A method for manufacturing a Hall sensor, an insulation layer being initially applied to a wafer including an ASIC or integrated into the wafer, a Hall layer, for example, made of InSb or another III-V semiconductor material, being situated thereon, and this Hall layer being at least sectionally recrystallized with the aid of a laser. The insulation layer may be porous or may include a cavity or reflective layer for thermal protection of the ASIC.

A magnetic memory device includes a cylindrical core; a plurality of layers surrounding the cylindrical core; a first terminal connected to a first end of the cylindrical core; and a second terminal connected to a second end of the cylindrical core, opposite the first end, wherein the first terminal is configured to receive a first current flowing radially from the cylindrical core through the plurality of layers, the first current imparting a torque on, at least, a magnetization of an inner layer of the plurality of layers.

A method for manufacturing semiconductor devices is provided. The method includes bonding a semiconductor element to a first surface of a planar lead frame, clamping a partial area of the lead frame to hold the lead frame and the semiconductor element in molding dies, and covering at least a part of the lead frame and the semiconductor element with a resin member by resin molding which fills the molding dies with resin. A thin-walled portion having a relative small thickness is previously formed on a shortest virtual line connecting a clamp area of the lead frame to an area where the semiconductor element is bonded.

Methods, devices, and compositions for use with spintronic devices such as magnetic random access memory (MRAM) and spin-logic devices are provided. Methods include manipulating magnetization states in spintronic devices and making a structure using spin transfer torque to induce magnetization reversal. A device described herein manipulates magnetization states in spintronic devices and includes a non-magnetic metal to generate spin current based on the giant spin Hall effect, a ferromagnetic thin film with perpendicular magnetic anisotropy, an oxide thin film, and an integrated magnetic sensor. The device does not require an insertion layer between a non-magnetic metal with giant spin Hall effect and a ferromagnetic thin film to achieve perpendicular magnetic anisotropy.

A method of manufacturing a magnetoresistive device may comprise forming a first magnetic region, an intermediate region, and a second magnetic region of a magnetoresistive stack above a via; removing at least a portion of the second magnetic region using a first etch; removing at least a portion of the intermediate region and at least a portion of the first magnetic region using a second etch; removing at least a portion of material redeposited on the magnetoresistive stack using a third etch; and rendering at least a portion of the redeposited material remaining on the magnetoresistive stack electrically non-conductive.

A perpendicular magnetic tunnel junction is disclosed wherein a metal insertion (MIS) layer is formed within a free layer (FL), a partially oxidized Hk enhancing layer is on the FL, and a nitride capping layer having a buffer layer/nitride layer (NL) is on the Hk enhancing layer to provide an improved coercivity (Hc)/switching current (Jc) ratio for spintronic applications. Magnetoresistive ratio is maintained above 100%, resistance×area (RA) product is below 5 ohm/μm.sup.2, and thermal stability to 400° C. is realized. The FL comprises two or more sub-layers, and the MIS layer may be formed within at least one sub-layer or between sub-layers. The buffer layer is used to prevent oxygen diffusion to the NL, and nitrogen diffusion from the NL to the FL. FL thickness is from 11 Angstroms to 25 Angstroms while MIS layer thickness is preferably from 0.5 Angstroms to 4 Angstroms.

A perpendicular magnetic tunnel junction is disclosed wherein first and second interfaces of a free layer (FL) with a first metal oxide (Hk enhancing layer) and second metal oxide (tunnel barrier), respectively, produce perpendicular magnetic anisotropy (PMA) to provide thermal stability to 400° C. Insertion of an oxidation control layer (OCL) such as Mg and a magnetic moment tuning layer (MMTL) like Mo or W enables FL thickness to be reduced below 10 Angstroms while providing sufficient PMA for a switching voltage substantially less than 500 mV at a 10 ns pulse width and 1 ppm defect rate. Magnetoresistive ratio is ≥1, and resistance×area (RA) product is below 5 ohm-μm.sup.2. Embodiments are provided where MMTL and OCL materials interface with each other, or do not contact each other. Each of the MMTL and OCL materials may be deposited separately, or at least one is co-deposited with the FL.

A spin-transfer-torque magnetoresistive memory comprises apparatus and method of manufacturing a three terminal magnetoresistive memory element having highly conductive bottom electrodes overlaid on top of a SHE-metal layer in the regions outside of an MTJ stack. The memory cell comprises a bit line positioned adjacent to selected ones of the plurality of magnetoresistive memory elements to supply a reading current across the magnetoresistive element stack and two highly conductive bottom electrodes overlaid and electrically contacting on top of a SHE-metal layer in the outside of an MTJ region and to supply a bi-directional spin Hall effect recording current, and accordingly to switch the magnetization of the recording layer. Thus magnetization of a recording layer can be readily switched or reversed to the direction in accordance with a direction of a current along the SHE-metal layer by applying a low write current.

An integrated Hall effect sensor is disclosed. The integrated Hall effect sensor has high tunable sensitivity by varying the thickness of the Hall plate. The Hall effect sensor is integrated onto a crystalline-on-insulator substrate, such as silicon-on-insulator (SOI) substrate. The Hall plate is part of the surface substrate of the SOI substrate. A sensor well is disposed in the bulk substrate of the SOI substrate. By applying an appropriate well bias voltage, the thickness of the Hall plate can be tuned from below the surface substrate to achieve the desired sensitivity. A gate may also be provided on the surface substrate. Biasing the gate with an appropriate gate bias voltage can further enhance thickness tunability of the Hall plate from above to achieve the desired sensitivity.

A spin-orbit torque device is described. The spin-orbit torque device comprising an interfacing layer and a magnetic layer having a switchable magnetization direction. An interface is formed between the interfacing layer and the magnetic layer, the interface having a 3m1 crystallographic point group symmetry adapted to interact with an electric current to generate a spin torque for switching the magnetization direction of the magnetic layer. A method for fabricating the spin-orbit device and a method for switching the switchable magnetization of a spin-orbit torque device are also described.