The present disclosure provides a semiconductor device including: a first semiconductor layer including a first region and a second region adjacent to the first region; a first insulator layer provided above the first semiconductor layer; an intermediate semiconductor layer, having an n-type conduction, provided above the first region of the first semiconductor layer and above the first insulator layer; a second insulator layer provided above the intermediate semiconductor layer; a second semiconductor layer provided above the first region of the first semiconductor layer and above the second insulator layer; a sensor formed in the second region of the first semiconductor layer; a contact electrode connected to the intermediate semiconductor layer; and a circuit element formed in the second semiconductor layer.

Various approaches are discussed for using four-side buttable CMOS tiles to fabricate detector panels, including large-area detector panels. Fabrication may utilize pads and interconnect structures formed on the top or bottom of the CMOS tiles. Electrical connection and readout may utilize readout and digitization circuitry provided on the CMOS tiles themselves such that readout of groups or sub-arrays of pixels occurs at the tile level, while tiles are then readout at the detector level such that readout operations are tiered or multi-level.

Various approaches are discussed for using four-side buttable CMOS tiles to fabricate detector panels, including large-area detector panels. Fabrication may utilize pads and interconnect structures formed on the top or bottom of the CMOS tiles. Electrical connection and readout may utilize readout and digitization circuitry provided on the CMOS tiles themselves such that readout of groups or sub-arrays of pixels occurs at the tile level, while tiles are then readout at the detector level such that readout operations are tiered or multi-level.

The present disclosure relates to an array substrate for an X-ray detector and an X-ray detector including the same. The array substrate is defined as an active area and a pad area, wherein the pad area includes a substrate including a first area and a second area extending from the first area, and a plurality of data lines contacting an upper surface of the substrate and extending toward the second area from the first area, adjacent data lines of the plurality of data lines are spaced apart from each other, the upper surface of the substrate is exposed in a area between the adjacent data lines in the first area of the substrate, and a first insulation film is disposed between the substrate and the data lines in the second area of the substrate, thereby preventing a short-circuit between adjacent data lines due to agglomeration between data lines and an organic layer during cutting.

With an image sensor in which the amplifier circuit is disposed at each pixel, there is such an issue that the threshold voltage of the transistor fluctuates so that the signal voltage fluctuates because a voltage is continuously applied between the source and the gate of the transistor at all times when using the amorphous thin film semiconductor as the transistor that constitutes an amplifier circuit. The gate-source potential of the TFT that constitutes the amplifier circuit is controlled so that the gate terminal voltage becomes smaller than the source terminal voltage in an integrating period where the pixels accumulate the signals, and controlled so that the gate terminal voltage becomes larger than the source terminal voltage in a readout period where the pixels output the signals.

A TFT and manufacturing method thereof, an array substrate and manufacturing method thereof, an X-ray detector and a display device are disclosed. The manufacturing method includes: forming a gate-insulating-layer thin film (3), a semiconductor-layer thin film (4) and a passivation-shielding-layer thin film (5) successively; forming a pattern (5) that includes a passivation shielding layer through one patterning process, so that a portion, sheltered by the passivation shielding layer, of the semiconductor-layer thin film forms a pattern of an active layer (4a); and performing an ion doping process to a portion, not sheltered by the passivation shielding layer, of the semiconductor-layer thin film to form a pattern comprising a source electrode (4c) and a drain electrode (4b). The source electrode (4c) and the drain electrode (4b) are disposed on two sides of the active layer (4a) respectively and in a same layer as the active layer (4a). The manufacturing method can reduce the number of patterning processes and improve the performance of the thin film transistor in the array substrate.

The present invention provides an X-ray detection device and an apparatus and method for calibrating an X-ray detector, the method for calibrating an X-ray detector comprising: retrieving a calibration parameter stored in the X-ray detector relative to the X-ray detector; and calibrating the X-ray detector according to the calibration parameter.

An imaging system detector array (112) includes a detector tile (116). The detector tile includes a photosensor array (202), including a plurality of photosensor pixels (204). The detector tile further includes a scintillator array (212) optically coupled to the photosensor array. The detector tile further includes an electronics layer or ASIC on a substrate (214) that is electrically coupled to the photosensor array. The electronics layer includes a plurality of individual and divisible processing regions (302). Each processing region including a predetermined number of channels corresponding to a sub-set of the plurality of photosensor pixels. The processing regions are in electrical communication with each other. Each processing region includes its own electrical reference and bias circuitry (802, 804).

The present invention is a photodiode or photodiode array having improved ruggedness for a shallow junction photodiode which is typically used in the detection of short wavelengths of light. In one embodiment, the photodiode has a relatively deep, lightly-doped P zone underneath a P+ layer. By moving the shallow junction to a deeper junction in a range of 2-5 m below the photodiode surface, the improved device has improved ruggedness, is less prone to degradation, and has an improved linear current.

A method of manufacturing an image sensor device includes providing a substrate; forming a buffer layer on the substrate; forming a metal oxide channel on the buffer layer; forming a gate oxide layer on the buffer layer and the metal oxide channel; forming a gate metal layer on the gate oxide layer; forming a photodiode stack on the gate metal layer; patterning the gate oxide layer and the gate metal layer to form a first portion under the photodiode stack, and a second portion comprising a transistor; forming an interlayer dielectric layer over at least the photodiode stack and the transistor; forming a plurality of vias in the interlayer dielectric layer; and metalizing the vias to form contacts to the image sensor device.