A solid state imaging element according to an embodiment includes: a converter (14) that converts an analog pixel signal read out from a pixel into a bit value, successively for each of a plurality of bits, on the basis of a threshold voltage set according to a conversion history of the bit converted before a target bit; a plurality of voltage generation units (102a and 102b) that each generate a plurality of reference voltages; and a setting unit (12d) that sets the threshold voltage using the reference voltage selected from the reference voltages generated by each of the voltage generation units on the basis of a conversion result.

The disclosure relates to active pixel sensors such as CMOS sensors. A sample stage of each pixel may comprise first and second sample switches in series between a buffer amplifier and a storage node. The first sample switch is connected to a column sample line, and the second sample switch is connected to a row sample line, such that an exposure signal is only passed to the storage node at a time when both a column sample signal and a row sample signal are active.

A pulse generator of an image sensor includes a delay cell including a plurality of transistors arranged in series between a power voltage and a ground, a stabilization capacitor, and a stabilization switch. The power voltage is supplied to a first terminal of a first transistor disposed first among the plurality of transistors, and a gate terminal of the first transistor is connected to a first node. An input voltage is supplied to a gate terminal of an n-th transistor disposed last among the plurality of transistors, and a ground voltage is supplied to a first terminal of the n-th transistor. The stabilization switch is disposed between a reference voltage input terminal providing a reference voltage and the first node. The stabilization switch is turned on by an input bias control signal to supply the reference voltage to the first node.

A pixel matrix includes a sub-matrix of four adjacent pixels. Each of the pixels of the sub-matrix comprises: a set of a photoelectric-effect element and a memory point, a detection node, a transfer gate. The binning stage is connected to the set and is common with an adjacent pixel of the sub-matrix. At least one detection node per sub-matrix is common to two adjacent pixels of the sub-matrix. The pixel matrix furthermore comprises at least one readout stage per sub-matrix, connected to the common detection node.

An image sensor includes sensing pixels, each comprising a photodetector in electrical communication with a floating diffusion capacitor via a transfer gate, and a lateral overflow storage capacitor coupled to the floating diffusion capacitor via a lateral overflow control gate. A first readout circuit circuitry located between the transfer gate and the lateral overflow control gate comprises a first amplifier. A second readout circuitry, located opposite the lateral overflow control gate from the first readout circuitry, comprises a second amplifier. Following image integration, charge stored on the floating diffusion capacitor is readout using the first readout circuitry and charge stored on the lateral overflow storage capacitor is readout using the second readout circuitry. In a second readout, charge stored on the photodetector is readout using the first readout circuitry with a first amplification applied and charge stored on the photodetector is readout with a second, different amplification applied.

An imaging device includes an image sensing circuitry configured to receive image signals from pixels, to convert the received image signals into image data, and to output the image data. The imaging device includes a digital processing circuitry configured to process image data in synchronization with a digital clock. The digital processing circuitry includes a digital clock generator configured to generate the digital clock. The digital clock generator is configured to scatter the digital clock, in response to the image sensing circuitry converting the image signals into the image data.

Provided are a pixel array and an image sensor including the same. The pixel array includes a plurality of sub-pixels adjacent to each other and a readout circuit connected to the plurality of sub-pixels through a floating diffusion node. Each of the sub-pixels includes a photoelectric conversion element, an overflow transistor connected to the photoelectric conversion element, a phototransistor connected to the photoelectric conversion element and the overflow transistor, and a storage element connected to the phototransistor.

An image sensor includes a pixel group. The pixel group includes a first color filter, first to third photodiodes below the first color filter such that the first color filter overlaps each of the first to third third photodiodes in a vertical direction, wherein the first to third photodiodes are arranged in a first direction perpendicular to the vertical direction, first to third floating diffusions configured to accumulate electric charges generated by the first to third photodiodes, respectively, a source follower transistor configured to output a first pixel signal based on the electric charges accumulated in at least one of the first to third floating diffusions, and a first metal layer configured to receive the first pixel signal from the source follower transistor, wherein the first metal layer extends in a second direction intersecting the first direction, wherein the first to third floating diffusions are arranged in the first direction.

An image sensor includes a pixel array having a plurality of pixels; a row driver providing the pixel array with a boosting signal; and a read-out circuit configured to read out pixel signals output from pixels of a row line selected by the row driver. Each of the plurality of pixels includes: a first photodiode; a transmission transistor connected to the first photodiode; a first floating diffusion node, a second floating diffusion node, and a third floating diffusion node, which are connected to the transmission transistor to accumulate charges generated by the first photodiode; an LCG capacitor connected to the third floating diffusion node to accumulate the charges generated by the first photodiode; an MCG transistor connected between the first floating diffusion node and the second floating diffusion node; and an LCG transistor connected to the third floating diffusion node.

To further capture an image in a solid-state image sensor that detects an address event. The solid-state image sensor includes a photoelectric conversion element, a charge accumulation unit, a transfer transistor, a detection unit, and a connection transistor. The photoelectric conversion element generates a charge by photoelectric conversion. The charge accumulation unit accumulates the charge and generates a voltage according to an amount of the charge. The transfer transistor transfers the charge from the photoelectric conversion element to the charge accumulation unit. The detection unit detects whether or not a change amount of a photocurrent according to the amount of the charge exceeds a predetermined threshold. The connection transistor connects the charge accumulation unit and the detection unit to cause the photocurrent to flow.