In accordance with an embodiment, a diode comprises a substrate, a dielectric material including an opening that exposes a portion of the substrate, the opening having an aspect ratio of at least 1, a bottom diode material including a lower region disposed at least partly in the opening and an upper region extending above the opening, the bottom diode material comprising a semiconductor material that is lattice mismatched to the substrate, a top diode material proximate the upper region of the bottom diode material, and an active diode region between the top and bottom diode materials, the active diode region including a surface extending away from the top surface of the substrate.

A method of forming a semiconductor structure includes providing a substrate comprising a first material portion and a single crystal silicon layer on the first material portion. The substrate further comprises a major front surface, a major backside surface opposing the major front surface, and a plurality of grooves positioned in the major front surface. A buffer layer is deposited in one or more of the plurality of grooves. A semiconductor material is epitaxially grown over the buffer layer and in the one or more plurality of grooves, the epitaxially grown semiconductor material comprising a hexagonal crystalline phase layer and a cubic crystalline phase structure disposed over the hexagonal crystalline phase.

The invention relates to a method for laterally structuring a structured layer (2) with a plurality of three-dimensional structure elements (20), having the following steps: a) providing the structured layer with the three-dimensional structure elements; b) forming a laterally structured covering layer (3) on the structured layer in order to define at least one structured layer region (4) to be removed; and c) removing the structured layer region to be removed by means of a force acting on the structure elements in the region to be removed. The invention further relates to a semiconductor component (1).

A nano-structure semiconductor light emitting device includes a base layer formed of a first conductivity type semiconductor, and a first insulating layer disposed on the base layer and having a plurality of first openings exposing partial regions of the base layer. A plurality of nanocores is disposed in the exposed regions of the base layer and formed of the first conductivity-type semiconductor. An active layer is disposed on surfaces of the plurality of nanocores and positioned above the first insulating layer. A second insulating layer is disposed on the first insulating layer and has a plurality of second openings surrounding the plurality of nanocores and the active layer disposed on the surfaces of the plurality of nanocores. A second conductivity-type semiconductor layer is disposed on the surface of the active layer positioned to be above the second insulating layer.

After forming patterned dielectric material structures over a (100) silicon substrate, portions of the silicon substrate that are not covered by the patterned dielectric material structures are removed to provide a plurality of openings within the silicon substrate. Each opening exposes a surface of the silicon substrate having a (111) crystalline plane. A buffer layer is then formed on the exposed surfaces of the patterned dielectric material structures and the silicon substrate. A dual phase Group III nitride structure including a cubic phase region is formed filling a space between each neighboring pair of the patterned dielectric material structures and one of the openings located beneath the space. Finally, at least one Group III nitride layer is epitaxially deposited over the cubic phase region of the dual phase Group III nitride structure.

A step of forming, on a surface of a semiconductor structure layer, easily-to-be-etched portions arranged on the basis of crystal directions on the surface of the semiconductor structure layer and a step of subjecting the surface of the semiconductor structure layer to wet etching to form an uneven structure surface including a plurality of protrusions derived from a crystal structure of the semiconductor structure layer on the surface of the semiconductor structure layer are included.

Provided are electronic devices having quantum dots and methods of manufacturing the same. An electronic device includes a first nanorod, a quantum dot disposed on an upper surface of the first nanorod, and a second nanorod that covers a lateral surface of the first nanorod and the quantum dot. The first nanorod and the second nanorod are of opposite types.

Provided is a self-supporting polycrystalline GaN substrate composed of GaN-based single crystal grains having a specific crystal orientation in a direction approximately normal to the substrate. The crystal orientations of individual GaN-based single crystal grains as determined from inverse pole figure mapping by EBSD analysis on the substrate surface are distributed with tilt angles from the specific crystal orientation, the average tilt angle being 1 to 10. There is also provided a light emitting device including the self-supporting substrate and a light emitting functional layer, which has at least one layer composed of semiconductor single crystal grains, the at least one layer having a single crystal structure in the direction approximately normal to the substrate. The present invention makes it possible to provide a self-supporting polycrystalline GaN substrate having a reduced defect density at the substrate surface, and to provide a light emitting device having a high luminous efficiency.

The device according to the invention comprises a nanostructured LED with a first group of nanowires protruding from a first area of a substrate and a contacting means in a second area of the substrate. Each nanowire of the first group of nanowires comprises a p-i-n-junction and a top portion of each nanowire or at least one selection of nanowires is covered with a light reflecting contact layer. The contacting means of the second area is in electrical contact with the bottom of the nanowires, the light-reflecting contact layer being in electrical contact with the contacting means of the second area via the p-i-n-junction. Thus when a voltage is applied between the contacting means of the second area and the light-reflecting contact layer, light is generated within the nanowire. On top of the light-reflecting contact layer, a first group of contact pads for flip-chip bonding can be provided, distributed and separated to equalize the voltage across the layer to reduce the average serial resistance.

A lighting device for an automotive vehicle comprising at least two semiconductor light sources that can be selectively activated and at least one optic for shaping at least a portion of the light rays emitted by either or both of the light sources with the aim of generating at least two lighting and/or signaling functions. The device is configured so that a first function requires the activation of the first semiconductor light source and a second function requires the activation of the second semiconductor light source. At least one of the light sources is a semiconductor light-source comprising a light-emitting rods.