An image sensor comprises a pixel array having a color filter array including a minimal repeating unit, where the minimal repeating unit consists of 44 pixels including two red pixels, four green pixels, two blue pixels, and eight clear pixels. When clear pixels are saturated and blooming, a blue pixel is affected by three or two clear pixels, but not four clear pixels.

An image sensor comprises a pixel array having a color filter array including a minimal repeating unit, where the minimal repeating unit consists of 44 pixels including two red pixels, four green pixels, two blue pixels, and eight clear pixels. When clear pixels are saturated and blooming, a blue pixel is affected by three or two clear pixels, but not four clear pixels.

Provided is an image sensor including a pixel including a photoelectric device configured to generate photoelectric charges, a charge storage connected to the photoelectric device and configured to store the photoelectric charges, a driving transistor configured to generate a pixel signal based on a voltage from a first node connected to the photoelectric device, a transfer transistor including a vertical transfer gate connected between the first node and a second node, a first region at a first side of the transfer transistor and doped with a first doping concentration, and a second region at a second side of the transfer transistor and doped with a second doping concentration that is different from the first doping concentration, an overflow transistor between the second node and the charge storage element, and a row driver connected to the pixel and configured to control the pixel.

The present disclosure relates to a CMOS image sensor having a doped isolation structure separating a photodiode and a pixel device, and an associated method of formation. In some embodiments, the CMOS image sensor has a vertical transfer gate extending vertically from a front-side of a substrate to a first position within the substrate and a photodiode doped region disposed under and extending laterally toward one side of the vertical transfer gate. A doped lateral isolation region disposed along a top surface of the photodiode doped region, and a doped vertical isolation region disposed along a sidewall of the vertical transfer gate. A doped pixel device well is vertically above the doped lateral isolation region and separated from the vertical transfer gate by the doped vertical isolation region. A pixel device is disposed within the doped pixel device well at the front-side of the substrate.