A method for manufacturing solar cells is disclosed. The method includes forming an insulating material in a printable suspension along the at least one side edge of a solar cell, the insulating material in a printable suspension further adapted to form a protective film which reduces cracking near at least one side edge of the solar cell and improve structural integrity against mechanical stress. The protective film has an elastic modulus of at least 3 GPa, an elongation break point of at least 13 percent and a glass transition temperature of at least 250 degrees Celsius which provides additional structural support along the side edges, increasing the overall structural integrity, providing electrical insulation along the edges and improve the flexure strength of the solar cell.

A photovoltaic device includes a crystalline substrate having a first dopant conductivity, an interdigitated back contact and a front surface field structure. The front surface field structure includes a crystalline layer formed on the substrate and a noncrystalline layer formed on the crystalline layer. The crystalline layer and the noncrystalline layer are doped with dopants having a same dopant conductivity as the substrate. Methods are also disclosed.

A hybrid all-back-contact (ABC) solar cell and method of fabricating the same. The method comprises: forming one or more patterned insulating passivation layers over at least a portion of an absorber of the solar cell; forming one or more hetero junction layers over at least a portion of the one or more patterned insulating passivation layers to provide one or more heterojunction point or line-like contacts between the one or more heterojunction layers and the absorber of the solar cell; forming one or more first metal regions over at least a portion of the one or more heterojunction layers; forming a doped region within the absorber of the solar cell; and forming one or more second metal regions over at least a portion of the doped region and contacting the doped region to provide one or more homojunction contacts.

One embodiment of the present invention can provide a system for fabrication of a photovoltaic structure. The system can include a physical vapor deposition tool configured to sequentially deposit a transparent conductive oxide layer and a metallic layer on an emitter layer formed in a first surface of a Si substrate, without requiring the Si substrate to be removed from the physical vapor deposition tool after depositing the transparent conductive oxide layer. The system can further include an electroplating tool configured to plate a metallic grid on the metallic layer and a thermal annealing tool configured to anneal the transparent conductive oxide layer.

Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region.

A method for manufacturing a crystalline silicon-based solar cell having a photoelectric conversion section includes a silicon-based layer of an opposite conductivity-type on a first principal surface side of a crystalline silicon substrate of a first conductivity-type, and a collecting electrode formed by an electroplating method on a first principal surface of the photoelectric conversion section. By applying laser light from a first or second principal surface side of the photoelectric conversion section, an insulation-processed region his formed where a short-circuit between the first principal surface and a second principal surface of the photoelectric conversion section is eliminated. On the collecting electrode and/or the insulation-processed region, a protecting layer s formed for preventing diffusion of a metal contained in the collecting electrode into the substrate. After the protecting layer is formed, the insulation-processed region is heated to eliminate leakage between the substrate and the silicon-based layer.

Provided is a method for fabricating a nanopatterned surface. The method includes forming a mask on a substrate, patterning the substrate to include a plurality of symmetry-breaking surface corrugations, and removing the mask. The mask includes a pattern defined by mask material portions that cover first surface portions of the substrate and a plurality of mask space portions that expose second surface portions of the substrate, wherein the plurality of mask space portions are arranged in a lattice arrangement having a row and column, and the row is not oriented parallel to a [110] direction of the substrate. The patterning the substrate includes anisotropically removing portions of the substrate exposed by the plurality of spaces.

The solar cell (1) of the present invention is provided with an n-side electrode (14), a p-side electrode (15), and a photoelectric conversion unit (20) having a first main surface (20a) and a second main surface (20b). The first main surface (20a) includes an n-type surface (20an) and a p-type surface (20ap). The photoelectric conversion unit (20) has a semiconductor substrate (10) and a semiconductor layer (12n). The semiconductor substrate (10) has first and second main surfaces (10b, 10a). The semiconductor layer (12n) is arranged on a portion of the first main surface (10b). The semiconductor layer (12n) constitutes either the n-type surface (20an) or the p-type surface (20ap). The semiconductor layer (12n) includes a relatively thick portion (12n1) and a relative thin portion (12n2). The n-side electrode (14) or the p-side electrode (15) is arranged on at least the relatively thin portion (12n2) of the semiconductor layer (12n). The solar cell of the present invention, by means of the aforementioned configuration, is able to extend the lifetime of the minor carriers by means of the relatively thick portion (12n1), to maintain low resistance between the semiconductor substrate (10) and the n-side electrode (14) by means of the relatively thin portion (12n2), and to increase hole and electron collection efficiency.

Methods and apparatuses for manufacturing self-aligned integrated back contact heterojunction solar cells are provided. In some embodiments, systems for forming a solar cell on a substrate are provided, the systems comprising: a master shadow mask positioned adjacent to the substrate on a first side of the master shadow mask; a first blocking mask placed adjacent to a second side of the master shadow mask; and a deposition machine that deposits material on the substrate through holes in the master shadow mask and the first blocking mask.

This solar cell module is provided with: a solar cell; a first protection member that is arranged on the light-receiving surface side of the solar cell; a second protection member that is arranged on the back surface side of the solar cell; and an encapsulant that seals the solar cell. The encapsulant comprises an encapsulant that is arranged between the solar cell and the first protection member and an encapsulant that is arranged between the solar cell and the second protection member, and the encapsulant contains a wavelength conversion substance. This solar cell module satisfies the condition of formula.

EQE(.sub.2)(10.46n.sup.2.8)EQE(.sub.1) formula