An optical output photodetector includes a substrate having a semiconductor surface and at least one optical photodetector element on the semiconductor surface. The optical photodetector element includes a plurality of integrated sensing regions which collectively provide a plurality of different absorbance spectra. The plurality of sensing regions includes a plurality of different semiconductor materials or a semiconductor material having a plurality of different dopants. The optical photodetector element can be configured as an array of optical photodetector elements and the dopants can be magnetic dopants.

A method of manufacturing an optical apparatus is provided. The method includes arranging a photo device above a substrate with an adhesive located between the photo device and the substrate, forming a bonding member that bonds the substrate and the photo device by curing the adhesive, and arranging, above the photo device, a transparent plate and a sealing member. The sealing member covers the photo device and is located between the transparent plate and the substrate. An elastic modulus of the bonding member is 1 GPa or less.

In some examples, techniques and architectures for fabricating an image sensor chip having a curved surface include placing a substrate on a first surface of an image sensor chip, wherein the first surface of the image sensor chip is opposite a second surface of the image sensor chip, and wherein the second surface of the image sensor chip includes light sensors to generate electrical signals in response to receiving light. Fabricating also includes modifying a volume of the substrate so as to impart forces on the image sensor chip to produce a curved image sensor chip.

An image sensor array including a carrier substrate; a first group of photodiodes coupled to the carrier substrate, where the first group of photodiodes include a first photodiode, and where the first photodiode includes a semiconductor layer configured to absorb photons at visible wavelengths and to generate photo-carriers from the absorbed photons; and a second group of photodiodes coupled to the carrier substrate, where the second group of photodiodes include a second photodiode, and where the second photodiode includes a germanium-silicon region fabricated on the semiconductor layer, the germanium-silicon region configured to absorb photons at infrared or near-infrared wavelengths and to generate photo-carriers from the absorbed photons.

An imaging device is provided, in which the dynamic range of still pictures can be suppressed from being decreased. In the imaging device, a photodiode including an n-type impurity region and a photodiode including an n-type impurity region are formed in a p-type well. An n-type impurity region is formed between the n-type impurity region on one side and that on the other side so as to contact each of the two. The impurity concentration of the last-formed n-type impurity region is set to be lower than those of the first-formed n-type impurity regions.

The present invention relates to a semiconductor device, a solid-state image sensor and a camera system capable of reducing the influence of noise at a connection between chips without a special circuit for communication and reducing the cost as a result. The semiconductor device includes: a first chip; and a second chip, wherein the first chip and the second chip are bonded to have a stacked structure, the first chip has a high-voltage transistor circuit mounted thereon, the second chip has mounted thereon a low-voltage transistor circuit having lower breakdown voltage than the high-voltage transistor circuit, and wiring between the first chip and the second chip is connected through a via formed in the first chip.

A semiconductor device has a first semiconductor die including an active region formed on a surface of the first semiconductor die. The active region of the first semiconductor die can include a sensor. An encapsulant is deposited over the first semiconductor die. A conductive layer is formed over the encapsulant and first semiconductor die. An insulating layer can be formed over the first semiconductor die. An opening is formed in the insulating layer over the active region. A transmissive layer is formed over the first semiconductor die including the active region. The transmissive layer includes an optical dielectric material or an optical transparent or translucent material. The active region is responsive to an external stimulus passing through the transmissive layer. A plurality of bumps is formed through the encapsulant and electrically connected to the conductive layer. A second semiconductor die is disposed adjacent to the first semiconductor die.

A method of manufacturing a solid state image sensor is provided. The method includes forming electrically conductive layer and an interlayer insulation film above a first region and a second region, performing an annealing process after forming the conductive layer and the interlayer insulation film, and forming a protective film above the interlayer insulation film and the electrically conductive layer. The electrically conductive layer includes a light shielding layer arranged above the second region. The interlayer insulation film includes a first portion located above the first region and a second portion located above the second region and below the light shielding layer. Before performing the annealing process, an average hydrogen concentration of the second portion is higher than an average hydrogen concentration of the first portion.

Disclosed is a method of fabricating a semiconductor image sensor device. The method includes providing a substrate having a pixel region, a periphery region, and a bonding pad region. The substrate further has a first side and a second side opposite the first side. The pixel region contains radiation-sensing regions. The method further includes forming a bonding pad in the bonding pad region; and forming light-blocking structures over the second side of the substrate, at least in the pixel region, after the bonding pad has been formed.

A backside illuminated image sensor includes a substrate, a backside passivation layer disposed on backside of the substrate, and a transparent conductive layer disposed on the backside passivation layer.