A method for fabricating single silicon carbide nanowires includes synthesizing silicon carbide using chemical vapor deposition; adding the silicone carbide to a solvent to form a suspension, sonicating the suspension, and separating a plurality of silicon carbide nanowires from the suspension after sonicating the suspension. Implementations of the method for fabricating single silicon carbide nanowires includes where synthesizing silicon carbide using chemical vapor deposition may include the introduction of silicon vapor, or adjusting a pH or maintaining a constant volume during the solution process. A bottom-gate transistor, or other integrated circuits may include layers having one or more of a plurality of silicon carbide nanowires positioned between the source and the drain.

A thin-film transistor to be used for a radiation sensor is disclosed. The thin-film transistor includes a gate electrode, an oxide semiconductor layer, and a gate insulating film located between the oxide semiconductor layer and the gate electrode. The gate insulating film includes a silicon nitride layer, and a silicon oxide layer located between the silicon nitride layer and the oxide semiconductor layer and having interfaces with the silicon nitride layer and the oxide semiconductor layer. The silicon oxide layer has a thickness not less than 1 nm and not more than 4 nm.

There is provided a display device including: a light emitting element; and a drive transistor (DRTr) that includes a coupling section (W1) and a plurality of channel sections (CH) coupled in series through the coupling section (W1), wherein the drive transistor (DRTr) is configured to supply a drive current to the light emitting element.

A thin film transistor substrate includes a substrate and a bottom gate-type thin film transistor, in which a gate insulating film is provided, a gate electrode is made of a first conductive film disposed on a lower layer side of the gate insulating film, the gate insulating film includes a first insulating portion overlapping the gate electrode and a second insulating portion that is disposed not to overlap the gate electrode but to overlap the source electrode and the drain electrode, and has a film thickness greater than a film thickness of the first insulating portion, and a lower layer portion that is made of a lower layer film disposed on a lower layer side of the first conductive film and has at least a portion overlapping the gate electrode is provided.

Disclosed are a display panel and a display device including a thin film transistor that is disposed on a substrate and includes an active portion. The display panel further includes a first insulating layer disposed on a side of the active portion away from the substrate, and a protective portion disposed on a side of the first insulating layer away from the substrate. An orthographic projection of the protective portion on the substrate at least partially covers an orthographic projection of the active portion on the substrate. The protective portion includes a hydrogen blocking portion and a hydrogen trapping portion stacked in a direction perpendicular to the substrate.

Disclosed transistor structures include a gate electrode, an active layer, a gate dielectric layer separating the active layer from the gate electrode, a source electrode, a drain electrode, and a hydrogen-rich material layer separating the source electrode and the drain electrode from the active layer. The presence of hydrogen in the hydrogen-rich material layer may act to reduce contact resistances and Schottky barriers between the source electrode and the active layer, and between the drain electrode and the active layer, thus leading to improved device performance. The disclosed transistor structures may be formed in a BEOL process and may be incorporated with other BEOL circuit components. As such, the disclosed transistor structures may include materials that may be processed at low temperatures and thus, may not damage previously fabricated devices.

A driving substrate is provided. The driving substrate includes a substrate and a thin film transistor disposed on the substrate. The thin film transistor includes a first metal layer, a second metal layer, and a semiconductor. The first metal layer has a first portion, a second portion, and a first bridge. The second metal layer has a third portion, a fourth portion, and a second bridge. The first metal layer is overlapped with the second metal layer and the semiconductor. In a top view, the first portion and the second portion are separated by a first gap and are connected by the first bridge, the third portion and the fourth portion are separated by the first gap and are connected by the second bridge.

An organic light-emitting diode display is disclosed. In one aspect, the display includes a display unit located on the substrate and including a display area and a non-display area surrounding the display area, and a thin film encapsulation layer sealing the display unit. The display also includes a voltage line formed in the non-display area and surrounding the display area, a metal layer formed of the same material as the voltage line, and a dam surrounding the display area and contacting the voltage line. The voltage line includes a first voltage line disposed in one side of the display area. The first voltage line includes a pair of first end portions and a pair of first connectors respectively connected to the pair of first end portions and extending away from the display area. The metal layer is disposed between the pair of first connectors. The dam contacts the metal layer.

An oxide semiconductor film includes a plurality of crystal grains over a substrate. The oxide semiconductor film includes indium and a first metal element selected from the group consisting of aluminum (Al), gallium (Ga), yttrium (Y), scandium (Sc), and lanthanoid elements. When a crystal orientation at each of a plurality of measurement points of the oxide semiconductor film is obtained based on an electron diffraction pattern obtained by transmitting an electron beam irradiated from a direction intersecting a thickness direction of the oxide semiconductor film, an average value of KAM values calculated at the plurality of measurement points is greater than or equal to 0.3 degrees.

An oxide semiconductor layer which is intrinsic or substantially intrinsic and includes a crystalline region in a surface portion of the oxide semiconductor layer is used for the transistors. An intrinsic or substantially intrinsic semiconductor from which an impurity which is to be an electron donor (donor) is removed from an oxide semiconductor and which has a larger energy gap than a silicon semiconductor is used. Electrical characteristics of the transistors can be controlled by controlling the potential of a pair of conductive films which are provided on opposite sides from each other with respect to the oxide semiconductor layer, each with an insulating film arranged therebetween, so that the position of a channel formed in the oxide semiconductor layer is determined.