Improvement of noise characteristics is achievable. A solid-state imaging device according to an embodiment includes a plurality of photoelectric conversion elements (333) arranged in a two-dimensional grid shape in a matrix direction and each generating a charge corresponding to a received light amount, and a detection unit (400) that detects a photocurrent produced by the charge generated in each of the plurality of photoelectric conversion elements. A chip (201a) on which the photoelectric conversion elements are disposed and a chip (201b) on which at least a part of the detection unit is disposed are different from each other.

Techniques are described for disparity-preserving pixel binning during consistently binned parallel readout of an imaging sensor array having both phase detection autofocus (PDAF) pixels and imaging pixels. Each group of PDAF pixels and each group of imaging pixels is coupled with pixel actuators according to an particular arrangement, so that consistently applied control of the pixel actuators results in desired binning of both the PDAF pixels and the imaging pixels. According to some implementations, though such control of the pixel actuators is consistently applied across the pixels of the array, parallel readout of the sensor array yields diagonally binned imaging pixels, but vertically binned PDAF pixels to preserve horizontal PDAF disparity information. Additionally or alternatively, disparity-inducing structures are configured to position same-disparity PDAF pixels so that consistently applied control of the pixel actuators preserves disparity information during binning.

An image sensor may include an array of image pixels. The array of image pixel may be coupled to column readout circuitry. A given image pixel may generate a low light signal and a high light signal for a given exposure. A column line may couple the given image pixel to readout circuitry having amplifier circuitry. The column line may be coupled to an autozeroing transistor for reading out the high light signal and a source follower stage for readout out the low light signal. The amplifier circuitry may receive different common mode voltage depending on whether it is amplifying the low or high light signal. The gain and other operating parameters of the amplifier circuitry may be adjusted based on whether it is amplifying the low or high signal. If desired, separate amplifier circuitry may be implemented for the low and high light signals.

An imaging element includes a first substrate that is provided with a photoelectric conversion unit which generates an electric charge by photoelectric conversion, a signal line to which a signal based on the electric charge generated by the photoelectric conversion unit is output, and a supply unit which supplies a voltage to the signal line such that a voltage of the signal line does not fall below a predetermined voltage, and a second substrate that is provided with a processing unit which processes the signal output to the signal line and is stacked on the first substrate.

To make it possible to reduce power consumption in a charge pump that supplies driving power to a pixel array. An imaging element (4) according to an embodiment includes: an imaging unit (100) in which pixels (10) including a light receiving element are arrayed, a drive unit (112) that generates a drive signal for driving the pixels, a charge pump circuit (122) that generates electric power for driving the drive unit, and a control unit (120) that controls, according to operation of the imaging unit, a driving capability of the charge pump circuit to drive the drive unit.

The present invention relates to a photosensitive array and an imaging apparatus incorporating the photosensitive array. Each pixel region in the photosensitive array corresponds to a substrate tap region, and the substrate of the pixel region continues with the substrate of the corresponding substrate tap region. The substrate tap region provides a voltage application location for the substrate of the corresponding pixel region. Multiple columns of pixel regions include sets of two adjacent columns, in each of which sets, charge readout regions of each column directly face charge readout regions of the other column while photosensitive regions of each column are separated from photosensitive regions of the other column by the charge readout regions, and each of which sets includes subsets of four pixel regions belonging to two adjacent rows and surrounding a corresponding substrate tap region.

An image sensor including an image signal processor and an operating method of the image sensor are provided. An image sensor may include a pixel array configured to convert a received optical signal into electrical signals, a readout circuit configured to analog-digital convert the electrical signals to generate image data, and an image signal processor configured to perform one-dimensional filtering in each of a first direction and a second direction on the image data to remove noise of the image data, the second direction being different than the first direction.

An amplifier transistor within an image-sensor pixel is implemented upside down relative to conventional orientation such that a substrate-resident floating diffusion node of the pixel forms the gate of the amplifier transistor—achieving increased pixel conversion gain by eliminating the conventional metal-layer interconnection between the floating diffusion node and amplifier-transistor gate and concomitant parasitic capacitance.

In a pixel 200, a floating diffusion FD11 and a first capacitor CS11 are selectively connected to each other via a first connection element LG11-Tr, to change the capacitance of the floating diffusion FD11 between a first capacitance and a second capacitance, thereby changing the conversion gain between a first conversion gain (HCG) corresponding to the first capacitance and a second conversion gain (MCG) corresponding to the second capacitance. The floating diffusion FD11 and a second capacitor CS12 are connected together through a second connection element SG11-Tr to change the capacitance of the floating diffusion FD11 to a third capacitance, thereby changing the conversion gain of the source following transistor SF11-Tr to a third conversion gain (LCG) corresponding to the third capacitance

An imaging device includes an image sensing device, a private key generation unit, and an image encryption unit. The image sensing device includes an image generator configured to generate image data acquired by capturing as image, and a physical unclonable function (PUF) generator configured to generate physical unclonable function (PUF) data including information about at least one fixed pattern noise (FPN) data value and at least one random telegraph noise (RTN) data value. The private key (KEY) generation unit generates a private key based on the at least one FPN data value and the at least one RTN data value that are acquired from the PUF data. The image encryption unit encrypts the image data using the private key. A first transistor included in the PUF generator exhibits different properties from a second transistor that is included in the image generator and corresponds to the first transistor.