An electronic device mounting substrate includes: a first wiring substrate shaped in a rectangular frame, an interior of the rectangular frame constituting a first through hole; a second wiring substrate shaped in a rectangular frame or plate, the second wiring substrate being disposed so as to overlie a lower surface of the first wiring substrate and be electrically connected to the first wiring substrate; a metallic plate disposed so as to overlie a lower surface of the second wiring substrate so that the second wiring substrate is sandwiched between the metallic plate and the first wiring substrate; and a lens holder secured to an outer periphery of the metallic plate. A frame interior of the first wiring substrate, or a frame interior of each of the first wiring substrate and the second wiring substrate, constitutes an electronic device mounting space.

An integrated optical sensor module includes an optical sensor die having an optical sensing area on its first surface, and an application-specific integrated circuit (ASIC) die arranged over the first surface of the optical sensor die. A hole in the ASIC die is at least partially aligned with the optical sensing area such that at least some of the light passing through the hole may contact the optical sensing area. The hole through the ASIC die can be configured to receive an optical fiber, lens structure, or other optical element therein.

A photon counting detector is provided for electrometric waves having a wide wavelength range, such as X-rays, gamma rays, and excited weak fluorescence, by use of a common detecting structure. The detector includes an optical connecting part opposed to an emission surface of a columnar-body array and can adjust a spreading range of light emitted from an emission end face of each of a plurality of columnar bodies. The detector also includes a group of APD (avalanche photodiode) clusters opposed to the emission surface via the optical connecting part. In the group of APD clusters, NN (N is a positive integer of 2 or more) APDs each having a light receiving face are arranged two-dimensionally and the output signals from the NN APDs are combined by a wired logical addition circuit so as to form an APD cluster serving as one pixel. A plurality of such clusters are arranged two-dimensionally.

A component intended for the detecting and/or the measuring of an electromagnetic radiation in a first range of wavelengths. The component includes a support including at least one first structure and a reception face in order to receive the electromagnetic radiation; an optical filter of the band-pass type in the first range of wavelengths arranged on the reception face of the support. The optical filter includes an adaptation zone covering the reception face of the support and with a refractive index less than 2; a first metal layer covering the adaptation zone and including regularly distributed through-holes. Each one of the through-holes contains a filling material.

Fabricating an optics wafer includes providing a wafer comprising a core region composed of a glass-reinforced epoxy, the wafer further comprising a first resin layer on a top surface of the core region and a second resin layer on a bottom surface of the core region. The core region and first and second resin layers are substantially non-transparent for a specific range of the electromagnetic spectrum. The wafer further includes vertical transparent regions that extend through the core region and the first and second resin layers and are composed of a material that is substantially transparent for the specific range of the electromagnetic spectrum. The wafer is thinned, for example by polishing, from its top surface and its bottom surface so that a resulting thickness is within a predetermined range without causing glass fibers of the core region to become exposed. Respective optical structures are provided on one or more exposed surfaces of at least some of the transparent regions.

Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as holes, effectively increase the absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more. Their thickness dimensions allow them to be conveniently integrated on the same Si chip with CMOS, BiCMOS, and other electronics, with resulting packaging benefits and reduced capacitance and thus higher speeds.

A semiconductor substrate, an insulating layer made of silicon oxide formed on the semiconductor substrate and a semiconductor layer made of silicon formed on the insulating layer are provided, and the semiconductor layer constitutes an optical waveguide in an optical signal transmission line section and an optical modulator in an optical modulation section. Also, the insulating layer is removed except for a part thereof to have a hollow structure with a cavity, and both side surfaces and a lower surface of each of the semiconductor layers constituting the optical waveguide and the optical modulator are exposed and covered with air.

The present disclosure relates to an optical sensor module, an optical sensing accessory, and an optical sensing device. An optical sensor module comprises a light source, a photodetector, and a substrate. The light source is configured to convert electric power into radiant energy and emit light to an object surface. The photodetector is configured to receive the light from an object surface and convert radiant energy into electrical current or voltage. An optical sensing accessory and an optical sensing device comprise the optical sensor module and other electronic modules to have further applications.

The following configuration is adopted in order to provide a highly reliable optival sensor device which enhances the reliability of devices without making the devices unsuitable for size and thickness reductions. The light sensor comprises an element-mounting portion (3) having a cavity and a lid member closely attached thereinto, the lid member being composed of: a window (2) constituted of a phosphate-based glass to which properties approximate to a spectral luminous efficacy properties have been imparted by compositional control; and a frame (1) constituted of a phosphate-based glass having light-shielding properties. The lid member is a Laminated glass member obtained by cutting the phosphate-based glass having the spectral luminous efficacy properties into individual pieces, fitting the glass piece into the opening of the phosphate-based glass (1) having light-shielding properties, the opening having been formed so as to have a size approximately equal to the cavity size, and melting and integrating the glasses member.

A thermophotovoltaic (TPV) converter includes spectrally-selective metamaterial emitters disposed on peripheral walls of an all-metal box-like enclosure, and associated photovoltaic (PV) cells configured to efficiently convert in-band photons having optimal conversion spectrums into electricity. The peripheral walls surround a substantially rectangular interior cavity having an inlet opening through which heat energy (e.g., concentrated sunlight) is supplied, and an outlet opening through which waste heat exits the cavity. Concentrated sunlight passing through the box-like enclosure heats the peripheral walls to a high temperature (i.e., above 1000 K), causing thermally excited surface plasmons generated on the emitters' concentric circular ridges to produce highly-directional radiant energy beams having a peak emission wavelength roughly equal to a fixed grating period separating the ridges. The metamaterial emitter is optionally provided with multiple bull's eye structures in a multiplexed (overlapping) pattern and with different grating periods to produce a broad emission spectrum overlapping the optimal conversion spectrum.