging device includes: a photoelectric conversion region that generates photovoltaic power for each pixel depending on irradiation light; and a first element isolation region that is provided between adjacent photoelectric conversion regions in a state of surrounding the photoelectric conversion region.

A complementary metal-oxide-semiconductor (CMOS) image sensor includes an implant region of a second type formed in a crystalline layer of a first type. A channel of a transfer gate entirely covers the implant region, which partially joins a photodiode, a doped well and a floating diffusion node.

A solid-state imaging device includes a plurality of photoelectric conversion portions each provided in a semiconductor substrate and receives incident light through a light sensing surface, and a pixel separation portion provided to electrically separate a plurality of pixels. At least a pinning layer and a light shielding layer are provided in an inner portion of a trench provided on a side portion of each of the photoelectric conversion portions in an incident surface side, the trench includes a first trench and a second trench formed to be wider than the first trench in a portion shallower than the first trench, the pinning layer is formed in an inner portion of the first trench to cover an inside surface of the second trench, and the light shielding layer is formed to bury an inner portion of the second trench at least via the pinning layer.

A semiconductor device includes a semiconductor substrate, a radiation-sensing region, at least one isolation structure, and a doped passivation layer. The radiation-sensing region is present in the semiconductor substrate. The isolation structure is present in the semiconductor substrate and adjacent to the radiation-sensing region. The doped passivation layer at least partially surrounds the isolation structure in a substantially conformal manner.

Provided is an image sensor having improved characteristics. An image sensor in accordance with an embodiment of the present invention may include first and second photoelectric conversion elements formed in a substrate, wherein the first photoelectric conversion element has a first impurity region; a device isolation trench formed in the substrate and between the first and the second photoelectric conversion elements, wherein a sidewall of the device isolation trench is in contact with the first impurity region; and an epitaxial layer filling the device isolation trench, and having different conductivity from the first impurity region.

A solid-state imaging device including is provided. The solid-state imaging device includes: pixels arrayed; a photoelectric conversion element in each of the pixels; a read transistor for reading electric charges photoelectrically-converted in the photoelectric conversion elements to a floating diffusion portion; a shallow trench element isolation region bordering the floating diffusion portion; and an impurity diffusion isolation region for other element isolation regions than the shallow trench element isolation region.

A method for manufacturing an image sensor with deep trench spacing isolation is provided. A trench is formed in a semiconductor substrate, around and between a plurality of pixel regions of the semiconductor substrate. A cap is formed using epitaxy to seal a gap between sidewalls of the trench. Pixel sensors corresponding to the plurality of pixel regions are formed over or within the corresponding pixel regions. An image sensor resulting from the method is also provided.

The present invention relates to a pumped pixel that includes a first photo-diode accumulating charge in response to impinging photons, a second photo-diode, and a floating diffusion positioned on a substrate. The pixel also includes a charge barrier positioned on the substrate between the first photo-diode and the second photo-diode, where the charge harrier temporarily blocks charge transfer between the first photo-diode and the second photo-diode. A pump gate may also be formed on the substrate adjacent to the charge barrier. The pump gate pumps the accumulated charge from the first photo-diode to the second photo-diode through the charge barrier. Also included is a transfer gate positioned on the substrate between the second photo-diode and the floating diffusion. The transfer gate serves to transfer the pumped charge from, the second photo-diode to the floating diffusion.