An electronic device includes: an electronic component including an inertial element, a base including a substrate to which the inertial element is fixed and a frame portion provided to surround the inertial element in a plan view, a first lid bonded to the frame portion so as to accommodate the inertial element between the first lid and the base, a second lid provided to face the first lid, and a bonding member disposed between the first lid and the second lid; and a molded portion covering the electronic component.

The present disclosure relates to an electromechanical actuator, having a stack arrangement made of ceramic basis material having electromechanical properties and electrodes as well as a ceramic insulation for operation/use of the actuator in a humid environment. To ensure a long service life of the actuator with increased electromechanical expansion, an exemplary structure of the ceramic insulation has a smaller average grain size than the structure of the ceramic basis material. A method for the production of an actuator having ceramic insulation and a method for controlling such an actuator are also disclosed.

A flexible piezoelectric thin film, and method of manufacture, has a polyvinyl alcohol (PVA)-glycine-PVA sandwich heterostructure. The thin film is manufactured by evaporating the solvent from a glycine-PVA mixture solution. The film automatically assembles into the PVA-glycine-PVA sandwich heterostructure as it is salted out. Strong hydrogen bonding between the oxygen atoms in glycine and hydroxyl groups on PVA chains are responsible for the nucleation and growth of the piezoelectric γ-glycine and alignment of the domain orientation.

A method for applying a waterproof coating to a transducer component includes the steps of cleaning and promoting bonding on the transducer component by immersing the component in a mixture of isopropyl alcohol, deionized water, and siline. The component is then air dried and rinsed in pure isopropyl alcohol. After drying, the component is vacuum baked and subjected to a vacuum for twelve hours. A parylene coating is provided to the component surface. The parylene coating is abraded, and the surface is rinsed with pure isopropyl alcohol. After drying, polyurethane is provided on the abraded parylene surface. The polyurethane is cured to form a waterproof coating on the transducer component. In further embodiments, a second parylene coating can be provided outside the polyurethane.

An integrated structure of a crystal resonator and a control circuit (110) and an integrated method therefor. Integration of the crystal resonator with the control circuit (110) is accomplished by forming, in a device wafer (100) containing the control circuit, a lower cavity (120) with an opening exposed at a back side of the device wafer (100), forming a piezoelectric vibrator (500) on the back side of the device wafer (100) and electrically connecting the piezoelectric vibrator (500) to the control circuit (110) in the device wafer (100) from the back side of the device wafer (100). The crystal resonator is more compact in size, less power-consuming and easier to integrate with other semiconductor components with a higher degree of integration.

A package that includes a first filter comprising a first polymer, a substrate cap, a second filter comprising a second polymer frame, at least one interconnect, an encapsulation layer and a plurality of through encapsulation vias. The substrate cap is coupled to the first polymer frame such that a first void is formed between the substrate cap and the first filter. The second polymer frame is coupled to the substrate cap such that a second void is formed between the substrate cap and the second filter. The at least one interconnect is coupled to the first filter and the second filter. The encapsulation layer encapsulates the first filter, the substrate cap, the second filter, and the at least one interconnect. The plurality of through encapsulation vias coupled to the first filter.

A semiconductor device includes a base, a detector on the base and including a first surface on which a detection portion is provided, and a resin package on the base and including an exposure hole to externally expose the detection portion of the detector. At least a portion of an outer peripheral edge of the first surface of the detector is exposed in the exposure hole. The resin package includes a depressed portion along the portion of the outer peripheral edge that is exposed in the exposure hole.

A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. Patterned electrodes are deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the electrodes and a planarized support layer is deposited over the sacrificial layer. The device can include temperature compensation layers (TCL) that improve the device TCF. These layers can be thin layers of oxide type materials and can be configured between the top electrode and the piezoelectric layer, between the bottom electrode and the piezoelectric layer, between two or more piezoelectric layers, and any combination thereof. In an example, the TCLs can be configured from thick passivation layers overlying the top electrode and/or underlying the bottom electrode.

A piezoelectric element, a piezoelectric vibrator and a manufacturing method thereof, and an electronic device, a piezoelectric structure is arranged on a first electrode, and a second electrode is arranged on the piezoelectric structure, wherein the second electrode includes a conductive layer and an anti-oxidation layer arranged on the piezoelectric structure in sequence. The conductive layer is configured to generate, when a breakdown short circuit occurs in the piezoelectric element, solid solution between a breakdown location of the piezoelectric element and anti-oxidation layer, and oxidize to generate an insulating material. The conductive layer and anti-oxidation layer are used as top electrodes of the piezoelectric element, when the breakdown short circuit occurs in the piezoelectric structure of the piezoelectric element, the conductive layer is melted by a huge amount of heat generated by the short circuit, a solid solution is formed by the anti-oxidation layer and the conductive layer.

A surface acoustic wave (SAW) device including a substrate is provided. Multiple surface acoustic wave elements are disposed on the substrate. A conductive surrounding structure includes: a wall part, disposed on the substrate and surrounding the surface acoustic wave elements; and a lateral layer part, disposed on the wall part. The lateral layer part has an opening above the surface acoustic wave elements. A cap layer covers the lateral layer part and closes the opening.