A method of manufacturing a thin-film transistor includes forming an oxide semiconductor on a substrate, stacking an insulating layer and a metal layer on the substrate to cover the oxide semiconductor, forming a photosensitive pattern on the metal layer, forming a gate electrode by etching the metal layer using the photosensitive pattern as a mask, where a part of the gate electrode overlaps a first oxide semiconductor region of the oxide semiconductor, forming a gate insulating film by partially etching the insulating layer using the photosensitive pattern as a mask, where the gate insulating film includes a first insulating region with a first thickness under the photosensitive pattern and a second insulating region with a second thickness less than the first thickness, and performing plasma processing on the gate insulating film so that a second oxide semiconductor region of the oxide semiconductor under the second insulating region becomes conductive.

A high-performance TFT substrate for a flat panel display includes a substrate, a first conductive layer on the substrate, a semiconductor layer positioned on the first conductive layer, and a second conductive layer positioned on the semiconductor layer. The first conductive layer defines a gate electrode. The second conductive layer defines a source electrode and a drain electrode spaced apart from the source electrode. The second conductive layer includes a first layer on the semiconductor layer and a second layer positioned on the first layer. The first layer can be made of metal oxide. The second layer can be made of aluminum or aluminum alloy.

Embodiments of the present invention disclose an array substrate and a manufacturing method thereof, a display device, which relates to the display field, and can increase transmittance of the product, and also has improvement effect to defects such as crosstalk, flicker, etc. An embodiment of the present invention provides an array substrate, comprising: a substrate, a data line, a gate line, a thin film transistor and a pixel electrode formed on the substrate, the thin film transistor comprises a gate insulating layer, a part of the gate insulating layer corresponding to a light-transmissive area of a pixel is removed.

The present invention provides a pixel structure and a manufacturing method thereof. The pixel structure includes: a transparent substrate (60), a gate line formed on the transparent substrate (60), a thin-film transistor formed on the transparent substrate (60), a data line (68) formed on the transparent substrate (60), a pixel electrode (62) formed on the transparent substrate (60) and the thin-film transistor, a passivation layer (64) formed on the pixel electrode (62), the transparent substrate (60), and the data line (68), and a common electrode (66) formed on the passivation layer (64). The passivation layer (64) includes: a first portion (72) located on the data line (68), a second portion (74) located on the pixel electrode (62), and a third portion (76) located on the transparent substrate (60) and arranged on two opposite sides of the data line (68). The first portion (72) of the passivation layer (64) has a thickness greater than a thickness of the second portion (74).

A thin film transistor array panel according to an exemplary embodiment of the present invention includes: an insulating substrate; a polycrystal semiconductor layer formed on the insulating substrate; a buffer layer formed below the polycrystal semiconductor layer and containing fluorine; a gate electrode overlapping the polycrystal semiconductor layer; a source electrode and a drain electrode overlapping the polycrystal semiconductor layer and separated from each other; and a pixel electrode electrically connected to the drain electrode.

The present disclosure provides a touch panel, a manufacturing method thereof and a touch display device. The method comprises: 1) forming touch lines, comprising: forming in the same layer gate lines and a plurality of first touch lines, each first touch line being arranged intermittently in a direction of data lines and not electrically connected with the gate lines, and forming in the same layer a plurality of first connection lines and electrodes not in the same layer as the gate lines and the touch electrodes, each first connection line being used for connecting in series with an intermittent first touch line, each touch line comprising a first touch line and a plurality of first connection lines; and 2) forming touch electrodes, each touch electrode being electrically connected with one or more first touch lines, one or more second touch lines, or one or more third touch lines.

An opto-electronic apparatus and a manufacturing method thereof are disclosed. The manufacturing method of the opto-electronic apparatus includes the following steps of: disposing a matrix circuit on a substrate, wherein the matrix circuit has a matrix circuit thickness between the highest point of the matrix circuit and the surface of the substrate; disposing a plurality of first protrusions above the substrate, wherein at least one of the first protrusions has a first protrusion thickness between the highest point of the first protrusion and the surface of the substrate, and the first protrusion thickness is greater than the matrix circuit thickness; and performing a transfer step for transferring a plurality of first opto-electronic units from a first carrier to the first protrusions and bonding the first protrusions to at least two of the first opto-electronic units with an adhesive material.

An organic light emitting display device may include: a cell array comprising gate lines and data lines intersecting each other on a substrate so as to define a plurality of pixel areas, a plurality of thin film transistors formed at intersections between the gate lines and the data lines to correspond to the plurality of pixel areas, and a protective film evenly formed over the substrate to cover the thin film transistors; a plurality of first electrodes formed such that portions of an metal oxide layer corresponding to emission areas of the respective pixel areas, is made conductive, the metal oxide layer evenly disposed on the protective film; a bank constituting the remaining portion of the metal oxide layer in which the first electrodes are not formed and formed so as to have insulating properties; an emission layer formed over the metal oxide layer; and a second electrode formed on the emission layer so as to face the first electrodes.

An array substrate and manufacturing method thereof, a display device are provided. The array substrate includes a display region and a non-display region; the non-display region includes a first laminated structure and a second laminated structure that are separately disposed on a base substrate, a gap between the first laminated structure and the second laminated structure constitutes a connecting hole; the first laminated structure includes a first via hole provided for exposing a first metal layer, the second laminated structure includes a second via hole provided for exposing a second metal layer, the first via hole and the second via hole are connected to a connecting hole via breaches on corresponding walls, and the first metal layer and the second metal are electrically connected with a conductive film.

A TFT display device and a method for producing the device are disclosed. The TFT display device includes: a first metal layer, on which a first silicon nitride film is deposited; a second metal layer deposited on the first silicon nitride film and etched to form a pattern, wherein a second silicon nitride film is deposited on the second metal film; and a via hole, wherein the first metal layer and/or the second metal layer are disconnected in the overlapping region. The first silicon nitride layer and the second silicon nitride layer are etched to form the via hole On the disconnected position, and an ITO conductive film is deposited to electrically connect the disconnected position. According to the present invention, by means of the above-mentioned way, the TFT display device will have less damage by ESD. The yield rate of the product is increased, and the product competitiveness is enhanced.