A reservoir element according to an aspect of the present invention includes a plurality of ferromagnetic layers laminated in a first direction and separated from each other, at least one spin-orbit torque wiring that faces at least one of the plurality of ferromagnetic layers, and a spin transport layer that faces the plurality of ferromagnetic layers, connects at least the two ferromagnetic layers closest to each other among the plurality of ferromagnetic layers and transports spins.

A magnetic element includes a first ferromagnetic layer, and a first wiring that faces the first ferromagnetic layer in a first direction. The first wiring has a wiring portion extending in a second direction different from the first direction, and a wide width portion having a wider width than the wiring portion in a third direction intersecting the second direction when viewed from the first direction. A center position of the wiring portion in the third direction and a center position of the first ferromagnetic layer in the third direction are different from each other.

Embodiments of the present disclosure generally include spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) devices and methods of manufacture thereof. The SOT-MRAM devices described herein include an SOT layer laterally aligned with a magnetic tunnel junction (MTJ) stack and formed over a trench in an interconnect. Thus, the presence of the SOT layer outside the area of the MTJ stack is eliminated, and electric current passes from the interconnect to the SOT layer by SOT-interconnect overlap. The devices and methods described herein reduce the formation of shunting current and enable the MTJ to self-align with the SOT layer in a single etching process.

A magnetic recording array according to the present embodiment includes a plurality of spin elements, a first reference cell, and a second reference cell, wherein the plurality of spin elements, the first reference cell, and the second reference cell each have a wiring and a stacked body including a first ferromagnetic layer stacked on the wiring, wherein the electrical resistance of the wiring of the first reference cell is higher than the electrical resistance of the wiring of each spin element, and wherein the electrical resistance of the wiring of the second reference cell is lower than the electrical resistance of the wiring of each spin element.

A magnetoresistance effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a non-magnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, wherein at least one of the first ferromagnetic layer and the second ferromagnetic layer includes a first layer and a second layer in order from the side closer to the non-magnetic layer, the first layer contains a crystallized Co-based Heusler alloy, at least a part of the second layer is crystallized, the second layer contains a ferromagnetic element, boron element and an additive element, and the additive element is any element selected from a group consisting of Ti, V, Cr, Cu, Zn, Zr, Mo, Ru, Pd, Ta, W, Ir, Pt, and Au.

The present disclosure generally relates to spin-orbital torque (SOT) differential reader designs. The SOT differential reader is a multi-terminal device that comprises a first shield, a first spin hall effect layer, a first free layer, a gap layer, a second spin hall effect layer, a second free layer, and a second shield. The gap layer is disposed between the first spin hall effect layer and the second spin hall effect layer. Electrical lead connections are located about the first spin hall effect layer, the second spin hall effect layer, the gap layer, the first shield, and/or the second shield. The electrical lead connections facilitate the flow of current and/or voltage from a negative lead to a positive lead. The positioning of the electrical lead connections and the positioning of the SOT differential layers improves reader resolution without decreasing the shield-to-shield spacing (i.e., read-gap).

A spin current magnetization rotational magnetoresistance effect element includes a magnetoresistance effect element including a first ferromagnetic metal layer in which a direction of magnetization is fixed, a second ferromagnetic metal layer configured for a direction of magnetization to be changed, and a nonmagnetic layer provided between the first ferromagnetic metal layer and the second ferromagnetic metal layer and a spin-orbit torque wiring extending in a first direction intersecting a lamination direction of the magnetoresistance effect element and joined to the second ferromagnetic metal layer. Furthermore, in the spin current magnetization rotational magnetoresistance effect element, the spin-orbit torque wiring containing a pure spin current generation part made of a material that generates a pure spin current and a low resistance part made of a material having electric resistance lower than electrical resistance of the pure spin current generation part.

A magnetoresistive memory device includes first electrode, a second electrode that is spaced from the first electrode, and a perpendicular magnetic tunnel junction layer stack located between the first electrode and the second electrode. The perpendicular magnetic tunnel junction layer stack includes a first texture-breaking nonmagnetic layer including a first nonmagnetic transition metal, a second texture-breaking nonmagnetic layer including a second nonmagnetic transition metal, a magnesium oxide dielectric layer located between the first and second texture-breaking nonmagnetic layers, a reference layer located between the first and second texture-breaking nonmagnetic layers, a free layer located between the first and second texture-breaking nonmagnetic layers, and a spinel layer located between the reference layer and the free layer, and including a polycrystalline spinel material having (001) texture along an axial direction extending between the reference layer and the free layer.

A magnetic device may include a layer stack. The layer stack may include a first ferromagnetic layer; a spacer layer on the first ferromagnetic layer; a second ferromagnetic layer on the spacer layer; and a dielectric barrier layer on the second ferromagnetic layer. In some examples, the layer stack may also include an additional ferromagnetic layer and an additional spacer layer. The magnetic device also may include a voltage source configured to apply a bias voltage across the layer stack to cause switching of a magnetic orientation of the second ferromagnetic layer without application of an external magnetic field.

A semiconductor device includes a semiconductor substrate; a vertical Hall element including a magnetosensitive portion, and formed in the semiconductor substrate; and an excitation wiring provided above a surface of the semiconductor substrate and apart from the magnetosensitive portion. The excitation wiring is formed of a single wiring with a plurality of turns. The excitation wiring includes a plurality of main wiring portions arranged side by side, and apart from one another in an overlapping region that overlaps the magnetosensitive portion as viewed in plan view from a direction orthogonal to the surface of the semiconductor substrate; and auxiliary wiring portions connecting each of the plurality of main wiring portions to one another in series.