A Ge-on-Si photodetector constructed without doping or contacting Germanium by metal is described. Despite the simplified fabrication process, the device has responsivity of 1.24 A/W, corresponding to 99.2% quantum efficiency. Dark current is 40 nA at 4 V reverse bias. 3-dB bandwidth is 30 GHz.

A wafer-level method for fabricating a plurality of cameras includes modifying an image sensor wafer to reduce risk of the image sensor wafer warping, and bonding the image sensor wafer to a lens wafer to form a composite wafer that includes the plurality of cameras. A wafer-level method for fabricating a plurality of cameras includes bonding an image sensor wafer to a lens wafer, using a pressure sensitive adhesive, to form a composite wafer that includes the plurality of cameras.

Methods of forming an image sensor are provided. A method of forming an image sensor includes forming a trench in a substrate to define a unit pixel region of the substrate. The method includes forming an in-situ-doped passivation layer on an exposed surface of the trench. The method includes forming a capping pattern on the in-situ-doped passivation layer, in the trench. The method includes forming a photoelectric conversion region in the unit pixel region. Moreover, the method includes forming a floating diffusion region in the unit pixel region.

The present invention relates to a semiconductor device, a solid-state image sensor and a camera system capable of reducing the influence of noise at a connection between chips without a special circuit for communication and reducing the cost as a result. The semiconductor device includes: a first chip; and a second chip, wherein the first chip and the second chip are bonded to have a stacked structure, the first chip has a high-voltage transistor circuit mounted thereon, the second chip has mounted thereon a low-voltage transistor circuit having lower breakdown voltage than the high-voltage transistor circuit, and wiring between the first chip and the second chip is connected through a via formed in the first chip.

A method for manufacturing a BSI image sensor includes following steps: A substrate is provided. The substrate includes a front side and a back side opposite to the front side. The substrate further includes a plurality of isolation structures and a plurality of sensing elements formed therein. Next, the isolation structures are exposed from the back side of the substrate. Subsequently, a thermal treatment is performed to the back side of the substrate to form a plurality of cambered surfaces on the back side of the substrate. The cambered surfaces are formed correspondingly to the sensing elements, respectively.

A method of manufacturing an image senor includes: preparing a sensor substrate including: a sensor layer including a photosensitive cell; and a signal line layer including lines to receive electric signals from the photosensitive cell; forming a first material layer having a first refractive index on the sensor substrate; and forming a nanopattern layer on the first material layer, the nanopattern layer including a material having a second refractive index different from the first refractive index.

Disclosed embodiments include external gettering provided by electronic packaging. An external gettering element for a semiconductor substrate, which may be incorporated as part of an electronic packaging for the structure, is disclosed. Semiconductor structures and stacked semiconductor structures including an external gettering element are also disclosed. An encapsulation mold compound providing external gettering is also disclosed. Methods of fabricating such devices are also disclosed.

A method for producing an amorphous oxide thin film includes: a pre-treatment process of selectively changing a binding state of an organic component, at a temperature lower than a pyrolysis temperature of the organic component, in a first oxide precursor film containing the organic component and In, to obtain a second oxide precursor film in which, when an infrared wave number range of from 1380 cm.sup.1 to 1520 cm.sup.1 in an infrared absorption spectrum obtained by performing a measurement by Fourier transform infrared spectroscopy is divided into an infrared wave number range of from 1380 cm.sup.1 to 1450 cm.sup.1 and an infrared wave number range of from more than 1450 cm.sup.1 to 1520 cm.sup.1, a peak positioned within the infrared wave number range of from 1380 cm.sup.1 to 1450 cm.sup.1 exhibits the maximum value in the infrared absorption spectrum within an infrared wave number range of from 1350 cm.sup.1 to 1750 cm.sup.1; and a post-treatment process of removing the organic component remaining in the second oxide precursor film, to transform the second oxide precursor film into an amorphous oxide thin film containing In.

A sensor package that includes a substrate with opposing first and second surfaces. A plurality of photo detectors are formed on or under the first surface and configured to generate one or more signals in response to light incident on the first surface. A plurality of contact pads are formed at the first surface and are electrically coupled to the plurality of photo detectors. A plurality of holes are each formed into the second surface and extending through the substrate to one of the contact pads. Conductive leads each extend from one of the contact pads, through one of the plurality of holes, and along the second surface. The conductive leads are insulated from the substrate. One or more trenches are formed into a periphery portion of the substrate each extending from the second surface to the first surface. Insulation material covers sidewalls of the one or more trenches.

An image sensor includes a p-type silicon layer, a silicon layer disposed on the p-type silicon layer, a p-type SiGe layer disposed on the p-type silicon layer, a boron layer disposed on the p-type SiGe layer, and an anti-reflective coating disposed on the boron layer. A trench can be formed in the image sensor such that the boron layer is disposed in the trench.