Systems are described. A system includes a silicon backplane having a top surface, a bottom surface, and side surfaces and a substrate surrounding the side surfaces of the silicon backplane. The substrate has a top surface, a bottom surface and side surfaces. At least one bond pad is provided on the bottom surface of the substrate. A metal layer is provided on the bottom surface of the substrate and the bottom surface of the silicon backplane and has a first portion electrically and thermally coupled to the bottom surface of the silicon backplane in a central region and second portions that extend between a perimeter region of the silicon backplane and the at least one bond pad. An array of metal connectors is provided on the top surface of the silicon backplane.

The present invention relates to an optical device and a method for manufacturing the same. The technical object of the invention is to realize a surface emitting body which allows heat generated from a light-emitting chip to be easily dissipated, eliminates the need for an additional wiring layer, and allows a singular light emitting chips or a plurality of light emitting chips to be arranged in series, in parallel, or in series-parallel. The present invention discloses an optical device comprising: a substrate; a plurality of light emitting chips disposed on the substrate; a plurality of conductive wires which electrically connect the substrate with the light emitting chips such that the plurality of light emitting chips are connected to each other in series, in parallel or in series-parallel; and a protective layer which covers the plurality of light emitting chips and the plurality of conductive wires on the substrate.

A flip-chip high-voltage light-emitting device includes: a light emitting module composed of a plurality of flip-chip light emitting units in series with a first surface and a second surface opposite to each other, wherein, gap is formed between flip-chip light emitting units, and each comprises an n-type semiconductor layer, a light emitting layer and a p-type semiconductor layer; a light conversion layer on the first surface of the light emitting module that covers side surfaces of light emitting units; an insulation layer that covers the second surface of the entire light emitting module and is only exposed to the n-type semiconductor layer in the first light emitting unit and the p-type semiconductor layer in the last light emitting unit of the light emitting module; a first support electrode and a second support electrode on the insulation layer.

Standardized photon building blocks are packaged in molded interconnect structures to form a variety of LED array products. No electrical conductors pass between the top and bottom surfaces of the substrate upon which LED dies are mounted. Microdots of highly reflective material are jetted onto the top surface. Landing pads on the top surface of the substrate are attached to contact pads disposed on the underside of a lip of the interconnect structure. In a solder reflow process, the photon building blocks self-align within the interconnect structure. Conductors in the interconnect structure are electrically coupled to the LED dies in the photon building blocks through the contact pads and landing pads. Compression molding is used to form lenses over the LED dies and leaves a flash layer of silicone covering the landing pads. The flash layer laterally above the landing pads is removed by blasting particles at the flash layer.

A flip-chip light emitting device includes: a light-emitting epitaxial laminated layer with two opposite surfaces, in which, the first surface is a light-emitting surface; a first electrode and a second electrode that are separated from each other on the second surface of the light-emitting epitaxial laminated layer; a non-conductive substrate with two opposite surfaces and two side walls connecting those two surfaces, in which, the first surface is connected to the light-emitting epitaxial laminated layer through the first and the second electrodes; a first external electrode and a second external electrode on the second surface of the non-conductive substrate, which extend to the side walls of the non-conductive substrate till and at least cover parts of the side walls of the first and the second electrodes to form electrical connection.

Embodiments of a silicon heat-dissipation package for compact electronic devices are described. In one aspect, a device includes first and second silicon cover plates. The first silicon cover plate has a first primary side and a second primary side opposite the first primary side thereof. The second silicon cover plate has a first primary side and a second primary side opposite the first primary side thereof. The first primary side of the second silicon cover plate includes an indentation configured to accommodate an electronic device therein. The first primary side of the second silicon cover plate is configured to mate with the second primary side of the first silicon cover plate when the first silicon cover plate and the second silicon cover plate are joined together with the electronic device sandwiched therebetween.

A protective covering configured for use with a mobile electronics device, including a front wall and a plurality of side walls defining a primary cavity. A back wall is disposed within the primary cavity separating the primary cavity into a protective covering electronics housing cavity and a mobile electronic device housing cavity. One or more apertures are disposed within the front wall. A light source is disposed within the protective covering electronics housing cavity, wherein at least a portion of the light source is disposed outside of the protective covering electronics housing cavity and through at least one of the one or more apertures in the front wall. A heat sink is disposed within the protective covering electronics housing cavity and in contact with the light source.

The present disclosure is to provide an optoelectronic device. The optoelectronic device comprises a heat dispersion substrate; an insulative protection layer on the heat dispersion substrate, wherein the insulative protection layer comprises AlInGaN series material; and an optoelectronic unit comprising an epitaxial structure comprising multiple layers on the insulative protection layer, wherein at least one layer of the epitaxial structure comprises III-V group material devoid of nitride.

A composite substrate configured for epitaxial growth of a semiconductor layer thereon is provided. The composite substrate includes multiple substrate layers formed of different materials having different thermal expansion coefficients. The thermal expansion coefficient of the material of the semiconductor layer can be between the thermal coefficients of the substrate layer materials. The composite substrate can have a composite thermal expansion coefficient configured to reduce an amount of tensile stress within the semiconductor layer at room temperature and/or an operating temperature for a device fabricated using the heterostructure.

In one embodiment, the disclosure relates to a system of stacked and connected layers of circuits that includes at least one pair of adjacent layers having very few physical (electrical) connections. The system includes multiple logical connections. The logical interconnections may be made with light transmission. A majority of physical connections may provide power. The physical interconnections may be sparse, periodic and regular. The exemplary system may include physical space (or gap) between the a pair of adjacent layers having few physical connections. The space may be generally set by the sizes of the connections. A constant flow of coolant (gaseous or liquid) may be maintained between the adjacent pair of layers in the space.