H10D86/0212

Method for fabricating display panel
09711542 · 2017-07-18 · ·

A method for fabricating a display panel includes forming a first patterned conductive layer, a gate insulation layer, a semiconductor channel layer, a first passivation layer, a second patterned conductive layer and a pixel electrode on a first substrate. The first patterned conductive layer includes a gate electrode, and the second patterned conductive layer includes a source electrode, a drain electrode and a data line. The patterns of the gate insulation layer, the first passivation layer and the second patterned conductive layer are defined by an etching process and a lift-off process with the same photomask.

Array substrate and its manufacturing method and display device
09709864 · 2017-07-18 · ·

An array substrate and its manufacturing method, and a display device are disclosed, and the array substrate includes a black matrix (200) disposed on a base substrate (100) and has a plurality of pixel units arranged in an array, the orthographic projection of the pattern of the black matrix (200) on the base substrate at least partially covers the gap between adjacent pixel units, and the surface of at least a portion of the black matrix (200) has a first concave-convex structure (A) capable of reflecting the light irradiated to the surface of the black matrix (200) in diffuse reflection. Because the first concave-convex structure (A) of the surface of the black matrix (200) has a diffuse reflection effect, the external light will be subjected to diffuse reflection when irradiated to the surface of the black matrix (200), thereby reducing the light intensity of the reflected light, enhancing the visibility of the area of each of the pixel units of the array substrate, and improving the display effect of picture.

Array Substrate And Manufacturing Method For The Same, And Display Device
20170199441 · 2017-07-13 ·

The present disclosure relates to an array substrate and manufacturing method for the same, and a display device. The array substrate comprises a plurality of pixel regions, a plurality of gate lines, and a plurality of data lines. The gate line and the data line are respectively connected to corresponding pixel regions. The pixel region comprises a common electrode and a pixel electrode arranged correspondingly. The array substrate also comprises a plurality of shield electrodes. The shield electrode is arranged to shield an electric field generated by a current flowing through the corresponding gate line. The shield electrode and the common electrode are arranged on the same layer and are insulated from each other. Since the shield electrode and the common electrode are insulated from each other, a change in the electrical signal in the shield electrode does not affect the common electrode.

DISPLAY DEVICE INCLUDING ALIGNMENT LAYER DEFINING GROOVES AND MANUFACTURING METHOD THEREOF
20170199437 · 2017-07-13 ·

A display device includes: a substrate; a thin film transistor on the substrate; a pixel electrode connected to the thin film transistor; a common electrode overlapping the pixel electrode; an insulating layer between the pixel electrode and the common electrode; a roof layer spaced apart from the pixel electrode; a microcavity provided in plurality each defined between the roof layer and the pixel electrode spaced apart from each other; a first alignment layer between the microcavity and the pixel electrode and defining an upper surface thereof adjacent to the microcavity which defines a first groove of the first alignment layer; a second alignment layer between the microcavity and the roof layer and defining an upper surface thereof opposing the microcavity which defines a second groove of the second alignment layer; and an optical medium layer disposed in the plurality of microcavities.

Display device and manufacturing method thereof

A manufacturing method includes forming a gate member and a common electrode line on a substrate. A gate insulating layer is formed on the gate member and the common electrode line. A semiconductor member and a data member are formed on the gate insulating layer. A first passivation layer is formed on the semiconductor member and the data member. A plurality of color filters is formed on the first passivation layer. A conductor layer and a second passivation layer are formed on the plurality of color filters. A first contact hole exposes a common electrode. A second contact hole exposes the drain electrode. The first and second contact holes are formed by a photolithography process. A pixel electrode connected to the drain electrode is formed through the first contact hole. A connecting member connected to the common electrode line and the common electrode is formed through the second contact hole.

Display device and method for manufacturing the same

A display device and a method for manufacturing the same are provided. The display device includes a first substrate, a second substrate and a light curable sealant. The first substrate has a displaying area and a non-displaying area, in which the displaying area includes a pixel array, and the non-displaying area includes a driving circuit. The driving circuit includes at least a capacitor which is made of transparent conductive material. The second substrate has an opaque area. The light curable sealant is located between the first substrate and the second substrate. When viewing from a normal vector of the first substrate or the second substrate, the light curable sealant, the capacitor and the opaque area are at least partially overlapped with each other.

Display panel and method of preparing the same, display device

A display panel, a preparing method thereof and a display device are provided. The method of preparing a display panel includes steps of: coating an alignment material on both a display region of an array substrate and an electrode region of the array substrate located around a periphery of the display region; aligning the alignment material; assembling the aligned array substrate and an aligned color filter substrate into an assembly; cutting the assembly of the array substrate and the color filter substrate into a plurality of display panel units, such that the electrode region of the array substrate is not covered by the color filter substrate in each of the display panel units; and removing the alignment material covering the electrode region of the array substrate so as to expose the electrode region.

Semiconductor Device and Method for Manufacturing the Same

A semiconductor device includes a pixel electrode and a transistor which includes a first gate electrode, a first insulating layer over the first gate electrode, a semiconductor layer over the first insulating layer, a second insulating layer over the semiconductor layer, and a second gate electrode. The pixel electrode and the second gate electrode are provided over the second insulating layer. The first gate electrode has a region overlapping with the semiconductor layer with the first insulating layer provided therebetween. The second gate electrode has a region overlapping with the semiconductor layer with the second insulating layer provided therebetween. A first region is at least part of a region where the second gate electrode overlaps with the semiconductor layer. A second region is at least part of a region where the pixel electrode is provided. The second insulating layer is thinner in the first region than in the second region.

Electrically conductive structure and manufacturing method thereof, array substrate, display device
20170194361 · 2017-07-06 ·

The present disclosure provides an electrically conductive structure and a manufacturing method thereof, an array substrate, and a display device. The manufacturing method of the electrically conductive structure including: forming stacked layers of electrically conductive films on a substrate; performing patterning process to the layers of electrically conductive films to form an electrically conductive structure with a preset pattern, an edge of the electrically conductive structure being a step-shaped structure.

METHOD OF FABRICATING ARRAY SUBSTRATE

A method of fabricating an array substrate including forming an oxide semiconductor layer on a substrate; sequentially forming a gate insulating layer and a gate electrode corresponding to a central portion of the oxide semiconductor layer; forming source and drain areas having conductive properties in the oxide semiconductor layer by irradiating X-rays or UV rays to the oxide semiconductor layer exposed outside the gate electrode; forming an inter insulating layer on the gate electrode and having first contact holes that expose the source and drain areas; and forming source and drain electrodes on the inter insulating layer and contacting the source and drain areas through the first contact holes, respectively.