An aspect of the present disclosure is a method that includes, in a first mixture that includes a metal alkoxide and water, reacting at least a portion of the metal alkoxide and at least a portion of the water to form a second mixture that includes a solid metal oxide phase dispersed in the second mixture, applying the second mixture onto a surface of a device that includes an intervening layer adjacent to a perovskite layer such that the intervening layer is between the second mixture and perovskite layer, and treating the second mixture, such that the solid metal oxide phase is transformed to a first solid metal oxide layer such that the intervening layer is positioned between the first solid metal oxide layer and the perovskite layer.

Urethane (multi)-(meth)acrylate (multi)-silane compositions, and articles including a (co)polymer reaction product of at least one urethane (multi)-(meth)acrylate (multi)-silane precursor compound. The disclosure also articles including a substrate, a base (co)polymer layer on a major surface of the substrate, an oxide layer on the base (co)polymer layer; and a protective (co)polymer layer on the oxide layer, the protective (co)polymer layer including the reaction product of at least one urethane (multi) (meth)acrylate (multi)-silane precursor compound. The substrate may be a (co)polymeric film or an electronic device such as an organic light emitting device, electrophoretic light emitting device, liquid crystal display, thin film transistor, or combination thereof. Methods of making urethane (multi)-(meth)acrylate (multi)-silane precursor compounds and their use in composite multilayer barrier films are also described. Methods of using such barrier films in articles selected from a solid state lighting device, a display device, and combinations thereof, are also described.

Solid-state image-pickup devices (10), including: at least one first photoelectric conversion section (11B, 11R) disposed in a substrate (11); a second photoelectric conversion section (11G) disposed over the substrate and including an organic photoelectric conversion layer (16); and an ultraviolet protective film (18) that covers a light incident surface of the organic photoelectric conversion layer, and methods of producing the same.

Provided is a light receiving device including a transparent electrode and a method of manufacturing the light receiving device. A transparent electrode is formed so as to be in contact with a photoelectric conversion layer which absorbs light to generate electric energy, and the transparent electrode is formed by using a resistance change material which has high transmittance with respect to light in the entire wavelength range and of which resistance state is to be changed from a high resistance state into a low resistance state if a voltage exceeding a threshold voltage inherent in the resistance change material so that conducting filaments are formed in the transparent electrode. Accordingly, since the transparent electrode has high transmittance characteristic with respect to the light in the entire wavelength range and high conductivity characteristic, the light receiving device also has high photoelectric conversion efficiency and good electric characteristics.

An image sensor comprising: a first layer having a plurality of groups of photodiodes formed in a semiconductor substrate, each group representing a 2×2 array of photodiodes, with 2 first pixels configured to detect light of a first wavelength and 2 second pixels configured to detect light of a second wavelength, each first pixel positioned adjacent to the second pixels; and a second layer overlapping the first layer, the second layer is organic, having a plurality of organic photodiodes configured to detect light of a third wavelength, each organic photodiode positioned to partially overlap 2 first photodiodes and 2 second photodiodes of the first layer.

In various embodiments, an optoelectronic component is provided. The optoelectronic component may include a first electrode having a first electrically conductive substance, a second electrode having a second electrically conductive substance, and at least one active substance. The active substance is formed within a current path of the first electrode and/or the second electrode, and the active substance is set up to convert the first electrically conductive substance and/or the second electrically conductive substance to an electrically nonconductive substance or region.

A detection apparatus is provided for detection of x-ray radiation, with a lower layer arranged between a lower electrode and a middle electrode. In an embodiment, the lower layer includes at least one first perovskite. In an embodiment, a first voltage is able to be applied between the lower electrode and the middle electrode; and an upper layer is arranged between an upper electrode and the middle electrode. The upper layer features at least one second perovskite and a second voltage is able to be applied between the upper electrode and the middle electrode. Finally, an evaluation device, which is coupled to the upper layer and the lower layer, is embodied to detect an interaction of x-ray radiation with the first perovskite and an interaction of x-ray radiation with the second perovskite.

Disclosed is a transparent electrode including a transparent substrate 100, conductive nanowires 10 forming networks, nanoparticles bonding the nanowires 10, and a conductive layer embedded in the transparent substrate 100.

There are provided a transparent conductive film, as well as a heater, a touch panel, a solar battery, an organic EL device, a liquid crystal device, and an electronic paper that are provided with the transparent conductive film, the transparent conductive film being capable of easing a decline in optical transmittance when graphene is laminated, and of achieving optical transmittance higher than an upper limit of optical transmittance of a single layer of graphene. The transparent conductive film includes a single-layered conductive graphene sheet. The single-layered conductive graphene sheet includes a first region and a second region, the first region being configured of graphene, and the second region being surrounded by the first region and having optical transmittance that is higher than optical transmittance of the first region.

Various embodiments may relate to an electronic structure, including at least one organic layer, at least one metal growth layer grown onto the organic layer, and at least one metal layer grown on the metal growth layer. The at least one metal growth layer contains germanium. Various embodiments further relate to a method for producing the electronic structure.