A microfluidic substrate and a manufacture method thereof, and a microfluidic panel are provided. The microfluidic substrate includes a base substrate, an acoustic wave generation device, and a first switching circuit. The acoustic wave generation device is on the base substrate and configured to emit an acoustic wave to drive a liquid droplet to move over the microfluidic substrates, the acoustic wave generation devices includes an acoustic wave driving electrode and an acoustic wave generation layer, the first switching circuit is on the base substrate, and the first switching circuit is electrically connected to the acoustic wave driving electrode and is configured to transmit an acoustic wave driving signal to the acoustic wave driving electrode, and the acoustic wave driving electrode is configured to drive the acoustic wave generation layer to generate the acoustic wave under control of the acoustic wave driving signal.

An interventional device (100, 200, 300) includes an elongate shaft (101) having a longitudinal axis A-A′, an ultrasound transducer (102), an adhesive layer (103), and a protective tube (104) formed from a protective tube (104) formed from a heat-shrink material. The ultrasound transducer (102) is disposed on the elongate shaft (101) such that the ultrasound transducer (102) has an axial extent L along the longitudinal axis A-A′, At least along the axial extent L of the adhesive layer (103) is disposed between the ultrasound transducer (102) and the protective tube (104) surrounds the ultrasound transducer (102) and the adhesive layer (103) is disposed between the ultrasound transducer (102) and the protective tube (104).

Electromechanical transducer (1, 21, 28) having a layer structure comprising, in this order: a first layer (2) which has, in at least one plane, at least one outwardly insulated, structured, electrically conductive region (3) acting as an electrical shield, a second layer (6) serving as an adhesive layer, which is electrically conductive at least at certain points, a third layer (13, 22) comprising an electromechanical functional element, a fourth layer (15, 23) serving as an adhesive layer, which is electrically conductive at least at certain points, a fifth layer (17, 24), which has, in at least one plane, at least one outwardly insulated structured electrically conductive region (18) acting as an electrical shield. In addition, a method for manufacturing such an electromechanical transducer (1, 21, 28) is described.

The present application relates to stacked piezoelectric composites comprising piezoelectric structures. Suitably, the composites are useful as tissue-stimulating implants, including spinal fusion implants. The present application also relates to methods of making stacked piezoelectric composites.

A wafer level package comprises a functional wafer with a first surface, device structures connected to device pads arranged on the first surface. A cap wafer, having an inner and an outer surface, is bonded with the inner surface to the first surface of the functional wafer. A frame structure surrounding the device structures is arranged between functional wafer and cap wafer. Connection posts are connecting the device pads on the first surface to inner cap pads on the inner surface. Electrically conducting vias are guided through the cap wafer connecting inner cap pads on the inner surface and package pads on the outer surface of the cap wafer.

The present disclosure provides an ultrasonic transducer and a method for manufacturing an ultrasonic transducer, a display substrate and a method for manufacturing a display substrate. The method for manufacturing the ultrasonic transducer includes: forming a via hole in a substrate; forming a structural layer on a side of the substrate, the structural layer cover the via hole; and etching the structural layer from a side of the substrate away from the structural layer by using the substrate formed with the via hole as a blocking layer, to form a cavity at a position of the structural layer corresponding to that of the via hole.

In one aspect of the disclosure, a semiconductor package is disclosed. The semiconductor package includes a lead frame. A semiconductor die is attached to a first side of the lead frame. A protective shell covers at least a first portion of the first surface of the semiconductor die. The protective shell comprises of ink residue. A layer of molding compound covers an outer surface of the protective shell and exposed portion of the first surface of the semiconductor die. A cavity space is within an inner space of the protective shell and the first portion of the top surface of the semiconductor die.

A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. A first patterned electrode is deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the first electrode and a planarized support layer is deposited over the sacrificial layer, which is then bonded to a substrate wafer. The crystalline substrate is removed and a second patterned electrode is deposited over a second surface of the film. The sacrificial layer is etched to release the air reflection cavity. Also, a cavity can instead be etched into the support layer prior to bonding with the substrate wafer. Alternatively, a reflector structure can be deposited on the first electrode, replacing the cavity.

An example of a cavity structure comprises a cavity substrate comprising a substrate surface, a cavity extending into the cavity substrate, the cavity having a cavity bottom and cavity walls, and a cap disposed on a side of the cavity opposite the cavity bottom. The cavity substrate, the cap, and the one or more cavity walls form a cavity enclosing a volume. A component can be disposed in the cavity and can extend above the substrate surface. The component can be a piezoelectric or a MEMS device. The cap can have a tophat configuration. The cavity structure can be micro-transfer printed from a source wafer to a destination substrate.

An example of a cavity structure comprises a cavity substrate comprising a substrate surface, a cavity extending into the cavity substrate, the cavity having a cavity bottom and cavity walls, and a cap disposed on a side of the cavity opposite the cavity bottom. The cavity substrate, the cap, and the one or more cavity walls form a cavity enclosing a volume. A component can be disposed in the cavity and can extend above the substrate surface. The component can be a piezoelectric or a MEMS device. The cap can have a tophat configuration. The cavity structure can be micro-transfer printed from a source wafer to a destination substrate.