A preparation method for an N-type TOPCon cell comprising 1) texturing an N-type silicon wafer with an alkaline solution; 2) performing boron diffusion and laser lightly-doping on a front face of the wafer to form a lightly-doped region, and performing re-diffusion to form a front mask; 3) polishing a back face of the wafer; 4) performing three-in-one multi-layer thin film deposition on the back face of the wafer, to grow a tunneling silicon oxide thin film layer, a doped amorphous silicon thin film layer, and a back mask; 5) performing high-temperature annealing under a preset high-temperature condition to form a doped polysilicon layer and activate doped phosphorus; 6) cleaning the front mask on the front face and back mask on the back face of the wafer; 7) depositing passivation films on the front face and back face of the N wafer; and 8) printing and sintering.

A Tunnel Oxide Passivated Contact (TOPCon) solar cell, and a method therefor are provided. The TOPCon solar cell includes: a silicon substrate; a tunneling layer formed on a surface of the silicon substrate; a polycrystalline silicon layer formed on a surface of the tunneling layer; a polycrystalline germanium layer formed on a surface of the polycrystalline silicon layer; a lower passivation layer formed on a surface of the polycrystalline germanium layer; and a lower electrode formed on the lower passivation layer and electrically connected to the polycrystalline germanium layer.

In one aspect, a manufacturing method for a solar cell comprises: an oxidation impurity removal and cleaning step carried out between a wet texturing step and a boron/phosphorus diffusion step. The oxidation impurity removal and cleaning step comprises: heating a silicon wafer undergoing wet texturing performed by means of basket loading, so as to form first oxide layers to adsorb impurities of the silicon wafer; and removing the first oxide layers on the front surface and the back surface of the silicon wafer.

An improved method of doping a workpiece is disclosed. The method is particularly beneficial to the creation of interdigitated back contact (IBC) solar cells. A patterned implant is performed on one surface of the workpiece. A self-aligned masking process is then performed, which is achieved by exploiting the changes in surface properties caused by the patterned implant. The masking process includes applying a coating that preferentially adheres to the previously implanted regions. A blanket implant is then performed, which serves to implant the portions of the workpiece that are not covered by the coating. Thus, the blanket implant is actually a complementary implant, doping the regions that were not implanted by the first patterned implant. The coating is then optionally removed from the workpiece.

A solar cell includes a photoelectric conversion section that, includes an n-type crystal silicon substrate, a p-type silicon-based thin-film provided on a first principal surface, and an n-type silicon-based thin-film provided on a second principal surface, and further includes a first electrode layer on the p-type silicon-based thin-film, and a second electrode layer on the n-type silicon-based thin film. A patterned collector electrode is provided on the first electrode layer. On the first principal surface of the photoelectric conversion section, a wraparound portion of the second electrode layer, an insulating region where neither the first electrode layer nor the second electrode layer is provided, and a first electrode layer-formed region are arranged in this order from a peripheral end.

A jettable etchant composition includes 1 to 90 wt % active ingredient, and a remainder containing any combination of the following: 10 to 90 wt % solvent, 0 to 10 wt % reducing agents, <1 to 20 wt % pickling agent, 0 to 5 wt % surfactant, and 0 to 5 wt % antifoam agent. The composition can also include a soluble compound containing at least one element which when dissolved has a higher standard electrode potential than a metal to be etched or a soluble compound containing a group IA element, and a soluble platinum group metal. An ink composition can include a group VA compound or a group IIIA compound in a solvent system formulated to be jettable on a surface at a drop volume of about 5 to about 10 picoliters and to achieve a final sheet resistance of less than about 20 / of the surface upon activation.

The present invention concerns methods for producing photovoltaic material and a device able to exploit high energy photons. The photovoltaic material is obtained from a conventional photovoltaic material having a top surface intended to be exposed to photonic radiation, having a built-in P-N junction delimiting an emitter part and a base part and comprising at least one area or region specifically designed, treated or adapted to absorb high energy or energetic photons, located adjacent or near at least one hetero-interface. According to the invention, this material is subjected to treatments resulting in the formation of at least one semiconductor based metamaterial field or region being created, as a transitional region of the or a hetero-interface, in an area located continuous or proximate to the or an absorption area or region for the energetic photons of the photonic radiation impacting said photovoltaic material.

A method of manufacturing a pinned photodiode, including: forming a region of photon conversion into electric charges of a first conductivity type on a substrate of the second conductivity type; coating said region with a layer of a heavily-doped insulator of the second conductivity type; and annealing to ensure a dopant diffusion from the heavily-doped insulator layer.

A thin-film photoelectric converter in which a first electrode layer formed of a transparent conductive material, a photoelectric conversion layer for photoelectric conversion, and a second electrode layer formed of a conductive material that reflects light are stacked in that order on an insulating light-transmitting substrate. The photoelectric conversion layer and the second electrode layer are divided by dividing grooves into islands that form a plurality of photoelectric conversion cells separated from each other, adjacent ones of the plurality of photoelectric conversion cells separated by the dividing grooves being electrically connected in series. The photoelectric conversion layer includes: a first semiconductor layer including a microcrystalline structure; and a second semiconductor layer including an amorphous structure, the second semiconductor layer being disposed so as to surround all side wall portions of the first semiconductor layer that extend in in-plane directions of the insulating light-transmitting substrate.

The present invention provides stretchable, and optionally printable, semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Stretchable semiconductors and electronic circuits of the present invention preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention may be adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.