Provided are a solid-state imaging device, a manufacturing method thereof, and an electronic device that enable improvement of the sensitivity in a near infrared region by a simpler process. A solid-state imaging device includes a first semiconductor layer in which a first photoelectric conversion unit and a first floating diffusion are formed, a second semiconductor layer in which a second photoelectric conversion unit and a second floating diffusion are formed, and a wiring layer including a wiring electrically connected to the first and second floating diffusions. The first semiconductor layer and the second semiconductor layer are laminated, and the wiring layer is formed on a side of the first or second semiconductor layer, the side being opposite to a side on which the first semiconductor layer and the second semiconductor layer face each other.

A pixel array includes octagon-shaped pixel sensors and a combination of visible light pixel sensors (e.g., red, green, and blue pixel sensors) and near infrared (NIR) pixel sensors. The color information obtained by the visible light pixel sensors and the luminance obtained by the NIR pixel sensors may be combined to increase the low-light performance of the pixel array, and to allow for low-light color images in low-light applications. The octagon-shaped pixel sensors may be interspersed in the pixel array with square-shaped pixel sensors to increase the utilization of space in the pixel array, and to allow for pixel sensors in the pixel array to be sized differently. The capability to accommodate different sizes of visible light pixel sensors and NIR pixel sensors permits the pixel array to be formed and/or configured to satisfy various performance parameters.

The present technology relates to a light receiving device that includes a pixel array unit in which pixels each having a first tap detecting charge photoelectrically converted by a photoelectric conversion unit and a second tap detecting charge photoelectrically converted by the photoelectric conversion unit are two-dimensionally arranged in a matrix. In the pixel array unit, four vertical signal lines for outputting a detection signal detected by any one of the first tap and the second tap to the outside of the pixel array unit are arranged for one pixel column.

A photodetector includes a gate electrode extending in a first direction, a ferroelectric layer on the gate electrode and maintaining a state of polarization formed by a gate voltage applied to the gate electrode, a light absorbing layer on the ferroelectric layer and extending in a second direction intersecting the gate electrode, the light absorbing layer including a two-dimensional (2D) material of a layered structure, a source electrode on the ferroelectric layer and connected to a first end of the light absorbing layer, and a drain electrode on the ferroelectric layer and connected to the a second end of the light absorbing layer.

An image sensor including a plurality of pixels, each including: a photodetector semiconductor region; a metal region arranged on a first surface of the semiconductor region; a band-pass or band-stop interference filter arranged on a second surface of the semiconductor region opposite to the first surface; and between the semiconductor region and the metal region, an absorbing stack comprising, in the order from the semiconductor region, a dielectric layer, a silicon layer, and a tungsten layer.

A sensor device according to the present technology includes a plurality of pixel units arranged in a row direction and a column direction, in which each of the plurality of pixel units includes a plurality of unit pixels arranged in a row direction and a column direction, each of the plurality of unit pixels includes at least one pixel having a photoelectric conversion element and a scattering structure that scatters light incident on the photoelectric conversion element, and at least one of the unit pixels has a different formation pattern of the scattering structure from that of the other unit pixels.

An image sensor includes: a semiconductor substrate that has a first surface and a second surface opposite to each other. The semiconductor substrate includes: a first trench that vertically extends from the first surface of the semiconductor substrate and provides a pixel region, and a second trench that vertically extends from the first surface of the semiconductor substrate and is disposed on the pixel region. The image sensor further includes: a pixel separation structure that vertically extends from the second surface of the semiconductor substrate and overlaps the first trench; and a gap-fill dielectric layer disposed on the first surface of the semiconductor substrate, wherein the gap-fill dielectric layer includes a pixel separation part and a scattering pattern part, wherein the pixel separation part is disposed in the first trench, and the scattering pattern part is disposed in the second trench.

This disclosure provides an array substrate, including: a display region and a peripheral region. The peripheral region includes at least one first sensor. The first sensor includes a photodiode and a driving circuit which are electrically connected to each other. The photodiode includes: an anode, a cathode and a photosensitive material layer. The array substrate includes: a base substrate, a plurality of thin film transistors, a common electrode and a pixel electrode. The common electrode is reused as an anode of the photodiode. The pixel electrode is reused as a cathode of the photodiode. One of the plurality of thin film transistors is reused as a first transistor of the driving circuit.

A stacked filter for an image sensor including an infrared (IR) pixel is provided. The stacked filter includes a first filter layer disposed at the IR pixel. The first filter layer allows light with wavelengths of a first band to be transmitted through. The stacked filter further includes a second filter layer stacked with the first filter layer. The second filter layer allows light with wavelengths of a second band to be transmitted through. The first band partially overlaps the second band at wavelengths of a third band. The third band is narrower than the first band and the second band. The stacked filter allows light with the wavelengths of the third band to be transmitted through. Furthermore, an image sensor containing a stacked filter is also provided.

Provided is an image sensor having a hybrid pixel structure in which pixels that sense visible light and pixels that sense ultraviolet light or infrared light are arranged together. For example, the image sensor includes a plurality of first pixels and a plurality of second pixels that are different in size. A width of each of the plurality of second pixels in a horizontal direction is a first integer multiple of a width of each of the plurality of first pixels in the horizontal direction, and a width of each of the plurality of second pixels in a vertical direction is a second integer multiple of a width of each of the plurality of first pixels in the vertical direction. The image sensor enables the pixels sensing ultraviolet light or infrared light, which have different sizes from the pixels sensing visible light, to be efficiently arranged together with the pixels sensing visible light, on the same substrate.