A disclosed semiconductor photodetector includes a first semiconductor layer having a first refractive index and a first band gap; a second semiconductor layer formed on the first semiconductor layer, the second semiconductor layer having a second refractive index and a second band gap; a first electrode; and a second electrode. The second refractive index is greater than the first refractive index, and the second band gap is smaller than the first band gap. The first semiconductor layer includes a p-type first region, an n-type second region, and a non-conductive third region between the first region and the second region. The second semiconductor layer includes a p-type fourth region in ohmic contact with the first electrode, an n-type fifth region in ohmic contact with the second electrode, and a non-conductive sixth region between the fourth region and the fifth region.

An active pixel sensor control circuit for a CMOS image sensor includes: a first control circuit including a transfer transistor, a reset transistor, a source follower and a select transistor, wherein the reset transistor and the source follower are coupled to a first power supply signal; and a second type control circuit including a transfer transistor, a reset transistor, a source follower and a select transistor, wherein the source follower is coupled to the first power supply signal and the reset transistor is coupled to a second power supply signal. When a transfer signal is applied to the gates of the transfer transistors and a reset signal is applied to the gates of the reset transistors, a second photodiode and a fourth photodiode are charged to the first power supply level, and a first photodiode and a third photodiode are discharged to the second power supply level.

An optoelectronic device includes a first electrode, a second electrode that is spaced apart from the first electrode, an optoelectronic unit that is disposed between the first electrode and the second electrode, an insulating layer and a driving electrode. The optoelectronic unit includes an optoelectronic stack emitting or absorbing at least two wavelengths of light. The insulating layer is disposed on a lateral side of the optoelectronic stack that extends in a stacking direction of the optoelectronic stack. The driving electrode is disposed on the insulating layer at a location corresponding in position to the optoelectronic unit and is separated from the first and second electrodes.

A quantum detector is provided with a vertically stacked structure. The detector comprises a conductive substrate, a plurality of quantum detectors configured on the conductive substrate, and a lower electrode. Each of the quantum detectors comprises an electron transport layer (GaAs), a three-dimensional topological insulator layer (Sb-doping Bi.sub.2Te.sub.3), a light-absorbing layer (e.g. having excellent graphene quantum dot (ZnO)), and an upper electrode. The lower electrode is disposed between first and second upper electrodes of the first and second quantum detectors that are adjacent to each other to provide a vertical series of electrical coupling. Thus, the present invention provides a novel photodetector with a vertical structure. With the preparation of a topological material through high-power impulsed magnetron sputtering (having a special surface state of an extremely-low energy gap), the mobility of electron-hole-pair carriers is effectively improved. The whole device achieves low energy consumption and extended use life.

A time-of-flight (ToF) sensor includes a photodetector array and a processing circuit. The photodetector array includes a plurality of photodetectors wherein each photodetector of the photodetector array includes a silicon-based, light-sensitive diode. Each silicon-based, light-sensitive diode includes a photosensitive layer comprising a plurality of quantum dot particles sensitive to a near infrared (NIR) region of an electromagnetic spectrum, wherein the plurality of quantum dot particles converts optical energy into electrical energy to generate an electrical current in response to receiving NIR light having a wavelength in the NIR region. The processing circuit is configured to receive the electrical current and calculate a time-of-flight of the received NIR light based on the electrical current.

The present invention relates to a photothermal effect-based mid-infrared detecting apparatus including an optical sensor that detects visible light, an infrared light layer disposed on the optical sensor and including a material that absorbs a mid-infrared light, and a processor that detects the mid-infrared light by analyzing a sensor signal output from the optical sensor, wherein the optical sensor receives heat generated by the mid-infrared light incident on the infrared light layer and outputs the sensor signal modulated by the heat to the processor.

An integrated semiconductor optoelectronic component for sensing ambient light levels includes a silicon photomultiplier configured to deliver an output signal indicative of the intensity of the light that irradiates the component. The silicon photomultiplier has an active surface area for light detection. The component also includes an optical filter covering the active surface area of the silicon photomultiplier. The optical filter is adapted to selectively transmit light onto the active surface area as a function of wavelength. The optical filter is a scotopic filter and has a spectral transmission curve that mimics the spectral response of the human eye under low-light conditions. The component further includes readout electronics for processing the output signal of the silicon photomultiplier.

An optoelectronic device is provided, the optoelectronic device including a radiation source that is configured to emit electromagnetic radiation, a sensor that is configured to detect electromagnetic radiation, a carrier on which the radiation source and the sensor are arranged, and a deflection element, wherein the sensor is arranged between the deflection element and the carrier, the radiation source has a main plane of extension that extends parallel to a main plane of extension of the sensor, and the deflection element has at least one deflection surface that encloses an angle of more than 0 with the main plane of extension of the sensor. Furthermore, a method for operating an optoelectronic device is provided.

A device including a base structure, and a superlattice structure, the superlattice structure disposed on the base structure. The superlattice structure includes a number of (IIIx, Aly)Oz layers, III being a Group 3 element different from Aluminum; where a composition (x, y) and thickness of each layer is selected to provide a preselected energy band structure.

The present disclosure relates to a photoelectric device based on quantum dots with a zirconium oxide layer and its manufacturing method. A photoelectric device according to the present disclosure includes a substrate; a zinc oxide layer stacked on the substrate; a quantum dots (QDs) layer stacked on the zinc oxide layer; and a zirconium oxide layer stacked on the QDs layer. According to the present disclosure, the zirconium oxide layer further formed in the photoelectric device may enable the photoelectric device to operate as a color selective image sensor that selectively detect light in multiple wavelength regions using only quantum dots of a single wavelength.