The present invention provides a TFT substrate structure, comprising a Switching TFT and a Driving TFT, and the Switching TFT comprises a first active layer, and the Driving TFT comprises a second active layer, and the first active layer and the second active layer are made by the same or different materials and the electrical properties of the Switching TFT and the Driving TFT are different. According to the different functions of the different TFTs, the present invention employs different working structures for the Switching TFT and the Driving TFT to respectively implement deposition and photolithography, and employs different materials for the active layers of the Switching TFT and the Driving TFT to differentiate the electrical properties of different TFTs in the TFT substrate. Accordingly, the accurate control to the OLED with lowest cost can be realized.

The present invention provides a TFT substrate structure, comprising a Switching TFT and a Driving TFT, and the Switching TFT comprises a first active layer, and the Driving TFT comprises a second active layer, and the first active layer and the second active layer are made by the same or different materials and the electrical properties of the Switching TFT and the Driving TFT are different. According to the different functions of the different TFTs, the present invention employs different working structures for the Switching TFT and the Driving TFT to respectively implement deposition and photolithography, and employs different materials for the active layers of the Switching TFT and the Driving TFT to differentiate the electrical properties of different TFTs in the TFT substrate. Accordingly, the accurate control to the OLED with lowest cost can be realized.

The present invention provides a TFT substrate structure, comprising a Switching TFT and a Driving TFT, and the Switching TFT comprises a first active layer, and the Driving TFT comprises a second active layer, and the first active layer and the second active layer are made by the same or different materials and the electrical properties of the Switching TFT and the Driving TFT are different. According to the different functions of the different TFTs, the present invention employs different working structures for the Switching TFT and the Driving TFT to respectively implement deposition and photolithography, and employs different materials for the active layers of the Switching TFT and the Driving TFT to differentiate the electrical properties of different TFTs in the TFT substrate. Accordingly, the accurate control to the OLED with lowest cost can be realized.

A thin film transistor array substrate includes a pixel electrode layout area, a data electrode layout area, a transparent pixel electrode layer formed in the pixel electrode layout area, a first metal layer, a first dielectric layer, an amorphous silicon layer, a second metal layer, a second dielectric layer formed in the pixel electrode layout area and the data electrode layout area. The first dielectric layer covers the first metal layer. The amorphous silicon layer, the second metal layer and the second dielectric layer are sequentially formed on the first dielectric layer. The transparent pixel electrode layer is connected to the second metal layer through a via hole formed in the pixel electrode area of the second dielectric layer. Moreover, a method for manufacturing the thin film transistor array and a liquid crystal display including the thin film transistor array substrate also are provided.

An array substrate and a manufacturing method thereof, a display panel, and a display device are provided. The array substrate includes a substrate; a source-drain metallic layer and a first passivation metallic protective layer formed in sequence on the substrate, the source-drain metallic layer including a source electrode and a drain electrode not contacted with each other; a conductive protection layer formed on the substrate on which the first passivation metallic protection layer has been formed; and a pixel electrode formed on the substrate on which the conductive protection layer has been formed, the pixel electrode contacting the conductive protection layer.

Methods of fabricating a thin-film transistor are provided. The methods include forming a gate electrode above a substrate, a gate insulating layer above the gate electrode, a non-crystalline silicon layer above the gate insulating layer, and a channel protective layer above the non-crystalline silicon layer. The non-crystalline silicon layer and the channel protective layer are processed to form a projecting part. The projecting part has an upper layer composed of the channel protective layer and a lower layer composed of the non-crystalline silicon layer. The projecting part and portions of the non-crystalline silicon layer on sides of the projecting part are irradiated with a laser beam to crystallize at least the non-crystalline silicon layer in the projecting part. An absorptance of the non-crystalline silicon layer for the laser beam is greater in the projecting part than in the portions on the sides of the projecting part.

A liquid crystal display device includes: a first substrate; a second substrate disposed opposite to the first substrate, where a display area and a non-display area are defined in each of the first and second substrates; a liquid crystal layer disposed between the first substrate and the second substrate; a common voltage line disposed in the non-display area of the first substrate; a light-shielding pattern disposed on the common voltage line and including an open portion, which at least partially exposes the common voltage line; and a dummy color layer disposed below the common voltage line and at least partially overlapping the open portion. The light-shielding pattern includes a first stepped portion disposed on a side of the open portion and a second stepped portion disposed on another side of the open portion, and the dummy color layer overlaps at least one of the first and second stepped portions.

A manufacturing method of a thin film transistor array panel according to an exemplary embodiment of the present invention includes forming an amorphous silicon thin film on a substrate. A lower region of the amorphous silicon thin film is crystallized to form a polycrystalline silicon thin film by irradiating a laser beam with an energy density of from about 150 mj/cm.sup.2 to about 250 mj/cm.sup.2 to the amorphous silicon thin film.

A thin film transistor, a manufacturing method thereof and an array substrate are provided. The thin film transistor includes a gate electrode, a gate insulation layer, an active layer, a source electrode and a drain electrode provided on a base substrate, and along a direction perpendicular to the base substrate, the source electrode and the drain electrode are respectively provided at opposite both sides of the active layer, and the source electrode and the drain electrode contacts the active layer.

A TFT array substrate is disclosed. The TFT array substrate includes a base, a display region disposed on the base, and a gate drive circuit region disposed on the base. The display region includes a plurality of data lines extending along a first direction, and a plurality of scan lines extending along a second direction, the scan lines intersecting and electrically insulated from the data lines. In addition, the gate drive circuit region includes at least one first capacitor, and a plurality of TFTs which are separated from each other to form a margin region between the TFTs, where the first capacitor is disposed in the margin region.